ZA921455B - Radiation-sensitive polymers containing naphthoquinone-2-diazide-4-sulfonyl groups and their use in a positive working recording material - Google Patents

Radiation-sensitive polymers containing naphthoquinone-2-diazide-4-sulfonyl groups and their use in a positive working recording material

Info

Publication number
ZA921455B
ZA921455B ZA921455A ZA921455A ZA921455B ZA 921455 B ZA921455 B ZA 921455B ZA 921455 A ZA921455 A ZA 921455A ZA 921455 A ZA921455 A ZA 921455A ZA 921455 B ZA921455 B ZA 921455B
Authority
ZA
South Africa
Prior art keywords
diazide
radiation
recording material
polymers containing
sulfonyl groups
Prior art date
Application number
ZA921455A
Other languages
English (en)
Inventor
Horst Roeschert
Roeschert Horst
Georg Pawlowski
Pawlowski Georg
Ralph Dammel
Dammel Ralph
Hans-Joachim Merrem
Merrem Hans-Joachim
Juergen Fuchs
Fuchs Juergen
Original Assignee
Hoechst Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoechst Ag filed Critical Hoechst Ag
Publication of ZA921455B publication Critical patent/ZA921455B/xx

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/04—Chromates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
ZA921455A 1991-02-28 1992-02-27 Radiation-sensitive polymers containing naphthoquinone-2-diazide-4-sulfonyl groups and their use in a positive working recording material ZA921455B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4106356A DE4106356A1 (de) 1991-02-28 1991-02-28 Strahlungsempfindliche polymere mit naphthochinon-2-diazid-4-sulfonyl-gruppen und deren verwendung in einem positiv arbeitenden aufzeichnungsmaterial

Publications (1)

Publication Number Publication Date
ZA921455B true ZA921455B (en) 1992-11-25

Family

ID=6426127

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA921455A ZA921455B (en) 1991-02-28 1992-02-27 Radiation-sensitive polymers containing naphthoquinone-2-diazide-4-sulfonyl groups and their use in a positive working recording material

Country Status (9)

Country Link
US (1) US5302488A (xx)
EP (1) EP0501308B1 (xx)
JP (1) JPH05155942A (xx)
KR (1) KR920016900A (xx)
AU (1) AU1125392A (xx)
BR (1) BR9200680A (xx)
CA (1) CA2061847A1 (xx)
DE (2) DE4106356A1 (xx)
ZA (1) ZA921455B (xx)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06204162A (ja) * 1992-12-28 1994-07-22 Mitsubishi Electric Corp 半導体装置の製造方法および該方法に用いられるレジスト組成物
JPH07140666A (ja) * 1993-06-04 1995-06-02 Internatl Business Mach Corp <Ibm> マイクロリトグラフィックレジスト組成物、酸不安定化合物、マイクロリトグラフィックレリーフ画像形成方法及び酸感知性ポリマー組成物
EP1117714B1 (en) * 1998-07-23 2002-11-27 Clariant Finance (BVI) Limited Water soluble positive-working photoresist composition
KR100363695B1 (ko) * 1998-12-31 2003-04-11 주식회사 하이닉스반도체 유기난반사방지중합체및그의제조방법
US7005227B2 (en) * 2004-01-21 2006-02-28 Intel Corporation One component EUV photoresist
KR20110059471A (ko) * 2009-11-27 2011-06-02 삼성전자주식회사 포토레지스트 조성물, 이를 이용한 패턴의 형성방법 및 반도체 장치의 제조방법
KR20120066924A (ko) * 2010-12-15 2012-06-25 제일모직주식회사 오르토-니트로벤질 에스테르 화합물 및 이를 포함하는 포지티브형 감광성 수지 조성물

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3837860A (en) * 1969-06-16 1974-09-24 L Roos PHOTOSENSITIVE MATERIALS COMPRISING POLYMERS HAVING RECURRING PENDENT o-QUINONE DIAZIDE GROUPS
US3779778A (en) * 1972-02-09 1973-12-18 Minnesota Mining & Mfg Photosolubilizable compositions and elements
JPS5024641B2 (xx) * 1972-10-17 1975-08-18
JPS5236043B2 (xx) * 1974-02-21 1977-09-13
US4139384A (en) * 1974-02-21 1979-02-13 Fuji Photo Film Co., Ltd. Photosensitive polymeric o-quinone diazide containing lithographic printing plate and process of using the plate
GB1494640A (en) * 1974-12-24 1977-12-07 Fuji Photo Film Co Ltd Image-forming on light-sensitive element containing a quinone diazide
DE3009873A1 (de) * 1979-03-16 1980-09-25 Daicel Chem Photoempfindliche masse
JPS6053301B2 (ja) * 1979-08-31 1985-11-25 冨士薬品工業株式会社 ポジ型感光性組成物
DE3028308A1 (de) * 1980-07-25 1982-02-25 Siemens AG, 1000 Berlin und 8000 München Verfahren zum erzeugen von reliefstrukturen aus strahlungsempfindlichen lacken auf einem substrat, insbesondere fuer die herstellung von integrierten halbleiterschaltungen
DE3246106A1 (de) * 1982-12-13 1984-06-14 Hoechst Ag, 6230 Frankfurt Lichtempfindliches gemisch, daraus hergestelltes lichtempfindliches kopiermaterial und verfahren zur herstellung einer druckform aus dem kopiermaterial
CA1321315C (en) * 1986-04-11 1993-08-17 Yoichi Mori Printing plate
US4910123A (en) * 1986-12-25 1990-03-20 Matsushita Electric Industrial Co., Ltd. Pattern forming method
JPS6444934A (en) * 1987-08-14 1989-02-17 Japan Synthetic Rubber Co Ltd Radiation sensitive resin composition
DE3731439A1 (de) * 1987-09-18 1989-03-30 Hoechst Ag Strahlungsempfindliches gemisch und hieraus hergestelltes kopiermaterial
JPH01106037A (ja) * 1987-10-20 1989-04-24 Matsushita Electric Ind Co Ltd パターン形成材料
US5178986A (en) * 1988-10-17 1993-01-12 Shipley Company Inc. Positive photoresist composition with naphthoquinonediazidesulfonate of oligomeric phenol
DE3930087A1 (de) * 1989-09-09 1991-03-14 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
JP2661317B2 (ja) * 1990-03-27 1997-10-08 松下電器産業株式会社 パターン形成方法

Also Published As

Publication number Publication date
CA2061847A1 (en) 1992-08-29
JPH05155942A (ja) 1993-06-22
AU1125392A (en) 1992-09-03
DE59207077D1 (de) 1996-10-17
EP0501308B1 (de) 1996-09-11
BR9200680A (pt) 1992-11-10
US5302488A (en) 1994-04-12
KR920016900A (ko) 1992-09-25
DE4106356A1 (de) 1992-09-03
EP0501308A1 (de) 1992-09-02

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