BR9106499A - Processo para a producao de cristais simples nao aglomerados de netreto de aluminio - Google Patents

Processo para a producao de cristais simples nao aglomerados de netreto de aluminio

Info

Publication number
BR9106499A
BR9106499A BR919106499A BR9106499A BR9106499A BR 9106499 A BR9106499 A BR 9106499A BR 919106499 A BR919106499 A BR 919106499A BR 9106499 A BR9106499 A BR 9106499A BR 9106499 A BR9106499 A BR 9106499A
Authority
BR
Brazil
Prior art keywords
netret
agglomerated
aluminum
production
simple crystals
Prior art date
Application number
BR919106499A
Other languages
English (en)
Inventor
Sadashiv Kashinath Nadkarni
Luc Parent
Original Assignee
Alcan Int Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcan Int Ltd filed Critical Alcan Int Ltd
Publication of BR9106499A publication Critical patent/BR9106499A/pt

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/0047—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents
    • C22C32/0068—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/268—Monolayer with structurally defined element

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Products (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
BR919106499A 1990-05-25 1991-05-22 Processo para a producao de cristais simples nao aglomerados de netreto de aluminio BR9106499A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/528,878 US5096860A (en) 1990-05-25 1990-05-25 Process for producing unagglomerated single crystals of aluminum nitride
PCT/CA1991/000170 WO1991019027A1 (en) 1990-05-25 1991-05-22 Process for producing unagglomerated single crystals of aluminum nitride

Publications (1)

Publication Number Publication Date
BR9106499A true BR9106499A (pt) 1993-05-25

Family

ID=24107575

Family Applications (1)

Application Number Title Priority Date Filing Date
BR919106499A BR9106499A (pt) 1990-05-25 1991-05-22 Processo para a producao de cristais simples nao aglomerados de netreto de aluminio

Country Status (7)

Country Link
US (1) US5096860A (pt)
EP (1) EP0531348A1 (pt)
JP (1) JPH05507056A (pt)
AU (1) AU7875591A (pt)
BR (1) BR9106499A (pt)
CA (1) CA2083708A1 (pt)
WO (1) WO1991019027A1 (pt)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5190738A (en) * 1991-06-17 1993-03-02 Alcan International Limited Process for producing unagglomerated single crystals of aluminum nitride
US5246683A (en) * 1991-07-03 1993-09-21 Alcan Internatonal Limited Process for producing small particles of aluminum nitride and particles so-produced
FR2715169B1 (fr) * 1994-01-14 1996-04-05 Atochem Elf Sa Macrocristaux renfermant du nitrure d'aluminium sous forme de plaquettes, leur procédé de préparation et leurs utilisations.
US5858086A (en) * 1996-10-17 1999-01-12 Hunter; Charles Eric Growth of bulk single crystals of aluminum nitride
JP3991098B2 (ja) * 2000-10-23 2007-10-17 独立行政法人産業技術総合研究所 火炎で合成した窒化アルミニウム製フィラー粉体
PL219109B1 (pl) * 2001-06-06 2015-03-31 Ammono Spółka Z Ograniczoną Odpowiedzialnością Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal oraz urządzenie do otrzymywania objętościowego monokrystalicznego azotku zawierającego gal
PL207400B1 (pl) * 2001-06-06 2010-12-31 Ammono Społka Z Ograniczoną Odpowiedzialnością Sposób i urządzenie do otrzymywania objętościowego monokryształu azotku zawierającego gal
WO2003043150A1 (fr) * 2001-10-26 2003-05-22 Ammono Sp.Zo.O. Structure d'element electoluminescent a couche monocristalline non epitaxiee de nitrure
WO2003098757A1 (fr) 2002-05-17 2003-11-27 Ammono Sp.Zo.O. Structure d'element electroluminescent comprenant une couche de monocristaux de nitrure en vrac
EP1514958B1 (en) * 2002-05-17 2014-05-14 Ammono S.A. Apparatus for obtaining a bulk single crystal using supercritical ammonia
US20060138431A1 (en) * 2002-05-17 2006-06-29 Robert Dwilinski Light emitting device structure having nitride bulk single crystal layer
TWI352434B (en) * 2002-12-11 2011-11-11 Ammono Sp Zoo A substrate for epitaxy and a method of preparing
EP1590509B1 (en) * 2002-12-11 2014-02-12 Ammono S.A. Process for obtaining bulk monocrystalline gallium-containing nitride
PL1769105T3 (pl) * 2004-06-11 2014-11-28 Ammono S A Objętościowy monokrystaliczny azotek galu oraz sposób jego wytwarzania
PL371405A1 (pl) * 2004-11-26 2006-05-29 Ammono Sp.Z O.O. Sposób wytwarzania objętościowych monokryształów metodą wzrostu na zarodku
TWI684680B (zh) * 2013-09-04 2020-02-11 奈瑞德解決方案公司 體擴散長晶法
JP6394170B2 (ja) * 2014-08-12 2018-09-26 Tdk株式会社 アルミナ基板
CN115710748B (zh) * 2021-08-23 2024-10-01 中国科学院福建物质结构研究所 一种碳酸锌氨非线性光学晶体及其制备方法和应用

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1175273A (fr) * 1957-05-16 1959-03-23 Pechiney Four pour la production continue de nitrure d'aluminium
US3598526A (en) * 1967-04-27 1971-08-10 Dow Chemical Co Method for preparing monocrystalline aluminum nitride
US3607014A (en) * 1968-12-09 1971-09-21 Dow Chemical Co Method for preparing aluminum nitride and metal fluoride single crystals
JPS57181356A (en) * 1981-04-30 1982-11-08 Hitachi Ltd Sintered aluminum nitride body with high heat conductivity
US4481300A (en) * 1981-08-31 1984-11-06 Raytheon Company Aluminum oxynitride having improved optical characteristics and method of manufacture
DE3333406A1 (de) * 1982-09-17 1984-03-22 Tokuyama Soda K.K., Tokuyama, Yamaguchi Feines aluminiumnitridpulver, verfahren zu seiner herstellung und es enthaltendes mittel
JPS60151280A (ja) * 1984-01-19 1985-08-09 日本電気株式会社 窒化アルミニウム焼結体の製造方法
EP0176737B1 (en) * 1984-09-28 1989-08-09 Kabushiki Kaisha Toshiba Process for production of readily sinterable aluminum nitride powder
JPS62132711A (ja) * 1985-12-02 1987-06-16 Sumitomo Chem Co Ltd 窒化アルミニウム質粉末の製造法
DE3608326A1 (de) * 1986-03-13 1987-09-17 Kempten Elektroschmelz Gmbh Praktisch porenfreie formkoerper aus polykristallinem aluminiumnitrid und verfahren zu ihrer herstellung ohne mitverwendung von sinterhilfsmitteln
US4806330A (en) * 1986-03-24 1989-02-21 Battelle Memorial Institute Process for preparing high purity aluminum nitride
JPS6355108A (ja) * 1986-08-22 1988-03-09 Asahi Chem Ind Co Ltd 窒化アルミニウム粉末およびその製造方法
IL83959A (en) * 1986-10-15 1991-06-30 Stemcor Corp Continuous production of high-purity,ultra-fine aluminum nitride powder by the carbo-nitridization of alumina
DE3871013D1 (de) * 1987-07-29 1992-06-17 Mitsui Toatsu Chemicals Verfahren zur gewinnung von aluminiumnitrid und daraus hergestelltes sinterprodukt.
JPH01133983A (ja) * 1987-11-18 1989-05-26 Showa Denko Kk 窒化アルミニウム焼結体の製造方法

Also Published As

Publication number Publication date
CA2083708A1 (en) 1991-11-26
JPH05507056A (ja) 1993-10-14
WO1991019027A1 (en) 1991-12-12
AU7875591A (en) 1991-12-31
US5096860A (en) 1992-03-17
EP0531348A1 (en) 1993-03-17

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