BR8702442A - Processo de gravacao em vala profunda de silicio de cristal unico - Google Patents

Processo de gravacao em vala profunda de silicio de cristal unico

Info

Publication number
BR8702442A
BR8702442A BR8702442A BR8702442A BR8702442A BR 8702442 A BR8702442 A BR 8702442A BR 8702442 A BR8702442 A BR 8702442A BR 8702442 A BR8702442 A BR 8702442A BR 8702442 A BR8702442 A BR 8702442A
Authority
BR
Brazil
Prior art keywords
silicio
engraving
single crystal
deep dye
dye
Prior art date
Application number
BR8702442A
Other languages
English (en)
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Publication of BR8702442A publication Critical patent/BR8702442A/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/14—Treatment of the complete device, e.g. by electroforming to form a barrier
    • H01L21/145—Ageing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Gerontology & Geriatric Medicine (AREA)
  • Drying Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • ing And Chemical Polishing (AREA)
  • Element Separation (AREA)
BR8702442A 1986-05-16 1987-05-13 Processo de gravacao em vala profunda de silicio de cristal unico BR8702442A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US86417786A 1986-05-16 1986-05-16

Publications (1)

Publication Number Publication Date
BR8702442A true BR8702442A (pt) 1988-02-23

Family

ID=25342688

Family Applications (1)

Application Number Title Priority Date Filing Date
BR8702442A BR8702442A (pt) 1986-05-16 1987-05-13 Processo de gravacao em vala profunda de silicio de cristal unico

Country Status (5)

Country Link
EP (1) EP0246514A3 (pt)
JP (1) JPS6333586A (pt)
KR (1) KR900003804B1 (pt)
BR (1) BR8702442A (pt)
ZA (1) ZA873465B (pt)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3752259T2 (de) * 1986-12-19 1999-10-14 Applied Materials Bromine-Ätzverfahren für Silizium
JP3371143B2 (ja) * 1991-06-03 2003-01-27 ソニー株式会社 ドライエッチング方法
DE4317623C2 (de) * 1993-05-27 2003-08-21 Bosch Gmbh Robert Verfahren und Vorrichtung zum anisotropen Plasmaätzen von Substraten und dessen Verwendung
GB9616225D0 (en) 1996-08-01 1996-09-11 Surface Tech Sys Ltd Method of surface treatment of semiconductor substrates
ATE251341T1 (de) * 1996-08-01 2003-10-15 Surface Technology Systems Plc Verfahren zur ätzung von substraten
US6187685B1 (en) 1997-08-01 2001-02-13 Surface Technology Systems Limited Method and apparatus for etching a substrate
US6051346A (en) * 1998-04-29 2000-04-18 Lucent Technologies Inc. Process for fabricating a lithographic mask
US6417013B1 (en) 1999-01-29 2002-07-09 Plasma-Therm, Inc. Morphed processing of semiconductor devices
US8614151B2 (en) * 2008-01-04 2013-12-24 Micron Technology, Inc. Method of etching a high aspect ratio contact
JP5064319B2 (ja) * 2008-07-04 2012-10-31 東京エレクトロン株式会社 プラズマエッチング方法、制御プログラム及びコンピュータ記憶媒体
CN102324387A (zh) * 2011-09-28 2012-01-18 上海宏力半导体制造有限公司 深沟槽的形成方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4226665A (en) * 1978-07-31 1980-10-07 Bell Telephone Laboratories, Incorporated Device fabrication by plasma etching
US4475982A (en) * 1983-12-12 1984-10-09 International Business Machines Corporation Deep trench etching process using CCl2 F2 /Ar and CCl2 F.sub. /O2 RIE
CA1260365A (en) * 1985-05-06 1989-09-26 Lee Chen Anisotropic silicon etching in fluorinated plasma

Also Published As

Publication number Publication date
JPS6356312B2 (pt) 1988-11-08
ZA873465B (en) 1989-01-25
JPS6333586A (ja) 1988-02-13
KR900003804B1 (ko) 1990-05-31
EP0246514A2 (en) 1987-11-25
KR870011672A (ko) 1987-12-26
EP0246514A3 (en) 1989-09-20

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