BR8007248A - Tiristor e processo para a operacao do mesmo - Google Patents
Tiristor e processo para a operacao do mesmoInfo
- Publication number
- BR8007248A BR8007248A BR8007248A BR8007248A BR8007248A BR 8007248 A BR8007248 A BR 8007248A BR 8007248 A BR8007248 A BR 8007248A BR 8007248 A BR8007248 A BR 8007248A BR 8007248 A BR8007248 A BR 8007248A
- Authority
- BR
- Brazil
- Prior art keywords
- thyristor
- same operation
- same
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/742—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a field effect transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
- H01L29/745—Gate-turn-off devices with turn-off by field effect
- H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19792945324 DE2945324A1 (de) | 1979-11-09 | 1979-11-09 | Thyristor mit verbessertem schaltverhalten |
Publications (1)
Publication Number | Publication Date |
---|---|
BR8007248A true BR8007248A (pt) | 1981-05-19 |
Family
ID=6085606
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR8007248A BR8007248A (pt) | 1979-11-09 | 1980-11-07 | Tiristor e processo para a operacao do mesmo |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0028797B1 (pt) |
JP (1) | JPS609669B2 (pt) |
BR (1) | BR8007248A (pt) |
CA (1) | CA1145060A (pt) |
DE (1) | DE2945324A1 (pt) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3018468A1 (de) * | 1980-05-14 | 1981-11-19 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit steuerbaren emitterkurzschluessen und verfahren zu seinem betrieb |
DE3118347A1 (de) * | 1981-05-08 | 1982-11-25 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit gategesteuerten mis-fet-strukturen des verarmungstyps und verfahren zu seinem betrieb |
DE3118305A1 (de) * | 1981-05-08 | 1982-12-02 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit verbessertem schaltverhalten sowie verfahren zu seinem betrieb |
DE3118365A1 (de) * | 1981-05-08 | 1982-11-25 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit in den emitter eingefuegten steuerbaren emitter-kurzschlusspfaden |
DE3118293A1 (de) * | 1981-05-08 | 1982-12-02 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit verbessertem schaltverhalten und verfahren zu seinem betrieb |
DE3138762A1 (de) * | 1981-09-29 | 1983-04-14 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit steuerbaren emitter-kurzschluessen und zuendverstaerkung |
IE56341B1 (en) * | 1981-12-16 | 1991-07-03 | Gen Electric | Multicellular thyristor |
CA1201214A (en) * | 1982-02-03 | 1986-02-25 | General Electric Company | Semiconductor device having turn-on and turn-off capabilities |
US5014102A (en) * | 1982-04-01 | 1991-05-07 | General Electric Company | MOSFET-gated bipolar transistors and thyristors with both turn-on and turn-off capability having single-polarity gate input signal |
DE3230760A1 (de) * | 1982-08-18 | 1984-02-23 | Siemens AG, 1000 Berlin und 8000 München | Abschaltbarer thyristor |
JPS5961962A (ja) * | 1982-09-30 | 1984-04-09 | Matsushita Electric Works Ltd | 絶縁ゲ−ト型サイリスタ |
DE3370248D1 (en) * | 1982-10-04 | 1987-04-16 | Gen Electric | Thyristor with turn-off capability |
EP0106147A1 (en) * | 1982-10-04 | 1984-04-25 | General Electric Company | Thyristor with turn-off capability |
DE3379302D1 (en) * | 1982-12-13 | 1989-04-06 | Gen Electric | Lateral insulated-gate rectifier structures |
DE3447220A1 (de) * | 1983-12-30 | 1985-07-11 | General Electric Co., Schenectady, N.Y. | Thyristor mit abschaltvermoegen mit verbessertem emitter-bereich und verfahren zu seiner herstellung |
JPS6188563A (ja) * | 1984-10-08 | 1986-05-06 | Toshiba Corp | 半導体スイツチ |
JPS624368A (ja) * | 1985-06-28 | 1987-01-10 | シ−メンス、アクチエンゲゼルシヤフト | サイリスタ |
US4760432A (en) * | 1985-11-04 | 1988-07-26 | Siemens Aktiengesellschaft | Thyristor having controllable emitter-base shorts |
US4717940A (en) * | 1986-03-11 | 1988-01-05 | Kabushiki Kaisha Toshiba | MIS controlled gate turn-off thyristor |
CH670528A5 (pt) * | 1986-03-20 | 1989-06-15 | Bbc Brown Boveri & Cie | |
GB2190539A (en) * | 1986-05-16 | 1987-11-18 | Philips Electronic Associated | Semiconductor devices |
US4821083A (en) * | 1986-09-30 | 1989-04-11 | Kabushiki Kaisha Toshiba | Thyristor drive system |
US5132767A (en) * | 1986-09-30 | 1992-07-21 | Kabushiki Kaisha Toshiba | Double gate GTO thyristor |
JPH0821713B2 (ja) * | 1987-02-26 | 1996-03-04 | 株式会社東芝 | 導電変調型mosfet |
TW399774U (en) * | 1989-07-03 | 2000-07-21 | Gen Electric | FET, IGBT and MCT structures to enhance operating characteristics |
JP2501236B2 (ja) * | 1989-07-26 | 1996-05-29 | 日産自動車株式会社 | タ―ンオフゲ―ト付きサイリスタ |
DE59107127D1 (de) * | 1991-04-11 | 1996-02-01 | Asea Brown Boveri | Abschaltbares, MOS-gesteuertes Leistungshalbleiter-Bauelement |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL293292A (pt) * | 1962-06-11 | |||
SE392783B (sv) * | 1975-06-19 | 1977-04-18 | Asea Ab | Halvledaranordning innefattande en tyristor och en felteffekttransistordel |
-
1979
- 1979-11-09 DE DE19792945324 patent/DE2945324A1/de active Granted
-
1980
- 1980-11-04 EP EP19800106775 patent/EP0028797B1/de not_active Expired
- 1980-11-07 BR BR8007248A patent/BR8007248A/pt unknown
- 1980-11-07 CA CA000364265A patent/CA1145060A/en not_active Expired
- 1980-11-10 JP JP15806380A patent/JPS609669B2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
CA1145060A (en) | 1983-04-19 |
EP0028797A3 (en) | 1981-06-03 |
JPS609669B2 (ja) | 1985-03-12 |
DE2945324A1 (de) | 1981-05-21 |
JPS5683067A (en) | 1981-07-07 |
EP0028797A2 (de) | 1981-05-20 |
EP0028797B1 (de) | 1983-02-16 |
DE2945324C2 (pt) | 1990-05-31 |
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