BR8007254A - Tiristor e processo para a operacao do mesmo - Google Patents

Tiristor e processo para a operacao do mesmo

Info

Publication number
BR8007254A
BR8007254A BR8007254A BR8007254A BR8007254A BR 8007254 A BR8007254 A BR 8007254A BR 8007254 A BR8007254 A BR 8007254A BR 8007254 A BR8007254 A BR 8007254A BR 8007254 A BR8007254 A BR 8007254A
Authority
BR
Brazil
Prior art keywords
thyristor
same operation
same
Prior art date
Application number
BR8007254A
Other languages
English (en)
Inventor
H Patalong
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of BR8007254A publication Critical patent/BR8007254A/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/742—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a field effect transistor
BR8007254A 1979-11-09 1980-11-07 Tiristor e processo para a operacao do mesmo BR8007254A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19792945366 DE2945366A1 (de) 1979-11-09 1979-11-09 Thyristor mit steuerbaren emitter-kurzschluessen

Publications (1)

Publication Number Publication Date
BR8007254A true BR8007254A (pt) 1981-05-19

Family

ID=6085623

Family Applications (1)

Application Number Title Priority Date Filing Date
BR8007254A BR8007254A (pt) 1979-11-09 1980-11-07 Tiristor e processo para a operacao do mesmo

Country Status (6)

Country Link
US (1) US4613766A (pt)
EP (1) EP0030274B1 (pt)
JP (1) JPS609668B2 (pt)
BR (1) BR8007254A (pt)
CA (1) CA1156770A (pt)
DE (1) DE2945366A1 (pt)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3018468A1 (de) * 1980-05-14 1981-11-19 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbaren emitterkurzschluessen und verfahren zu seinem betrieb
DE3112942A1 (de) * 1981-03-31 1982-10-07 Siemens AG, 1000 Berlin und 8000 München Thyristor und verfahren zu seinem betrieb
DE3118354A1 (de) * 1981-05-08 1982-11-25 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbaren emitterkurzschluessen und kurzschlussgebieten sowie verfahren zu seinem betrieb
DE3118365A1 (de) * 1981-05-08 1982-11-25 Siemens AG, 1000 Berlin und 8000 München Thyristor mit in den emitter eingefuegten steuerbaren emitter-kurzschlusspfaden
DE3138762A1 (de) * 1981-09-29 1983-04-14 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbaren emitter-kurzschluessen und zuendverstaerkung
DE3138763A1 (de) * 1981-09-29 1983-06-30 Siemens AG, 1000 Berlin und 8000 München Lichtzuendbarer thyristor mit steuerbaren emitter-kurzschluessen und zuendverstaerkung
IE53895B1 (en) * 1981-11-23 1989-04-12 Gen Electric Semiconductor device having rapid removal of majority carriers from an active base region thereof at device turn-off and method of fabricating this device
IE56341B1 (en) * 1981-12-16 1991-07-03 Gen Electric Multicellular thyristor
US5111268A (en) * 1981-12-16 1992-05-05 General Electric Company Semiconductor device with improved turn-off capability
US5014102A (en) * 1982-04-01 1991-05-07 General Electric Company MOSFET-gated bipolar transistors and thyristors with both turn-on and turn-off capability having single-polarity gate input signal
EP0106147A1 (en) * 1982-10-04 1984-04-25 General Electric Company Thyristor with turn-off capability
US4604638A (en) * 1983-05-17 1986-08-05 Kabushiki Kaisha Toshiba Five layer semiconductor device with separate insulated turn-on and turn-off gates
DE3330022A1 (de) * 1983-08-19 1985-02-28 Siemens AG, 1000 Berlin und 8000 München Thyristor
DE3447220A1 (de) * 1983-12-30 1985-07-11 General Electric Co., Schenectady, N.Y. Thyristor mit abschaltvermoegen mit verbessertem emitter-bereich und verfahren zu seiner herstellung
US4760432A (en) * 1985-11-04 1988-07-26 Siemens Aktiengesellschaft Thyristor having controllable emitter-base shorts
US4794432A (en) * 1987-01-27 1988-12-27 General Electric Company Mosfet structure with substrate coupled source

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL293292A (pt) * 1962-06-11
FR1483998A (pt) * 1965-05-14 1967-09-13
DE2040657C3 (de) * 1970-08-17 1975-10-02 Siemens Ag, 1000 Berlin Und 8000 Muenchen Elektronischer Schalter für Halbleiterkoppelpunkte in Fernmelde-, insbesondere Fernsprechvermittlungsanlagen
JPS5125116B1 (pt) * 1970-10-08 1976-07-28
DE2158270C3 (de) * 1970-11-26 1978-08-03 Matsushita Electric Industrial Co., Ltd., Kadoma, Osaka (Japan) Kontaktloser Schalter mit einem Feldeffekt-Thyristor
JPS5135114B1 (pt) * 1970-12-28 1976-09-30
US3858235A (en) * 1971-07-05 1974-12-31 Siemens Ag Planar four-layer-diode having a lateral arrangement of one of two partial transistors
US3831187A (en) * 1973-04-11 1974-08-20 Rca Corp Thyristor having capacitively coupled control electrode
US3896476A (en) * 1973-05-02 1975-07-22 Mitsubishi Electric Corp Semiconductor switching device
JPS5629458B2 (pt) * 1973-07-02 1981-07-08
JPS50123282A (pt) * 1974-03-15 1975-09-27
SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel
JPS5933986B2 (ja) * 1975-09-12 1984-08-20 三菱電機株式会社 半導体装置
US4087834A (en) * 1976-03-22 1978-05-02 General Electric Company Self-protecting semiconductor device
SU793421A3 (ru) * 1976-06-02 1980-12-30 Ббц Аг Браун Фототиристор
US4092703A (en) * 1977-03-15 1978-05-30 Kabushiki Kaisha Meidensha Gate controlled semiconductor device
DE2757295A1 (de) * 1977-12-22 1979-07-12 Licentia Gmbh Sicherungsschaltung fuer ein halbleiterelement
US4219833A (en) * 1978-05-22 1980-08-26 Electric Power Research Institute, Inc. Multigate light fired thyristor and method
US4301462A (en) * 1978-08-03 1981-11-17 Westinghouse Electric Corp. Light activated silicon switch with etched channel in cathode base and anode emitter communicating with cladded optical fiber
US4199774A (en) * 1978-09-18 1980-04-22 The Board Of Trustees Of The Leland Stanford Junior University Monolithic semiconductor switching device
JPS5574168A (en) * 1978-11-28 1980-06-04 Oki Electric Ind Co Ltd Pnpn switch
SE430450B (sv) * 1979-04-03 1983-11-14 Asea Ab Tvapoligt overstromsskydd for inkoppling i en stromforande ledning

Also Published As

Publication number Publication date
JPS609668B2 (ja) 1985-03-12
DE2945366A1 (de) 1981-05-14
EP0030274B1 (de) 1984-03-14
JPS5683066A (en) 1981-07-07
US4613766A (en) 1986-09-23
DE2945366C2 (pt) 1990-05-31
CA1156770A (en) 1983-11-08
EP0030274A1 (de) 1981-06-17

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