JPS5125116B1 - - Google Patents
Info
- Publication number
- JPS5125116B1 JPS5125116B1 JP8914770A JP8914770A JPS5125116B1 JP S5125116 B1 JPS5125116 B1 JP S5125116B1 JP 8914770 A JP8914770 A JP 8914770A JP 8914770 A JP8914770 A JP 8914770A JP S5125116 B1 JPS5125116 B1 JP S5125116B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8914770A JPS5125116B1 (pt) | 1970-10-08 | 1970-10-08 | |
| GB4507971A GB1356670A (en) | 1970-10-08 | 1971-09-28 | Semiconductor device |
| AU33964/71A AU437725B2 (en) | 1970-10-08 | 1971-09-28 | Semiconductor device |
| DE19712149760 DE2149760A1 (de) | 1970-10-08 | 1971-10-05 | Halbleitervorrichtung |
| CA124476A CA931661A (en) | 1970-10-08 | 1971-10-05 | Semiconductor device |
| FR7136156A FR2110299B1 (pt) | 1970-10-08 | 1971-10-07 | |
| NL7113770A NL7113770A (pt) | 1970-10-08 | 1971-10-07 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8914770A JPS5125116B1 (pt) | 1970-10-08 | 1970-10-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5125116B1 true JPS5125116B1 (pt) | 1976-07-28 |
Family
ID=13962739
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8914770A Pending JPS5125116B1 (pt) | 1970-10-08 | 1970-10-08 |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5125116B1 (pt) |
| CA (1) | CA931661A (pt) |
| DE (1) | DE2149760A1 (pt) |
| FR (1) | FR2110299B1 (pt) |
| GB (1) | GB1356670A (pt) |
| NL (1) | NL7113770A (pt) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2904424C2 (de) * | 1979-02-06 | 1982-09-02 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit Steuerung durch Feldeffekttransistor |
| DE2915885C2 (de) * | 1979-04-19 | 1983-11-17 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit Steuerung durch Feldeffekttransistor |
| DE2945380A1 (de) * | 1979-11-09 | 1981-05-21 | Siemens AG, 1000 Berlin und 8000 München | Triac mit einem mehrschichten-halbleiterkoerper |
| DE2945366A1 (de) * | 1979-11-09 | 1981-05-14 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit steuerbaren emitter-kurzschluessen |
| DE2945347A1 (de) * | 1979-11-09 | 1981-05-21 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit hilfsemitterelektrode und verfahren zu seinem betrieb |
| FR2488046A1 (fr) * | 1980-07-31 | 1982-02-05 | Silicium Semiconducteur Ssc | Dispositif de puissance a commande par transistor dmos |
| GB2243021A (en) * | 1990-04-09 | 1991-10-16 | Philips Electronic Associated | Mos- gated thyristor |
| JPH07335858A (ja) * | 1994-06-08 | 1995-12-22 | Fuji Electric Co Ltd | 絶縁ゲートサイリスタおよびその制御方法 |
| FR3127456A1 (fr) | 2021-09-30 | 2023-03-31 | Psa Automobiles Sa | Console centrale à organe de commande à deux déclencheurs d’éclairage interne, pour un véhicule |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4947715A (pt) * | 1972-09-13 | 1974-05-09 |
-
1970
- 1970-10-08 JP JP8914770A patent/JPS5125116B1/ja active Pending
-
1971
- 1971-09-28 GB GB4507971A patent/GB1356670A/en not_active Expired
- 1971-10-05 DE DE19712149760 patent/DE2149760A1/de active Pending
- 1971-10-05 CA CA124476A patent/CA931661A/en not_active Expired
- 1971-10-07 FR FR7136156A patent/FR2110299B1/fr not_active Expired
- 1971-10-07 NL NL7113770A patent/NL7113770A/xx not_active Application Discontinuation
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4947715A (pt) * | 1972-09-13 | 1974-05-09 |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1356670A (en) | 1974-06-12 |
| DE2149760A1 (de) | 1972-04-13 |
| FR2110299A1 (pt) | 1972-06-02 |
| AU3396471A (en) | 1973-04-05 |
| FR2110299B1 (pt) | 1976-09-03 |
| NL7113770A (pt) | 1972-04-11 |
| CA931661A (en) | 1973-08-07 |