BR7401204D0 - Aperfeicoamento em dispositivo semicondutor de circuito integrado - Google Patents
Aperfeicoamento em dispositivo semicondutor de circuito integradoInfo
- Publication number
- BR7401204D0 BR7401204D0 BR1204/74A BR120474A BR7401204D0 BR 7401204 D0 BR7401204 D0 BR 7401204D0 BR 1204/74 A BR1204/74 A BR 1204/74A BR 120474 A BR120474 A BR 120474A BR 7401204 D0 BR7401204 D0 BR 7401204D0
- Authority
- BR
- Brazil
- Prior art keywords
- improvement
- semiconductor device
- integrated circuit
- circuit semiconductor
- integrated
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/334,431 US3961358A (en) | 1973-02-21 | 1973-02-21 | Leakage current prevention in semiconductor integrated circuit devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BR7401204D0 true BR7401204D0 (pt) | 1974-11-05 |
Family
ID=23307191
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BR1204/74A BR7401204D0 (pt) | 1973-02-21 | 1974-02-19 | Aperfeicoamento em dispositivo semicondutor de circuito integrado |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US3961358A (pt) |
| JP (1) | JPS5212553B2 (pt) |
| BR (1) | BR7401204D0 (pt) |
| DE (1) | DE2406807B2 (pt) |
| FR (1) | FR2218658B1 (pt) |
| GB (1) | GB1426683A (pt) |
| IT (1) | IT1006928B (pt) |
| NL (1) | NL7401933A (pt) |
| YU (1) | YU36241B (pt) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53161649U (pt) * | 1977-05-23 | 1978-12-18 | ||
| IT1085486B (it) * | 1977-05-30 | 1985-05-28 | Ates Componenti Elettron | Struttura a semiconduttore integrata monolitica con giunzioni planari schermate da campi elettrostatici esterni |
| JPS5852347B2 (ja) * | 1980-02-04 | 1983-11-22 | 株式会社日立製作所 | 高耐圧半導体装置 |
| JPS5753944A (en) * | 1980-09-17 | 1982-03-31 | Hitachi Ltd | Semiconductor integrated circuit |
| DE3137914A1 (de) * | 1981-09-23 | 1983-04-07 | Siemens AG, 1000 Berlin und 8000 München | Anordnung zur kompensation von korrosionseffekten inintegrierten halbleiterschaltkreisen |
| DE3141014A1 (de) * | 1981-10-15 | 1983-04-28 | Siemens AG, 1000 Berlin und 8000 München | Integrierte schaltung |
| JPS58197780A (ja) * | 1982-05-14 | 1983-11-17 | Hitachi Ltd | 半導体圧力変換器 |
| JPS60247940A (ja) * | 1984-05-23 | 1985-12-07 | Hitachi Ltd | 半導体装置およびその製造方法 |
| US4862232A (en) * | 1986-09-22 | 1989-08-29 | General Motors Corporation | Transistor structure for high temperature logic circuits with insulation around source and drain regions |
| EP0341453B1 (de) * | 1988-05-11 | 1993-08-25 | Siemens Aktiengesellschaft | MOS-Halbleiterbauelement für hohe Sperrspannung |
| US5293061A (en) * | 1990-04-09 | 1994-03-08 | Seiko Instruments Inc. | Semiconductor device having an isolation layer region on the side wall of a groove |
| US6140665A (en) * | 1997-12-22 | 2000-10-31 | Micron Technology, Inc. | Integrated circuit probe pad metal level |
| JP2000031301A (ja) * | 1998-07-13 | 2000-01-28 | Mitsubishi Electric Corp | 半導体装置 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA881182A (en) * | 1971-09-14 | L. J. Sangster Frederik | Capacitor charge transferring device | |
| US2491237A (en) * | 1947-05-17 | 1949-12-13 | Westinghouse Electric Corp | Manufacture of miniature lamps |
| US3302076A (en) * | 1963-06-06 | 1967-01-31 | Motorola Inc | Semiconductor device with passivated junction |
| US3363152A (en) * | 1964-01-24 | 1968-01-09 | Westinghouse Electric Corp | Semiconductor devices with low leakage current across junction |
| US3347430A (en) * | 1964-05-25 | 1967-10-17 | Melpar Inc | Ring ohmic contact microelectronic component separation method |
| CA956038A (en) * | 1964-08-20 | 1974-10-08 | Roy W. Stiegler (Jr.) | Semiconductor devices with field electrodes |
| US3600648A (en) * | 1965-04-21 | 1971-08-17 | Sylvania Electric Prod | Semiconductor electrical translating device |
| JPS4417056Y1 (pt) | 1966-04-15 | 1969-07-23 | ||
| US3423606A (en) * | 1966-07-21 | 1969-01-21 | Gen Instrument Corp | Diode with sharp reverse-bias breakdown characteristic |
| US3432731A (en) * | 1966-10-31 | 1969-03-11 | Fairchild Camera Instr Co | Planar high voltage four layer structures |
| GB1202515A (en) * | 1968-01-24 | 1970-08-19 | Hitachi Ltd | Semiconductor device |
| GB1276451A (en) * | 1969-01-16 | 1972-06-01 | Signetics Corp | Semiconductor structure and method for lowering the collector resistance |
| FR2072112B1 (pt) * | 1969-12-30 | 1973-12-07 | Ibm | |
| US3695855A (en) * | 1970-01-08 | 1972-10-03 | Ibm | Doped electrical current-carrying conductive material |
| JPS4940394B1 (pt) * | 1970-08-28 | 1974-11-01 |
-
1973
- 1973-02-21 US US05/334,431 patent/US3961358A/en not_active Expired - Lifetime
-
1974
- 1974-01-15 IT IT19449/74A patent/IT1006928B/it active
- 1974-01-25 FR FR7402574A patent/FR2218658B1/fr not_active Expired
- 1974-02-13 DE DE2406807A patent/DE2406807B2/de not_active Ceased
- 1974-02-13 NL NL7401933A patent/NL7401933A/xx not_active Application Discontinuation
- 1974-02-15 GB GB712874A patent/GB1426683A/en not_active Expired
- 1974-02-19 BR BR1204/74A patent/BR7401204D0/pt unknown
- 1974-02-19 YU YU434/74A patent/YU36241B/xx unknown
- 1974-02-20 JP JP49020350A patent/JPS5212553B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| YU43474A (en) | 1981-06-30 |
| JPS49115692A (pt) | 1974-11-05 |
| IT1006928B (it) | 1976-10-20 |
| DE2406807B2 (de) | 1980-08-14 |
| US3961358A (en) | 1976-06-01 |
| AU6563774A (en) | 1975-08-21 |
| NL7401933A (pt) | 1974-08-23 |
| FR2218658B1 (pt) | 1977-09-16 |
| JPS5212553B2 (pt) | 1977-04-07 |
| YU36241B (en) | 1982-02-25 |
| FR2218658A1 (pt) | 1974-09-13 |
| GB1426683A (en) | 1976-03-03 |
| DE2406807A1 (de) | 1974-08-22 |
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