BR112019000712B1 - Método para a produção de uma sequência de camadas de fotovoltaico e sequência de camadas de fotovoltaico - Google Patents

Método para a produção de uma sequência de camadas de fotovoltaico e sequência de camadas de fotovoltaico Download PDF

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Publication number
BR112019000712B1
BR112019000712B1 BR112019000712-1A BR112019000712A BR112019000712B1 BR 112019000712 B1 BR112019000712 B1 BR 112019000712B1 BR 112019000712 A BR112019000712 A BR 112019000712A BR 112019000712 B1 BR112019000712 B1 BR 112019000712B1
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particles
sections
reaction solution
reductively
layer
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BR112019000712-1A
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English (en)
Portuguese (pt)
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BR112019000712A2 (pt
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Daniel Linder
Patrick Linder
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Dynamic Solar Systems Ag
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
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    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H10F19/904—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells characterised by the shapes of the structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
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    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1215—The active layers comprising only Group IV materials comprising at least two Group IV elements, e.g. SiGe
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1226—Active materials comprising only Group IV materials comprising multiple Group IV elements, e.g. SiC
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1226—Active materials comprising only Group IV materials comprising multiple Group IV elements, e.g. SiC
    • H10F77/1227—Active materials comprising only Group IV materials comprising multiple Group IV elements, e.g. SiC characterised by the dopants
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    • H10F77/10—Semiconductor bodies
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    • H10F77/10—Semiconductor bodies
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    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
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    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3461—Nanoparticles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Photovoltaic Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Nanotechnology (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Hybrid Cells (AREA)
  • Printing Methods (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
BR112019000712-1A 2016-07-12 2017-07-11 Método para a produção de uma sequência de camadas de fotovoltaico e sequência de camadas de fotovoltaico BR112019000712B1 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102016008383 2016-07-12
DE102016008383.2 2016-07-12
PCT/DE2017/100572 WO2018010727A1 (de) 2016-07-12 2017-07-11 Raumtemperatur-druckverfahren zur herstellung einer pv-schichtfolge und verfahrensgemäss erhaltene pv-schichtfolge

Publications (2)

Publication Number Publication Date
BR112019000712A2 BR112019000712A2 (pt) 2019-05-14
BR112019000712B1 true BR112019000712B1 (pt) 2023-02-28

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BR112019000712-1A BR112019000712B1 (pt) 2016-07-12 2017-07-11 Método para a produção de uma sequência de camadas de fotovoltaico e sequência de camadas de fotovoltaico

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Country Link
US (1) US11404592B2 (https=)
EP (1) EP3523829B1 (https=)
JP (2) JP2019522382A (https=)
CN (1) CN109743886B (https=)
BR (1) BR112019000712B1 (https=)
DE (1) DE102017115533A1 (https=)
PL (1) PL3523829T3 (https=)
RU (1) RU2750998C2 (https=)
WO (1) WO2018010727A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102020003811A1 (de) 2020-06-25 2021-12-30 Dynamic Solar Systems Ag Fußbodenheizungs-System mit verbessertem Schichtaufbau
US20230022793A1 (en) 2021-07-21 2023-01-26 Steve Kohn Hemp paper bags

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DE2017326A1 (en) 1969-12-03 1972-02-17 Arthur D Little, Inc , Cambridge, Mass (V St A) High gloss paper/board - by applying coating contg minute vesicles
US3804797A (en) 1972-09-13 1974-04-16 Dow Chemical Co Coating compositions comprising cyclic sulfonium zwitterions with carboxy containing polymers
GB1449821A (en) 1972-10-27 1976-09-15 Ici Ltd Aqueous compositions
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WO2016134703A1 (de) 2015-02-26 2016-09-01 Dynamic Solar Systems Ag Raumtemperatur-verfahren zur herstellung elektrotechnischer dünnschichten und verfahrensgemäss erhaltene dünnschichtfolge

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Publication number Publication date
JP2019522382A (ja) 2019-08-08
EP3523829C0 (de) 2023-09-06
JP2022163082A (ja) 2022-10-25
PL3523829T3 (pl) 2024-03-18
US11404592B2 (en) 2022-08-02
EP3523829A1 (de) 2019-08-14
US20190280135A1 (en) 2019-09-12
CN109743886B (zh) 2022-11-22
EP3523829B1 (de) 2023-09-06
JP7500092B2 (ja) 2024-06-17
WO2018010727A1 (de) 2018-01-18
RU2019103581A3 (https=) 2020-08-25
DE102017115533A1 (de) 2018-01-18
CN109743886A (zh) 2019-05-10
BR112019000712A2 (pt) 2019-05-14
RU2019103581A (ru) 2020-08-12
RU2750998C2 (ru) 2021-07-07

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