CN109743886B - 用于制造pv层序列的室温印刷方法以及根据该方法获得的pv层序列 - Google Patents

用于制造pv层序列的室温印刷方法以及根据该方法获得的pv层序列 Download PDF

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CN109743886B
CN109743886B CN201780055564.7A CN201780055564A CN109743886B CN 109743886 B CN109743886 B CN 109743886B CN 201780055564 A CN201780055564 A CN 201780055564A CN 109743886 B CN109743886 B CN 109743886B
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particles
reaction solution
layer
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layer sequence
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CN109743886A (zh
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丹尼尔·林德
帕特里克·林德
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Dynamic Solar Systems AG
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    • H—ELECTRICITY
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    • H10F77/10—Semiconductor bodies
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    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H10F19/904—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells characterised by the shapes of the structures
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    • H10F71/1215—The active layers comprising only Group IV materials comprising at least two Group IV elements, e.g. SiGe
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    • H10F77/122—Active materials comprising only Group IV materials
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    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1226—Active materials comprising only Group IV materials comprising multiple Group IV elements, e.g. SiC
    • H10F77/1227—Active materials comprising only Group IV materials comprising multiple Group IV elements, e.g. SiC characterised by the dopants
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
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    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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    • Y02E10/547—Monocrystalline silicon PV cells

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  • Photovoltaic Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Nanotechnology (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Hybrid Cells (AREA)
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  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
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CN201780055564.7A 2016-07-12 2017-07-11 用于制造pv层序列的室温印刷方法以及根据该方法获得的pv层序列 Active CN109743886B (zh)

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Application Number Priority Date Filing Date Title
DE102016008383 2016-07-12
DE102016008383.2 2016-07-12
PCT/DE2017/100572 WO2018010727A1 (de) 2016-07-12 2017-07-11 Raumtemperatur-druckverfahren zur herstellung einer pv-schichtfolge und verfahrensgemäss erhaltene pv-schichtfolge

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CN109743886A CN109743886A (zh) 2019-05-10
CN109743886B true CN109743886B (zh) 2022-11-22

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US (1) US11404592B2 (https=)
EP (1) EP3523829B1 (https=)
JP (2) JP2019522382A (https=)
CN (1) CN109743886B (https=)
BR (1) BR112019000712B1 (https=)
DE (1) DE102017115533A1 (https=)
PL (1) PL3523829T3 (https=)
RU (1) RU2750998C2 (https=)
WO (1) WO2018010727A1 (https=)

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DE102020003811A1 (de) 2020-06-25 2021-12-30 Dynamic Solar Systems Ag Fußbodenheizungs-System mit verbessertem Schichtaufbau
US20230022793A1 (en) 2021-07-21 2023-01-26 Steve Kohn Hemp paper bags

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0866506A1 (en) * 1996-10-09 1998-09-23 Josuke Nakata Semiconductor device

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL286090A (https=) 1962-03-12
US3633502A (en) 1969-03-13 1972-01-11 Minnesota Mining & Mfg Intaglio printing block with reservoir for powdered ink
DE2017326A1 (en) 1969-12-03 1972-02-17 Arthur D Little, Inc , Cambridge, Mass (V St A) High gloss paper/board - by applying coating contg minute vesicles
US3804797A (en) 1972-09-13 1974-04-16 Dow Chemical Co Coating compositions comprising cyclic sulfonium zwitterions with carboxy containing polymers
GB1449821A (en) 1972-10-27 1976-09-15 Ici Ltd Aqueous compositions
DE2529043C3 (de) 1975-06-30 1979-03-29 Kissel & Wolf Gmbh, 6908 Wiesloch Verfahren und Druckfarbe zur Herstellung von Blindenschrift-Drucken
LU75539A1 (https=) 1976-08-05 1978-02-13
US4614835A (en) * 1983-12-15 1986-09-30 Texas Instruments Incorporated Photovoltaic solar arrays using silicon microparticles
JPS60141590A (ja) 1983-12-28 1985-07-26 Sakata Shokai Ltd 水性オ−バ−コ−テイング用組成物およびそれを用いた印刷方法
JP2717583B2 (ja) 1988-11-04 1998-02-18 キヤノン株式会社 積層型光起電力素子
DE4018013A1 (de) 1990-06-05 1991-12-12 Siemens Ag Verfahren zur herstellung von elektrodenstrukturen fuer solarzellen
JP2641800B2 (ja) * 1990-11-30 1997-08-20 シャープ株式会社 太陽電池及びその製造方法
JPH04368887A (ja) 1991-06-17 1992-12-21 Sharp Corp プリント基板印刷用スクリーン
JPH061852A (ja) 1992-06-19 1994-01-11 Toyo Ink Mfg Co Ltd 水性顔料分散体
DE4322999A1 (de) 1993-07-09 1995-01-12 Henkel Kgaa Anionisch basierte wässrige Druckfarben mit verbesserter Deinkbarkeit
DE19720004C1 (de) 1997-05-13 1999-02-04 Pelikan Produktions Ag Tintenstrahl-Druckverfahren und Tintenset für den Mehrfarben-Tintenstrahldruck
JPH11317534A (ja) 1998-04-30 1999-11-16 Konica Corp 太陽電池及びその製造方法
DE10004997A1 (de) 1999-03-19 2000-09-21 Heidelberger Druckmasch Ag Druckverfahren und -maschine
US6689950B2 (en) * 2001-04-27 2004-02-10 The Boeing Company Paint solar cell and its fabrication
US8133768B2 (en) 2007-05-31 2012-03-13 Nthdegree Technologies Worldwide Inc Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system
US8384630B2 (en) * 2007-05-31 2013-02-26 Nthdegree Technologies Worldwide Inc Light emitting, photovoltaic or other electronic apparatus and system
EP2353188A4 (en) 2008-10-30 2015-04-08 Hak Fei Poon HYBRID, TRANSPARENT, CONDUCTIVE ELECTRODES
TWI528604B (zh) * 2009-09-15 2016-04-01 無限科技全球公司 發光、光伏或其它電子裝置及系統
JP5302345B2 (ja) * 2011-02-09 2013-10-02 株式会社ジャパンディスプレイ 表示装置
US9035174B2 (en) * 2011-12-19 2015-05-19 Nthdegree Technologies Worldwide Inc. Forming graded index lens in an all atmospheric pressure printing process to form photovoltaic panels
DE102012107100A1 (de) 2012-08-02 2014-02-06 Dynamic Solar Systems Inc. Verbesserte Schichtsolarzelle
WO2016134703A1 (de) 2015-02-26 2016-09-01 Dynamic Solar Systems Ag Raumtemperatur-verfahren zur herstellung elektrotechnischer dünnschichten und verfahrensgemäss erhaltene dünnschichtfolge

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0866506A1 (en) * 1996-10-09 1998-09-23 Josuke Nakata Semiconductor device

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JP2019522382A (ja) 2019-08-08
EP3523829C0 (de) 2023-09-06
JP2022163082A (ja) 2022-10-25
PL3523829T3 (pl) 2024-03-18
US11404592B2 (en) 2022-08-02
EP3523829A1 (de) 2019-08-14
US20190280135A1 (en) 2019-09-12
EP3523829B1 (de) 2023-09-06
JP7500092B2 (ja) 2024-06-17
WO2018010727A1 (de) 2018-01-18
RU2019103581A3 (https=) 2020-08-25
DE102017115533A1 (de) 2018-01-18
CN109743886A (zh) 2019-05-10
BR112019000712B1 (pt) 2023-02-28
BR112019000712A2 (pt) 2019-05-14
RU2019103581A (ru) 2020-08-12
RU2750998C2 (ru) 2021-07-07

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