BR112017013073A2 - estampa para litografia de estampagem, método de fabricação de uma estampa, uso de uma estampa, e método de impressão - Google Patents

estampa para litografia de estampagem, método de fabricação de uma estampa, uso de uma estampa, e método de impressão

Info

Publication number
BR112017013073A2
BR112017013073A2 BR112017013073A BR112017013073A BR112017013073A2 BR 112017013073 A2 BR112017013073 A2 BR 112017013073A2 BR 112017013073 A BR112017013073 A BR 112017013073A BR 112017013073 A BR112017013073 A BR 112017013073A BR 112017013073 A2 BR112017013073 A2 BR 112017013073A2
Authority
BR
Brazil
Prior art keywords
pattern
malleable
stamp
layer
curvilinear surface
Prior art date
Application number
BR112017013073A
Other languages
English (en)
Inventor
Antonius Verschuuren Marcus
Van Brakel Remco
Original Assignee
Koninklijke Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Nv filed Critical Koninklijke Philips Nv
Publication of BR112017013073A2 publication Critical patent/BR112017013073A2/pt

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2012Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image using liquid photohardening compositions, e.g. for the production of reliefs such as flexographic plates or stamps
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70241Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0046Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Printing Plates And Materials Therefor (AREA)
  • Micromachines (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
  • Manufacture Or Reproduction Of Printing Formes (AREA)
  • Printing Methods (AREA)

Abstract

a presente invenção refere-se a um método de fabricação de uma estampa dotada de um padrão (110) para formar um padrão em uma superfície curvilínea (10). o método compreende aplicar uma camada (115) de um precursor de material maleável sobre um original (50) com um padrão inverso (52) para formar um padrão desejado (122) na dita camada; curar o precursor de material maleável para formar uma camada de estampa maleável (120) que compreende o padrão desejado; fornecer uma estrutura de estampa intermediária pela adesão de uma camada de suporte porosa maleável (130) à camada de estampa maleável; liberar a estrutura de estampa intermediária do original; forçar a estrutura de estampa intermediária sobre a superfície curvilínea com o dito padrão de características voltado para a superfície curvilínea; formar a estampa dotada de um padrão pelo preenchimento da camada porosa de suporte maleável com um material de enchimento para reduzir a maleabilidade da camada de suporte; e remover a estampa dotada de um padrão da superfície curvilínea. uma estampa dotada de um padrão, método de impressão e artigo estampado correspondentes são também revelados.
BR112017013073A 2014-12-22 2015-12-09 estampa para litografia de estampagem, método de fabricação de uma estampa, uso de uma estampa, e método de impressão BR112017013073A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP14199595 2014-12-22
PCT/EP2015/079048 WO2016102185A1 (en) 2014-12-22 2015-12-09 Patterned stamp manufacturing method, patterned stamp and imprinting method

Publications (1)

Publication Number Publication Date
BR112017013073A2 true BR112017013073A2 (pt) 2018-01-02

Family

ID=52282482

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112017013073A BR112017013073A2 (pt) 2014-12-22 2015-12-09 estampa para litografia de estampagem, método de fabricação de uma estampa, uso de uma estampa, e método de impressão

Country Status (9)

Country Link
US (1) US11086217B2 (pt)
EP (1) EP3237971B1 (pt)
JP (1) JP6398010B2 (pt)
KR (1) KR102540395B1 (pt)
CN (1) CN107111226B (pt)
BR (1) BR112017013073A2 (pt)
RU (1) RU2695290C2 (pt)
SG (1) SG11201704948TA (pt)
WO (1) WO2016102185A1 (pt)

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JP6565321B2 (ja) * 2015-05-18 2019-08-28 凸版印刷株式会社 積層構造体、これを用いた有機el素子、およびこれらの製造方法
CN109600996B (zh) * 2016-07-27 2021-11-30 皇家飞利浦有限公司 基于聚有机硅氧烷的印模、其制造方法、其用于印刷工艺的用途以及利用其的压印方法
CN106647165B (zh) * 2016-09-28 2020-04-10 西安交通大学 一种基于柔性的可在任意曲面制造微纳结构的方法
EP3551411A4 (en) * 2016-12-09 2020-08-19 The University of Massachusetts SAMPLE FORM FOR SAMPLE TRANSFER
KR20230007371A (ko) * 2020-04-07 2023-01-12 스마트 머티리얼 솔루션즈, 인크 컨포멀 마이크로패터닝 또는 나노패터닝된 나노임프린트 리소그래피 마스터 및 이를 제조하고 사용하는 방법
CN111830609B (zh) * 2020-07-28 2022-04-15 温州大学 一种3d人工复眼及其制备方法
CN113189840A (zh) * 2021-04-16 2021-07-30 深圳先进技术研究院 微纳结构制作方法及微纳结构制作装置
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CN116779465B (zh) * 2023-08-25 2023-10-31 青岛天仁微纳科技有限责任公司 一种纳米压印晶圆缺陷检测方法

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Also Published As

Publication number Publication date
SG11201704948TA (en) 2017-07-28
EP3237971B1 (en) 2021-11-17
RU2017126139A (ru) 2019-01-25
EP3237971A1 (en) 2017-11-01
US20180004084A1 (en) 2018-01-04
JP6398010B2 (ja) 2018-09-26
US11086217B2 (en) 2021-08-10
JP2018503251A (ja) 2018-02-01
CN107111226A (zh) 2017-08-29
RU2017126139A3 (pt) 2019-05-21
CN107111226B (zh) 2021-04-13
KR20170097180A (ko) 2017-08-25
WO2016102185A1 (en) 2016-06-30
RU2695290C2 (ru) 2019-07-22
KR102540395B1 (ko) 2023-06-07

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Legal Events

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B06U Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette]
B11B Dismissal acc. art. 36, par 1 of ipl - no reply within 90 days to fullfil the necessary requirements