BR112017009843A2 - semicondutor sobre isolante com topologia de tensão de lado posterior - Google Patents

semicondutor sobre isolante com topologia de tensão de lado posterior

Info

Publication number
BR112017009843A2
BR112017009843A2 BR112017009843A BR112017009843A BR112017009843A2 BR 112017009843 A2 BR112017009843 A2 BR 112017009843A2 BR 112017009843 A BR112017009843 A BR 112017009843A BR 112017009843 A BR112017009843 A BR 112017009843A BR 112017009843 A2 BR112017009843 A2 BR 112017009843A2
Authority
BR
Brazil
Prior art keywords
layer
pattern region
region
channel
mechanical stress
Prior art date
Application number
BR112017009843A
Other languages
English (en)
Inventor
Aubain Max
A Stuber Michael
A Nygaard Paul
B Molin Stuart
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US14/540,268 external-priority patent/US9466719B2/en
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of BR112017009843A2 publication Critical patent/BR112017009843A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
    • H01L29/7843—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being an applied insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
    • H01L29/7849—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being provided under the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

as modalidades da presente invenção fornecem no aperfeiçoamento de transistores em uma estrutura de semicondutor com o uso de uma camada de tensão mecânica. a estrutura compreende uma camada padronizada que consiste em uma região escavada e uma região de padrão, uma camada de tensão mecânica localizada na região escavada e na região de padrão, uma camada ativa localizada acima da camada de tensão mecânica, um transistor de efeito de campo formado na camada ativa e uma camada de manípulo localizada acima da camada ativa. o transistor de efeito de campo compreende uma fonte, um dreno e um canal. o canal fica completamente dentro de uma extensão lateral da região de padrão. a fonte e o dreno ficam, cada uma, parcialmente dentro da extensão lateral da região de padrão. a camada de tensão mecânica altera uma mobilidade de portadora do canal. em algumas modalidades, a camada de tensão mecânica é introduzida ao lado posterior de uma estrutura de semicondutor sobre isolante.
BR112017009843A 2014-11-13 2015-11-12 semicondutor sobre isolante com topologia de tensão de lado posterior BR112017009843A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/540,268 US9466719B2 (en) 2009-07-15 2014-11-13 Semiconductor-on-insulator with back side strain topology
PCT/US2015/060463 WO2016077637A1 (en) 2014-11-13 2015-11-12 Semiconductor-on-insulator with back side strain topology

Publications (1)

Publication Number Publication Date
BR112017009843A2 true BR112017009843A2 (pt) 2018-03-13

Family

ID=55955080

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112017009843A BR112017009843A2 (pt) 2014-11-13 2015-11-12 semicondutor sobre isolante com topologia de tensão de lado posterior

Country Status (6)

Country Link
EP (1) EP3218927B1 (pt)
JP (1) JP6328852B2 (pt)
KR (1) KR101873876B1 (pt)
CN (1) CN107112329B (pt)
BR (1) BR112017009843A2 (pt)
WO (1) WO2016077637A1 (pt)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018109433B3 (de) 2018-04-19 2019-09-19 Infineon Technologies Ag Verfahren zur stabilisierung einer halbleiteranordnung
CN111769191B (zh) * 2020-07-31 2022-04-08 佛山紫熙慧众科技有限公司 一种紫外led芯片散热复合基板
JP7424274B2 (ja) * 2020-11-11 2024-01-30 株式会社Sumco 貼り合わせウェーハ及び貼り合わせウェーハの製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2276429C2 (ru) * 2000-09-21 2006-05-10 Кембридж Семикондактор Лимитед Полупроводниковое устройство и способ формирования полупроводникового устройства
US6900501B2 (en) * 2001-11-02 2005-05-31 Cree Microwave, Inc. Silicon on insulator device with improved heat removal
JP2004228273A (ja) * 2003-01-22 2004-08-12 Renesas Technology Corp 半導体装置
US7842537B2 (en) * 2005-02-14 2010-11-30 Intel Corporation Stressed semiconductor using carbon and method for producing the same
US7468313B2 (en) * 2006-05-30 2008-12-23 Freescale Semiconductor, Inc. Engineering strain in thick strained-SOI substrates
JP5055846B2 (ja) * 2006-06-09 2012-10-24 ソニー株式会社 半導体装置およびその製造方法
JP2008004577A (ja) * 2006-06-20 2008-01-10 Sony Corp 半導体装置
US7820519B2 (en) * 2006-11-03 2010-10-26 Freescale Semiconductor, Inc. Process of forming an electronic device including a conductive structure extending through a buried insulating layer
US7670931B2 (en) * 2007-05-15 2010-03-02 Novellus Systems, Inc. Methods for fabricating semiconductor structures with backside stress layers
JP5801300B2 (ja) * 2009-07-15 2015-10-28 シランナ・セミコンダクター・ユー・エス・エイ・インコーポレイテッドＳｉｌａｎｎａ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｕ．Ｓ．Ａ．， Ｉｎｃ． 背面放熱を伴う絶縁体上半導体
CN103779219B (zh) * 2012-10-22 2016-08-31 中芯国际集成电路制造(上海)有限公司 半导体器件及半导体器件的制造方法

Also Published As

Publication number Publication date
CN107112329A (zh) 2017-08-29
CN107112329B (zh) 2019-06-04
KR20170058439A (ko) 2017-05-26
KR101873876B1 (ko) 2018-07-03
JP6328852B2 (ja) 2018-05-23
JP2017537472A (ja) 2017-12-14
EP3218927B1 (en) 2019-10-16
EP3218927A1 (en) 2017-09-20
WO2016077637A1 (en) 2016-05-19

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Legal Events

Date Code Title Description
B06U Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette]
B11B Dismissal acc. art. 36, par 1 of ipl - no reply within 90 days to fullfil the necessary requirements