BR112017000154A2 - dispositivo integrado que compreende interconexão coaxial - Google Patents
dispositivo integrado que compreende interconexão coaxialInfo
- Publication number
- BR112017000154A2 BR112017000154A2 BR112017000154A BR112017000154A BR112017000154A2 BR 112017000154 A2 BR112017000154 A2 BR 112017000154A2 BR 112017000154 A BR112017000154 A BR 112017000154A BR 112017000154 A BR112017000154 A BR 112017000154A BR 112017000154 A2 BR112017000154 A2 BR 112017000154A2
- Authority
- BR
- Brazil
- Prior art keywords
- interconnect
- integrated device
- deployments
- conduct
- implementations
- Prior art date
Links
- 239000000758 substrate Substances 0.000 abstract 2
- 239000003989 dielectric material Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/105—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L27/00
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0296—Conductive pattern lay-out details not covered by sub groups H05K1/02 - H05K1/0295
- H05K1/0298—Multilayer circuits
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/284—Applying non-metallic protective coatings for encapsulating mounted components
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
- H01L2225/1017—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support
- H01L2225/1023—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support the support being an insulating substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
- H01L2225/1041—Special adaptations for top connections of the lowermost container, e.g. redistribution layer, integral interposer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
- H01L2225/1047—Details of electrical connections between containers
- H01L2225/1052—Wire or wire-like electrical connections
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49833—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the chip support structure consisting of a plurality of insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/13—Moulding and encapsulation; Deposition techniques; Protective layers
- H05K2203/1305—Moulding and encapsulation
- H05K2203/1316—Moulded encapsulation of mounted components
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Geometry (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Combinations Of Printed Boards (AREA)
- Wire Bonding (AREA)
- Structure Of Printed Boards (AREA)
Abstract
alguns recursos inovadores se referem a um dispositivo integrado que inclui um substrato, uma primeira interconexão acoplada ao substrato e uma segunda interconexão que circunda a primeira interconexão. a segunda interconexão pode ser configurada para fornecer uma conexão elétrica para aterramento. em algumas implantações, a segunda interconexão inclui uma placa. em algumas implantações, o dispositivo integrado também inclui um material dielétrico entre a primeira interconexão e a segunda interconexão. em algumas implantações, o dispositivo integrado também inclui um molde que circunda a segunda interconexão. em algumas implantações, a primeira interconexão é configurada para conduzir um sinal de energia em uma primeira direção. em algumas implantações, a segunda interconexão é configurada para conduzir um sinal de aterramento em uma segunda direção. em algumas implantações, a segunda direção é diferente da primeira direção. em algumas implantações, o dispositivo integrado pode ser um dispositivo de pacote em pacote (pop).
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/329,646 | 2014-07-11 | ||
US14/329,646 US9385077B2 (en) | 2014-07-11 | 2014-07-11 | Integrated device comprising coaxial interconnect |
PCT/US2015/039678 WO2016007706A1 (en) | 2014-07-11 | 2015-07-09 | Integrated device comprising coaxial interconnect |
Publications (2)
Publication Number | Publication Date |
---|---|
BR112017000154A2 true BR112017000154A2 (pt) | 2017-11-07 |
BR112017000154B1 BR112017000154B1 (pt) | 2022-05-17 |
Family
ID=53719982
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR112017000154-3A BR112017000154B1 (pt) | 2014-07-11 | 2015-07-09 | Dispositivo integrado que compreende interconexão coaxial |
Country Status (8)
Country | Link |
---|---|
US (1) | US9385077B2 (pt) |
EP (1) | EP3167483A1 (pt) |
JP (1) | JP6802146B2 (pt) |
KR (1) | KR102411667B1 (pt) |
CN (2) | CN115036287A (pt) |
AU (1) | AU2015287804B2 (pt) |
BR (1) | BR112017000154B1 (pt) |
WO (1) | WO2016007706A1 (pt) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10381303B2 (en) * | 2016-07-01 | 2019-08-13 | Vanguard International Semiconductor Corporation | Semiconductor device structures |
TWI594338B (zh) * | 2016-08-09 | 2017-08-01 | 矽品精密工業股份有限公司 | 電子堆疊結構及其製法 |
US10070525B2 (en) * | 2016-12-28 | 2018-09-04 | Intel Corporation | Internal to internal coaxial via transition structures in package substrates |
WO2018182652A1 (en) * | 2017-03-30 | 2018-10-04 | Intel Corporation | Semiconductor package having a coaxial first layer interconnect |
US10734334B2 (en) * | 2018-01-29 | 2020-08-04 | Marvell Asia Pte, Ltd. | Coaxial-interconnect structure for a semiconductor component |
KR20220124583A (ko) * | 2021-03-03 | 2022-09-14 | 삼성전자주식회사 | 인터포저를 포함하는 전자 장치 |
US20230036650A1 (en) * | 2021-07-27 | 2023-02-02 | Qualcomm Incorporated | Sense lines for high-speed application packages |
US20240047319A1 (en) * | 2022-08-04 | 2024-02-08 | Samsung Electronics Co., Ltd. | Semiconductor package and method of fabricating the same |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6623279B2 (en) | 1999-07-15 | 2003-09-23 | Incep Technologies, Inc. | Separable power delivery connector |
JP3601462B2 (ja) * | 2001-03-05 | 2004-12-15 | オムロン株式会社 | 電子部品のパッケージ構造 |
US6476476B1 (en) | 2001-08-16 | 2002-11-05 | Amkor Technology, Inc. | Integrated circuit package including pin and barrel interconnects |
US7045893B1 (en) * | 2004-07-15 | 2006-05-16 | Amkor Technology, Inc. | Semiconductor package and method for manufacturing the same |
DE102005002707B4 (de) | 2005-01-19 | 2007-07-26 | Infineon Technologies Ag | Verfahren zur Herstellung elektrischer Verbindungen in einem Halbleiterbauteil mittels koaxialer Mikroverbindungselemente |
KR100663265B1 (ko) | 2005-05-10 | 2007-01-02 | 삼성전기주식회사 | 다층 기판 및 그 제조 방법 |
US7989958B2 (en) | 2005-06-14 | 2011-08-02 | Cufer Assett Ltd. L.L.C. | Patterned contact |
US7307348B2 (en) * | 2005-12-07 | 2007-12-11 | Micron Technology, Inc. | Semiconductor components having through wire interconnects (TWI) |
US7608921B2 (en) * | 2006-12-07 | 2009-10-27 | Stats Chippac, Inc. | Multi-layer semiconductor package |
US20080158842A1 (en) * | 2006-12-29 | 2008-07-03 | Texas Instruments Incorporated | Stress and collapse resistant interconnect for mounting an integrated circuit package to a substrate |
US7952196B1 (en) | 2008-04-21 | 2011-05-31 | Lockheed Martin Corporation | Affordable high performance high frequency multichip module fabrication and apparatus |
TWI366890B (en) * | 2008-12-31 | 2012-06-21 | Ind Tech Res Inst | Method of manufacturing through-silicon-via and through-silicon-via structure |
EP2244291A1 (en) | 2009-04-20 | 2010-10-27 | Nxp B.V. | Multilevel interconnection system |
US8288844B2 (en) * | 2009-12-17 | 2012-10-16 | Stats Chippac Ltd. | Integrated circuit packaging system with package stacking and method of manufacture thereof |
JP2012256675A (ja) | 2011-06-08 | 2012-12-27 | Shinko Electric Ind Co Ltd | 配線基板、半導体装置及びその製造方法 |
JP5682496B2 (ja) * | 2011-07-28 | 2015-03-11 | 富士通セミコンダクター株式会社 | 半導体装置、マルチチップ半導体装置、デバイス、及び半導体装置の製造方法 |
JP5775789B2 (ja) | 2011-10-18 | 2015-09-09 | 新光電気工業株式会社 | 積層型半導体パッケージ |
US9041208B2 (en) * | 2011-11-02 | 2015-05-26 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Laminate interconnect having a coaxial via structure |
-
2014
- 2014-07-11 US US14/329,646 patent/US9385077B2/en active Active
-
2015
- 2015-07-09 AU AU2015287804A patent/AU2015287804B2/en active Active
- 2015-07-09 EP EP15741706.4A patent/EP3167483A1/en active Pending
- 2015-07-09 WO PCT/US2015/039678 patent/WO2016007706A1/en active Application Filing
- 2015-07-09 KR KR1020167036601A patent/KR102411667B1/ko active IP Right Grant
- 2015-07-09 JP JP2017500013A patent/JP6802146B2/ja active Active
- 2015-07-09 CN CN202210862033.1A patent/CN115036287A/zh active Pending
- 2015-07-09 CN CN201580036954.0A patent/CN106489191A/zh active Pending
- 2015-07-09 BR BR112017000154-3A patent/BR112017000154B1/pt active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
JP2017520929A (ja) | 2017-07-27 |
AU2015287804B2 (en) | 2020-02-27 |
US9385077B2 (en) | 2016-07-05 |
AU2015287804A1 (en) | 2017-01-05 |
JP6802146B2 (ja) | 2020-12-16 |
CN115036287A (zh) | 2022-09-09 |
WO2016007706A1 (en) | 2016-01-14 |
BR112017000154B1 (pt) | 2022-05-17 |
KR20170028901A (ko) | 2017-03-14 |
US20160013125A1 (en) | 2016-01-14 |
EP3167483A1 (en) | 2017-05-17 |
KR102411667B1 (ko) | 2022-06-20 |
CN106489191A (zh) | 2017-03-08 |
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