BR112016024700A2 - circuitos de reciclagem de carga que incluem a comutação de estágios de potência com trilhos flutuantes - Google Patents

circuitos de reciclagem de carga que incluem a comutação de estágios de potência com trilhos flutuantes

Info

Publication number
BR112016024700A2
BR112016024700A2 BR112016024700A BR112016024700A BR112016024700A2 BR 112016024700 A2 BR112016024700 A2 BR 112016024700A2 BR 112016024700 A BR112016024700 A BR 112016024700A BR 112016024700 A BR112016024700 A BR 112016024700A BR 112016024700 A2 BR112016024700 A2 BR 112016024700A2
Authority
BR
Brazil
Prior art keywords
switching transistor
switching
voltage supply
medium level
port
Prior art date
Application number
BR112016024700A
Other languages
English (en)
Inventor
Zhan Chenchang
Shi Chunlei
Mahmoudreza Saadat Seyed
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of BR112016024700A2 publication Critical patent/BR112016024700A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/012—Modifications of generator to improve response time or to decrease power consumption
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0081—Power supply means, e.g. to the switch driver

Landscapes

  • Dc-Dc Converters (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)

Abstract

trata-se de um circuito que compreende um primeiro transistor de comutação (106) e um segundo transistor de comutação (108). o primeiro transistor de comutação e o segundo transistor de comutação são acoplados em série entre uma tensão de entrada (vin) e o terra e têm um nó comum (nó de comutação) entre os mesmos para fornecer uma saída de comutação. um primeiro circuito de comutação (120) acopla seletivamente uma porta (gp) do primeiro transistor de comutação à tensão de entrada e a um primeiro fornecimento de tensão de nível médio (vls). um segundo circuito de comutação (118) acopla seletivamente uma porta (gn) do segundo transistor de comutação a um segundo fornecimento de tensão de nível médio (vhs) e ao terra. um circuito de reciclagem de carga é, assim, conectado à porta do primeiro transistor de comutação, à porta do segundo transistor de comutação, ao primeiro fornecimento de tensão de nível médio e ao segundo fornecimento de tensão de nível médio para reciclar seletivamente a carga entre o primeiro fornecimento de tensão de nível médio e o segundo fornecimento de tensão de nível médio.
BR112016024700A 2014-04-24 2015-04-23 circuitos de reciclagem de carga que incluem a comutação de estágios de potência com trilhos flutuantes BR112016024700A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/260,733 US9276562B2 (en) 2014-04-24 2014-04-24 Charge-recycling circuits including switching power stages with floating rails
PCT/US2015/027387 WO2015164664A1 (en) 2014-04-24 2015-04-23 Charge-recycling circuits including switching power stages with floating rails

Publications (1)

Publication Number Publication Date
BR112016024700A2 true BR112016024700A2 (pt) 2017-08-15

Family

ID=53175148

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112016024700A BR112016024700A2 (pt) 2014-04-24 2015-04-23 circuitos de reciclagem de carga que incluem a comutação de estágios de potência com trilhos flutuantes

Country Status (7)

Country Link
US (1) US9276562B2 (pt)
EP (1) EP3134971A1 (pt)
JP (1) JP6366734B2 (pt)
KR (1) KR101704609B1 (pt)
CN (1) CN106233629B (pt)
BR (1) BR112016024700A2 (pt)
WO (1) WO2015164664A1 (pt)

Families Citing this family (8)

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Publication number Priority date Publication date Assignee Title
US9893757B2 (en) * 2016-02-11 2018-02-13 Texas Instruments Incorporated Pulse-shaping LDO provides first and second slew-rate increases in amplitude
CN110063002B (zh) * 2016-11-01 2021-03-09 莱恩半导体股份有限公司 电荷再循环开关电容器调节器
US10666146B2 (en) * 2018-03-05 2020-05-26 Texas Instruments Incorporated Bidirectional inverting buck-boost converter converting dissipation current into recycling current
FR3082070A1 (fr) * 2018-05-29 2019-12-06 STMicroelecronics (Rousset) SAS Circuit electronique d'alimentation
US10931201B2 (en) 2019-02-04 2021-02-23 Analog Devices International Unlimited Company Dead-time supply voltage compensation
US20240030800A1 (en) * 2020-11-18 2024-01-25 The Regents Of The University Of California Charge recycling circuit and method for dc-dc converters
US20240120837A1 (en) * 2022-10-05 2024-04-11 Psemi Corporation Reduced Gate Drive for Power Converter with Dynamically Switching Ratio
CN116317483B (zh) * 2023-05-15 2023-08-22 成都市易冲半导体有限公司 电荷泵驱动电路及驱动控制系统

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Publication number Priority date Publication date Assignee Title
US5483486A (en) 1994-10-19 1996-01-09 Intel Corporation Charge pump circuit for providing multiple output voltages for flash memory
WO1998035433A1 (en) 1997-02-11 1998-08-13 The Foxboro Company Current converter and system
US6285173B1 (en) * 2000-06-06 2001-09-04 Texas Instruments Incorporated Method to switch MOSFETs using recycled, parasitic energy
JP3788926B2 (ja) 2001-10-19 2006-06-21 三菱電機株式会社 半導体装置及びトランジスタの駆動方法
KR100536603B1 (ko) 2003-07-10 2005-12-14 삼성전자주식회사 선택 모드를 갖는 전하 펌프 회로
US7394298B2 (en) 2004-08-16 2008-07-01 Intel Corporation Stepwise drivers for DC/DC converters
US20070177412A1 (en) 2006-01-31 2007-08-02 Power-One, Inc. Charge pumped driver for switched mode power supply
JP2007288935A (ja) * 2006-04-18 2007-11-01 Matsushita Electric Ind Co Ltd Ｄｃ／ｄｃコンバータ
JP4311687B2 (ja) 2006-10-06 2009-08-12 日本テキサス・インスツルメンツ株式会社 電源回路およびバッテリ装置
US8212400B2 (en) 2008-06-04 2012-07-03 Texas Instruments Incorporated Multi-rail power-supply system
US9651967B2 (en) 2011-11-09 2017-05-16 Nxp B.V. Power supply with integrated voltage clamp and current sink
US9906122B2 (en) 2012-04-03 2018-02-27 Synaptics Incorporated Methods to reduce current spikes in capacitive DC-DC converters employing gain-hopping
US9086705B2 (en) * 2012-07-19 2015-07-21 Infineon Technologies Austria Ag Charge recovery in power converter driver stages
JP5898589B2 (ja) 2012-08-10 2016-04-06 株式会社東芝 Ｄｃ−ｄｃコンバータの制御回路およびｄｃ−ｄｃコンバータ

Also Published As

Publication number Publication date
KR101704609B1 (ko) 2017-02-08
US9276562B2 (en) 2016-03-01
KR20160130511A (ko) 2016-11-11
WO2015164664A1 (en) 2015-10-29
EP3134971A1 (en) 2017-03-01
JP6366734B2 (ja) 2018-08-01
JP2017514443A (ja) 2017-06-01
US20150311884A1 (en) 2015-10-29
CN106233629A (zh) 2016-12-14
CN106233629B (zh) 2018-09-21

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Legal Events

Date Code Title Description
B08F Application fees: application dismissed [chapter 8.6 patent gazette]

Free format text: REFERENTE A 5A ANUIDADE.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: REFERENTE AO DESPACHO 8.6 PUBLICADO NA RPI 2563 DE 2020-02-18

B350 Update of information on the portal [chapter 15.35 patent gazette]