BR112016017717B1 - Método para formar pelo menos um dispositivo de cigs de película delgada e o mesmo - Google Patents

Método para formar pelo menos um dispositivo de cigs de película delgada e o mesmo Download PDF

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Publication number
BR112016017717B1
BR112016017717B1 BR112016017717-7A BR112016017717A BR112016017717B1 BR 112016017717 B1 BR112016017717 B1 BR 112016017717B1 BR 112016017717 A BR112016017717 A BR 112016017717A BR 112016017717 B1 BR112016017717 B1 BR 112016017717B1
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BR
Brazil
Prior art keywords
contact layer
cigs
laser
hole
via hole
Prior art date
Application number
BR112016017717-7A
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English (en)
Portuguese (pt)
Other versions
BR112016017717A2 (https=
Inventor
Roger Ziltener
Thomas Netter
Original Assignee
Flisom Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Flisom Ag filed Critical Flisom Ag
Publication of BR112016017717A2 publication Critical patent/BR112016017717A2/pt
Publication of BR112016017717B1 publication Critical patent/BR112016017717B1/pt

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/33—Patterning processes to connect the photovoltaic cells, e.g. laser cutting of conductive or active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1694—Thin semiconductor films on metallic or insulating substrates the films including Group I-III-VI materials, e.g. CIS or CIGS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
BR112016017717-7A 2014-01-31 2015-01-26 Método para formar pelo menos um dispositivo de cigs de película delgada e o mesmo BR112016017717B1 (pt)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
IBPCT/IB2014/058708 2014-01-31
IB2014058708 2014-01-31
EP2014025031 2014-12-31
EPPCT/EP2014/025031 2014-12-31
PCT/IB2015/050555 WO2015114498A1 (en) 2014-01-31 2015-01-26 Method for thin-film via segments in photovoltaic device

Publications (2)

Publication Number Publication Date
BR112016017717A2 BR112016017717A2 (https=) 2017-08-08
BR112016017717B1 true BR112016017717B1 (pt) 2022-01-25

Family

ID=52434916

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112016017717-7A BR112016017717B1 (pt) 2014-01-31 2015-01-26 Método para formar pelo menos um dispositivo de cigs de película delgada e o mesmo

Country Status (8)

Country Link
US (2) US10096731B2 (https=)
EP (1) EP3100307B1 (https=)
KR (1) KR102235190B1 (https=)
CN (1) CN106258012B (https=)
BR (1) BR112016017717B1 (https=)
HU (1) HUE046935T2 (https=)
MY (1) MY179233A (https=)
WO (1) WO2015114498A1 (https=)

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US10700227B2 (en) 2016-01-06 2020-06-30 Flisom Ag Flexible photovoltaic apparatus
CN107785442A (zh) * 2016-08-31 2018-03-09 北京铂阳顶荣光伏科技有限公司 太阳能薄膜电池及其制备方法
EP3648173B1 (en) * 2018-10-30 2023-05-24 IMEC vzw Thin-film photovoltaic module with integrated electronics and methods for manufacturing thereof
CN111900218B (zh) * 2020-07-10 2023-05-12 唐山科莱鼎光电科技有限公司 用于制备薄膜太阳能电池第二道刻线的方法
CN119302057A (zh) * 2023-11-24 2025-01-10 中建材玻璃新材料研究院集团有限公司 基于表面修改的金属网格横纵比优化方法

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Also Published As

Publication number Publication date
EP3100307A1 (en) 2016-12-07
HUE046935T2 (hu) 2020-03-30
MY179233A (en) 2020-11-02
US10096731B2 (en) 2018-10-09
US20190157482A1 (en) 2019-05-23
US20160359065A1 (en) 2016-12-08
BR112016017717A2 (https=) 2017-08-08
KR102235190B1 (ko) 2021-04-02
CN106258012A (zh) 2016-12-28
US10566479B2 (en) 2020-02-18
WO2015114498A1 (en) 2015-08-06
KR20160117470A (ko) 2016-10-10
CN106258012B (zh) 2018-07-17
EP3100307B1 (en) 2019-09-18

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Legal Events

Date Code Title Description
B06U Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette]
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B16A Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]

Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 26/01/2015, OBSERVADAS AS CONDICOES LEGAIS.