CN106258012B - 用于光伏器件中的薄膜通孔段的方法 - Google Patents

用于光伏器件中的薄膜通孔段的方法 Download PDF

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Publication number
CN106258012B
CN106258012B CN201580006416.7A CN201580006416A CN106258012B CN 106258012 B CN106258012 B CN 106258012B CN 201580006416 A CN201580006416 A CN 201580006416A CN 106258012 B CN106258012 B CN 106258012B
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hole
line segment
laser
cigs
contact layer
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CN106258012A (zh
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R·齐特纳
T·内特
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Jim Fulisuo Co Ltd
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Jim Fulisuo Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/33—Patterning processes to connect the photovoltaic cells, e.g. laser cutting of conductive or active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1694—Thin semiconductor films on metallic or insulating substrates the films including Group I-III-VI materials, e.g. CIS or CIGS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN201580006416.7A 2014-01-31 2015-01-26 用于光伏器件中的薄膜通孔段的方法 Active CN106258012B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
IBPCT/IB2014/058708 2014-01-31
IB2014058708 2014-01-31
EP2014025031 2014-12-31
EPPCT/EP2014/025031 2014-12-31
PCT/IB2015/050555 WO2015114498A1 (en) 2014-01-31 2015-01-26 Method for thin-film via segments in photovoltaic device

Publications (2)

Publication Number Publication Date
CN106258012A CN106258012A (zh) 2016-12-28
CN106258012B true CN106258012B (zh) 2018-07-17

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CN201580006416.7A Active CN106258012B (zh) 2014-01-31 2015-01-26 用于光伏器件中的薄膜通孔段的方法

Country Status (8)

Country Link
US (2) US10096731B2 (https=)
EP (1) EP3100307B1 (https=)
KR (1) KR102235190B1 (https=)
CN (1) CN106258012B (https=)
BR (1) BR112016017717B1 (https=)
HU (1) HUE046935T2 (https=)
MY (1) MY179233A (https=)
WO (1) WO2015114498A1 (https=)

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WO2017103663A1 (en) 2015-12-15 2017-06-22 Flisom Ag Structuring of a photovoltaic apparatus
US10700227B2 (en) 2016-01-06 2020-06-30 Flisom Ag Flexible photovoltaic apparatus
CN107785442A (zh) * 2016-08-31 2018-03-09 北京铂阳顶荣光伏科技有限公司 太阳能薄膜电池及其制备方法
EP3648173B1 (en) * 2018-10-30 2023-05-24 IMEC vzw Thin-film photovoltaic module with integrated electronics and methods for manufacturing thereof
CN111900218B (zh) * 2020-07-10 2023-05-12 唐山科莱鼎光电科技有限公司 用于制备薄膜太阳能电池第二道刻线的方法
CN119302057A (zh) * 2023-11-24 2025-01-10 中建材玻璃新材料研究院集团有限公司 基于表面修改的金属网格横纵比优化方法

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Also Published As

Publication number Publication date
EP3100307A1 (en) 2016-12-07
HUE046935T2 (hu) 2020-03-30
MY179233A (en) 2020-11-02
US10096731B2 (en) 2018-10-09
US20190157482A1 (en) 2019-05-23
US20160359065A1 (en) 2016-12-08
BR112016017717A2 (https=) 2017-08-08
KR102235190B1 (ko) 2021-04-02
CN106258012A (zh) 2016-12-28
US10566479B2 (en) 2020-02-18
WO2015114498A1 (en) 2015-08-06
KR20160117470A (ko) 2016-10-10
BR112016017717B1 (pt) 2022-01-25
EP3100307B1 (en) 2019-09-18

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