BR112016016431A2 - Dimensionamento de seções de comutação de potência através da coerção de queda de voltagem - Google Patents

Dimensionamento de seções de comutação de potência através da coerção de queda de voltagem

Info

Publication number
BR112016016431A2
BR112016016431A2 BR112016016431A BR112016016431A BR112016016431A2 BR 112016016431 A2 BR112016016431 A2 BR 112016016431A2 BR 112016016431 A BR112016016431 A BR 112016016431A BR 112016016431 A BR112016016431 A BR 112016016431A BR 112016016431 A2 BR112016016431 A2 BR 112016016431A2
Authority
BR
Brazil
Prior art keywords
coerction
dimensioning
voltage drop
power switching
switching sections
Prior art date
Application number
BR112016016431A
Other languages
English (en)
Portuguese (pt)
Inventor
Michael Coutts Ryan
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of BR112016016431A2 publication Critical patent/BR112016016431A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0016—Arrangements for reducing power consumption by using a control or a clock signal, e.g. in order to apply power supply
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/0084—Measuring voltage only
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R21/00—Arrangements for measuring electric power or power factor
    • G01R21/006—Measuring power factor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G01R27/26—Measuring inductance or capacitance; Measuring quality factor, e.g. by using the resonance method; Measuring loss factor; Measuring dielectric constants ; Measuring impedance or related variables
    • G01R27/2605—Measuring capacitance
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B13/00—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion
    • G05B13/02—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric
    • G05B13/0205—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric not using a model or a simulator of the controlled system
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Evolutionary Computation (AREA)
  • Power Engineering (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Health & Medical Sciences (AREA)
  • Medical Informatics (AREA)
  • Software Systems (AREA)
  • Automation & Control Theory (AREA)
  • Artificial Intelligence (AREA)
  • Logic Circuits (AREA)
  • Direct Current Feeding And Distribution (AREA)
  • Pulse Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dc-Dc Converters (AREA)
BR112016016431A 2014-01-16 2015-01-16 Dimensionamento de seções de comutação de potência através da coerção de queda de voltagem BR112016016431A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/157,503 US9367054B2 (en) 2014-01-16 2014-01-16 Sizing power-gated sections by constraining voltage droop
PCT/US2015/011762 WO2015109188A1 (en) 2014-01-16 2015-01-16 Sizing power-gated sections by constraining voltage droop

Publications (1)

Publication Number Publication Date
BR112016016431A2 true BR112016016431A2 (pt) 2017-08-08

Family

ID=52446439

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112016016431A BR112016016431A2 (pt) 2014-01-16 2015-01-16 Dimensionamento de seções de comutação de potência através da coerção de queda de voltagem

Country Status (7)

Country Link
US (1) US9367054B2 (https=)
EP (1) EP3095193A1 (https=)
JP (1) JP6556736B2 (https=)
KR (1) KR102219822B1 (https=)
CN (1) CN105917583B (https=)
BR (1) BR112016016431A2 (https=)
WO (1) WO2015109188A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102184740B1 (ko) * 2014-06-16 2020-11-30 에스케이하이닉스 주식회사 전자 장치 및 그를 포함하는 전자 시스템
US9438244B2 (en) * 2014-10-28 2016-09-06 Xilinx, Inc. Circuits for and methods of controlling power within an integrated circuit
US10152112B2 (en) * 2015-06-10 2018-12-11 Sonics, Inc. Power manager with a power switch arbitrator
US10928886B2 (en) * 2019-02-25 2021-02-23 Intel Corporation Frequency overshoot and voltage droop mitigation apparatus and method

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2797761B2 (ja) * 1991-07-11 1998-09-17 日本電気株式会社 パワーオン回路
WO1998054727A2 (en) * 1997-05-30 1998-12-03 Micron Technology, Inc. 256 Meg DYNAMIC RANDOM ACCESS MEMORY
KR100780750B1 (ko) 2006-05-11 2007-11-30 한국과학기술원 표준 셀과 파워 게이팅 셀을 이용한 파워 네트워크 및 이를가지는 반도체 장치
JP2008065732A (ja) 2006-09-11 2008-03-21 Nec Electronics Corp 半導体集積回路の設計方法及び設計システム
US20080120514A1 (en) * 2006-11-10 2008-05-22 Yehea Ismail Thermal management of on-chip caches through power density minimization
US7868479B2 (en) * 2007-06-27 2011-01-11 Qualcomm Incorporated Power gating for multimedia processing power management
US8958575B2 (en) * 2007-06-29 2015-02-17 Qualcomm Incorporated Amplifier with configurable DC-coupled or AC-coupled output
JP5326628B2 (ja) 2008-03-03 2013-10-30 富士通株式会社 電子回路装置
US8302059B2 (en) 2008-05-27 2012-10-30 Nxp B.V. Power switch design method and program
EP2369509A1 (en) 2010-03-01 2011-09-28 Nxp B.V. Method of generating an integrated circuit layout and integrated circuit
US8266569B2 (en) 2010-03-05 2012-09-11 Advanced Micro Devices, Inc. Identification of critical enables using MEA and WAA metrics
JP2011199094A (ja) * 2010-03-23 2011-10-06 Renesas Electronics Corp 半導体集積回路及び半導体集積回路の電源スイッチ制御方法
WO2011137339A2 (en) 2010-04-30 2011-11-03 Cornell University Systems and methods for zero-delay wakeup for power gated asynchronous pipelines
JP5638134B2 (ja) * 2010-07-19 2014-12-10 ナショナル セミコンダクター コーポレーションＮａｔｉｏｎａｌ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｃｏｒｐｏｒａｔｉｏｎ 区分された粗いおよび微細な制御を有するアダプティブ信号イコライザ
US9104395B2 (en) * 2012-05-02 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Processor and driving method thereof

Also Published As

Publication number Publication date
EP3095193A1 (en) 2016-11-23
JP6556736B2 (ja) 2019-08-07
WO2015109188A1 (en) 2015-07-23
KR102219822B1 (ko) 2021-02-23
JP2017509202A (ja) 2017-03-30
CN105917583A (zh) 2016-08-31
CN105917583B (zh) 2021-05-07
US20150198933A1 (en) 2015-07-16
KR20160108433A (ko) 2016-09-19
US9367054B2 (en) 2016-06-14

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Legal Events

Date Code Title Description
B06U Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette]
B07A Application suspended after technical examination (opinion) [chapter 7.1 patent gazette]
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 8A ANUIDADE.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2705 DE 08-11-2022 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.