BR112015006526A2 - amplificador de micro-ondas - Google Patents

amplificador de micro-ondas

Info

Publication number
BR112015006526A2
BR112015006526A2 BR112015006526A BR112015006526A BR112015006526A2 BR 112015006526 A2 BR112015006526 A2 BR 112015006526A2 BR 112015006526 A BR112015006526 A BR 112015006526A BR 112015006526 A BR112015006526 A BR 112015006526A BR 112015006526 A2 BR112015006526 A2 BR 112015006526A2
Authority
BR
Brazil
Prior art keywords
microwave amplifier
voltage source
line
terminal
amplifier device
Prior art date
Application number
BR112015006526A
Other languages
English (en)
Inventor
Noto Hifumi
Otsuka Hiroshi
Nonomura Hiroyuki
Shimozawa Mitsuhiro
Tsuyama Yoshinori
Yasunaga Yoshinori
Fujimoto Yuichi
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of BR112015006526A2 publication Critical patent/BR112015006526A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3205—Modifications of amplifiers to reduce non-linear distortion in field-effect transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/601—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators using FET's, e.g. GaAs FET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/108—A coil being added in the drain circuit of a FET amplifier stage, e.g. for noise reducing purposes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/12—A bias circuit for some stages being shown using transmission lines
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/267—A capacitor based passive circuit, e.g. filter, being used in an amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/391—Indexing scheme relating to amplifiers the output circuit of an amplifying stage comprising an LC-network
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/555—A voltage generating circuit being realised for biasing different circuit elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)
  • Microwave Amplifiers (AREA)

Abstract

1 / 1 resumo “amplificador de micro-ondasâ€� o propã³sito da invenã§ã£o ã© reduzir a extrema deterioraã§ã£o do desempenho ocasionada com base no relacionamento de frequãªncia de um sinal de pulsaã§ã£o especã­fico mesmo quando uma pluralidade de portadoras de comunicaã§ã£o for inserida em uma banda larga. um dispositivo amplificador de micro-ondas inclui: um circuito de polarizaã§ã£o formado a partir de uma linha (20) com um comprimento elã©trico de um quarto do comprimento de onda na frequãªncia a ser amplificada pelo dispositivo amplificador de micro- ondas e conectada entre o terminal de saã­da de um amplificador (11) e uma fonte de voltagem com polarizaã§ã£o (13), e um capacitor (14) conectado entre o terminal em que a linha (20) ã© conectada na fonte de voltagem com polarizaã§ã£o (13) e um aterramento (10) que determina o potencial de referãªncia do dispositivo amplificador de micro-ondas; e um circuito ressonante que inclui um resistor (15) e um capacitor (16) conectado em sã©rie entre o aterramento (10) e o terminal em que a linha (20) ã© conectada na fonte de voltagem com polarizaã§ã£o (13).
BR112015006526A 2012-09-25 2013-09-13 amplificador de micro-ondas BR112015006526A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012210863A JP6112500B2 (ja) 2012-09-25 2012-09-25 マイクロ波増幅器
PCT/JP2013/074857 WO2014050611A1 (ja) 2012-09-25 2013-09-13 マイクロ波増幅器

Publications (1)

Publication Number Publication Date
BR112015006526A2 true BR112015006526A2 (pt) 2017-07-04

Family

ID=50388018

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112015006526A BR112015006526A2 (pt) 2012-09-25 2013-09-13 amplificador de micro-ondas

Country Status (11)

Country Link
US (1) US9543898B2 (pt)
EP (1) EP2903157B1 (pt)
JP (1) JP6112500B2 (pt)
CN (1) CN104662795B (pt)
BR (1) BR112015006526A2 (pt)
CA (1) CA2885911A1 (pt)
DK (1) DK2903157T3 (pt)
ES (1) ES2710751T3 (pt)
PH (1) PH12015500606A1 (pt)
SG (1) SG11201502097WA (pt)
WO (1) WO2014050611A1 (pt)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU167770U1 (ru) * 2016-05-24 2017-01-10 Акционерное общество "Научно-производственное предприятие "Исток" имени А.И. Шокина" (АО "НПП "Исток" им. Шокина") Балансный усилитель СВЧ
CN111510074B (zh) * 2019-01-31 2023-06-23 苏州远创达科技有限公司 一种高视频带宽的射频功率放大器
JP7258612B2 (ja) * 2019-03-15 2023-04-17 株式会社東芝 高周波回路
CN110113015B (zh) * 2019-04-29 2023-03-24 中国电子科技集团公司第十三研究所 栅极偏置电路及功率放大器
KR20210033090A (ko) 2019-09-17 2021-03-26 한국전자통신연구원 초고주파 증폭 회로

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62209909A (ja) 1986-03-11 1987-09-16 Mitsubishi Electric Corp 超高周波半導体回路
JPH01233812A (ja) * 1988-03-14 1989-09-19 Fujitsu Ltd マイクロ波用多段増幅回路
JPH0983269A (ja) * 1995-09-20 1997-03-28 Fujitsu Ltd バイアス回路
JPH1141042A (ja) 1997-07-17 1999-02-12 Mitsubishi Electric Corp マイクロ波増幅器
JP3123484B2 (ja) 1997-10-29 2001-01-09 日本電気株式会社 マイクロ波増幅器
JPH11234063A (ja) * 1998-02-10 1999-08-27 Fujitsu Ltd 高周波用増幅器
US6124767A (en) 1998-05-21 2000-09-26 Delphi Components, Inc. RF/Microwave oscillator
US6166599A (en) * 1998-12-04 2000-12-26 Qualcomm, Inc. Impedance matching networks for non-linear circuits
KR20010106454A (ko) 1999-06-30 2001-11-29 다니구찌 이찌로오, 기타오카 다카시 마이크로파 증폭기
US6509799B1 (en) * 2000-11-09 2003-01-21 Intel Corporation Electrically tuned integrated amplifier for wireless communications
JP2003017948A (ja) 2001-07-05 2003-01-17 Matsushita Electric Ind Co Ltd 電力増幅器
JP2003023325A (ja) * 2001-07-06 2003-01-24 Matsushita Electric Ind Co Ltd 電力増幅器、低歪み電力増幅器、多段増幅器、電力増幅器の制御方法、送信回路、及び無線通信機器
JP2003298364A (ja) * 2002-04-03 2003-10-17 Hitachi Ltd 高周波電力増幅器
JP2005341447A (ja) * 2004-05-31 2005-12-08 Matsushita Electric Ind Co Ltd 高周波電力増幅器
JP2009253785A (ja) * 2008-04-09 2009-10-29 Panasonic Corp マルチバンド高周波電力増幅器
JP5223008B2 (ja) 2009-07-14 2013-06-26 パナソニック株式会社 高周波電力増幅器
JP5375521B2 (ja) * 2009-10-27 2013-12-25 ソニー株式会社 高周波増幅器および無線通信装置

Also Published As

Publication number Publication date
JP2014068120A (ja) 2014-04-17
CN104662795B (zh) 2018-01-12
US9543898B2 (en) 2017-01-10
ES2710751T3 (es) 2019-04-26
JP6112500B2 (ja) 2017-04-12
SG11201502097WA (en) 2015-05-28
US20150222231A1 (en) 2015-08-06
EP2903157A4 (en) 2016-05-18
CN104662795A (zh) 2015-05-27
CA2885911A1 (en) 2014-04-03
DK2903157T3 (en) 2019-03-11
EP2903157A1 (en) 2015-08-05
EP2903157B1 (en) 2019-01-09
WO2014050611A1 (ja) 2014-04-03
PH12015500606A1 (en) 2015-05-11

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Legal Events

Date Code Title Description
B08F Application fees: dismissal - article 86 of industrial property law
B08K Lapse as no evidence of payment of the annual fee has been furnished to inpi (acc. art. 87)