BR112012027923A2 - redução dos efeitos de projeções como tampa devido à ablação a laser de um nível de metal pelo uso de uma camada de polímero reticulável por luz ou por calor não reticulado - Google Patents

redução dos efeitos de projeções como tampa devido à ablação a laser de um nível de metal pelo uso de uma camada de polímero reticulável por luz ou por calor não reticulado

Info

Publication number
BR112012027923A2
BR112012027923A2 BR112012027923A BR112012027923A BR112012027923A2 BR 112012027923 A2 BR112012027923 A2 BR 112012027923A2 BR 112012027923 A BR112012027923 A BR 112012027923A BR 112012027923 A BR112012027923 A BR 112012027923A BR 112012027923 A2 BR112012027923 A2 BR 112012027923A2
Authority
BR
Brazil
Prior art keywords
effects
polymer layer
metal level
laser ablation
reduction
Prior art date
Application number
BR112012027923A
Other languages
English (en)
Inventor
Marie Heitzmann
Mohammed Benwadih
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Publication of BR112012027923A2 publication Critical patent/BR112012027923A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

redução dos efeitos de projeções como tampa devido à ablação a laser de um nível de metal pelo uso de uma camada de polímero reticulável por luz ou por calor não reticulado. o uso de um material reticulável a laser que aparece em forma não reticulada ou parcialmente reticulada para proteger, durante uma gravação a laser, os eletrodos de um transistor orgânico.
BR112012027923A 2010-05-07 2011-04-21 redução dos efeitos de projeções como tampa devido à ablação a laser de um nível de metal pelo uso de uma camada de polímero reticulável por luz ou por calor não reticulado BR112012027923A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1053566A FR2959865B1 (fr) 2010-05-07 2010-05-07 Diminution des effets de casquettes dues a l'ablation laser d'un niveau metallique par utilisation d'une couche de polymere photo- ou thermo-reticulable non reticule
PCT/FR2011/050923 WO2011138539A1 (fr) 2010-05-07 2011-04-21 Diminution des effets de casquettes dues à l'ablation laser d'un niveau métallique par utilisation d'une couche de polymère photo- ou thermo- réticulable non réticulé

Publications (1)

Publication Number Publication Date
BR112012027923A2 true BR112012027923A2 (pt) 2016-08-16

Family

ID=43420120

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112012027923A BR112012027923A2 (pt) 2010-05-07 2011-04-21 redução dos efeitos de projeções como tampa devido à ablação a laser de um nível de metal pelo uso de uma camada de polímero reticulável por luz ou por calor não reticulado

Country Status (8)

Country Link
US (1) US8580605B2 (pt)
EP (1) EP2567419A1 (pt)
JP (1) JP2013529382A (pt)
KR (1) KR20130067275A (pt)
CN (1) CN102918676A (pt)
BR (1) BR112012027923A2 (pt)
FR (1) FR2959865B1 (pt)
WO (1) WO2011138539A1 (pt)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105185835A (zh) * 2015-07-30 2015-12-23 京东方科技集团股份有限公司 一种薄膜晶体管及其制作方法、阵列基板、显示装置
CN105702700B (zh) * 2016-02-02 2018-10-26 福州大学 一种基于激光刻蚀技术的薄膜晶体管阵列及其制作方法
JP7234358B2 (ja) * 2018-11-14 2023-03-07 サン－ゴバン グラス フランス ガラス基材の層又は層の積層物の選択的エッチングのための方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6186067B1 (en) * 1999-09-30 2001-02-13 Presstek, Inc. Infrared laser-imageable lithographic printing members and methods of preparing and imaging such printing members
KR101007813B1 (ko) * 2003-11-24 2011-01-14 삼성전자주식회사 완충층을 포함하는 유기박막 트랜지스터
JP2005297498A (ja) * 2004-04-16 2005-10-27 Dainippon Printing Co Ltd 可撓性基板およびそれを用いた有機デバイス
GB0506896D0 (en) * 2005-04-05 2005-05-11 Plastic Logic Ltd Stack ablation
GB0511132D0 (en) * 2005-06-01 2005-07-06 Plastic Logic Ltd Layer-selective laser ablation patterning
WO2006129126A2 (en) * 2005-06-01 2006-12-07 Plastic Logic Limited Layer-selective laser ablation patterning
DE102005035696A1 (de) * 2005-07-27 2007-02-15 Thüringisches Institut für Textil- und Kunststoff-Forschung e.V. Verfahren zur Herstellung organischer Feldeffekttransistoren und darauf basierender Schaltungen auf Lösungsmittel- und temperaturempfindlichen Kunststoffoberflächen und organische Feldeffekttransistoren und organische optoelektronische Bauelemente nach diesem Verfahren
US7176053B1 (en) * 2005-08-16 2007-02-13 Organicid, Inc. Laser ablation method for fabricating high performance organic devices
GB2430201A (en) * 2005-09-20 2007-03-21 Seiko Epson Corp Substrate surface with different hydrophilic or oleophilic areas
JP5025124B2 (ja) * 2005-11-24 2012-09-12 株式会社リコー 有機半導体装置及びその製造方法並びに表示装置
US7545042B2 (en) * 2005-12-22 2009-06-09 Princo Corp. Structure combining an IC integrated substrate and a carrier, and method of manufacturing such structure
US7867688B2 (en) * 2006-05-30 2011-01-11 Eastman Kodak Company Laser ablation resist
JP4818839B2 (ja) * 2006-07-19 2011-11-16 株式会社 日立ディスプレイズ 液晶表示装置及びその製造方法
WO2009035036A1 (ja) * 2007-09-14 2009-03-19 Konica Minolta Holdings, Inc. 電極の形成方法及び有機薄膜トランジスタ
US8153347B2 (en) * 2008-12-04 2012-04-10 Eastman Kodak Company Flexographic element and method of imaging

Also Published As

Publication number Publication date
FR2959865A1 (fr) 2011-11-11
FR2959865B1 (fr) 2013-04-05
KR20130067275A (ko) 2013-06-21
EP2567419A1 (fr) 2013-03-13
US20130122648A1 (en) 2013-05-16
US8580605B2 (en) 2013-11-12
WO2011138539A1 (fr) 2011-11-10
JP2013529382A (ja) 2013-07-18
CN102918676A (zh) 2013-02-06

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE AS 4A E 5A ANUIDADES.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2384 DE 13-09-2016 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.

B350 Update of information on the portal [chapter 15.35 patent gazette]