WO2009035036A1 - 電極の形成方法及び有機薄膜トランジスタ - Google Patents

電極の形成方法及び有機薄膜トランジスタ Download PDF

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Publication number
WO2009035036A1
WO2009035036A1 PCT/JP2008/066421 JP2008066421W WO2009035036A1 WO 2009035036 A1 WO2009035036 A1 WO 2009035036A1 JP 2008066421 W JP2008066421 W JP 2008066421W WO 2009035036 A1 WO2009035036 A1 WO 2009035036A1
Authority
WO
WIPO (PCT)
Prior art keywords
thin film
organic thin
film transistor
forming electrode
electrode
Prior art date
Application number
PCT/JP2008/066421
Other languages
English (en)
French (fr)
Inventor
Katsura Hirai
Reiko Obuchi
Original Assignee
Konica Minolta Holdings, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Holdings, Inc. filed Critical Konica Minolta Holdings, Inc.
Priority to JP2009532213A priority Critical patent/JPWO2009035036A1/ja
Publication of WO2009035036A1 publication Critical patent/WO2009035036A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour

Landscapes

  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

　本発明は、接着性及び機械的強度が高い電極の形成方法、機械的強度及びトランジスタ性能が向上した有機薄膜トランジスタを提供する。この電極の形成方法は、支持体上に、光または熱硬化型の絶縁膜を形成し、絶縁膜上に電極を形成した後、該絶縁膜を硬化することを特徴とする。
PCT/JP2008/066421 2007-09-14 2008-09-11 電極の形成方法及び有機薄膜トランジスタ WO2009035036A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009532213A JPWO2009035036A1 (ja) 2007-09-14 2008-09-11 電極の形成方法及び有機薄膜トランジスタ

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007239036 2007-09-14
JP2007-239036 2007-09-14

Publications (1)

Publication Number Publication Date
WO2009035036A1 true WO2009035036A1 (ja) 2009-03-19

Family

ID=40452043

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/066421 WO2009035036A1 (ja) 2007-09-14 2008-09-11 電極の形成方法及び有機薄膜トランジスタ

Country Status (2)

Country Link
JP (1) JPWO2009035036A1 (ja)
WO (1) WO2009035036A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013529382A (ja) * 2010-05-07 2013-07-18 コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ 未架橋の光又は熱架橋性ポリマー層を用いた、金属レベルのレーザアブレーションに起因するキャップ状突起効果の低減
WO2016194389A1 (ja) * 2015-06-03 2016-12-08 国立大学法人山形大学 金属薄膜の製造方法及び導電構造
JP2016213221A (ja) * 2015-04-30 2016-12-15 国立研究開発法人物質・材料研究機構 金属箔を用いた電極配線の形成方法及びこれを用いた有機トランジスタの製造方法
WO2023038102A1 (ja) * 2021-09-10 2023-03-16 株式会社Ｇｃｅインスティチュート 発電素子の製造方法、発電素子、発電装置、及び電子機器

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6714995B2 (ja) * 2015-10-30 2020-07-01 株式会社ブイ・テクノロジー 成膜マスクの製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006128691A (ja) * 2004-10-27 2006-05-18 Samsung Electronics Co Ltd 薄膜トランジスタの製造方法及び表示素子
JP2007280987A (ja) * 2006-04-03 2007-10-25 Seiko Epson Corp 金属配線形成方法及びアクティブマトリクス基板の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4583904B2 (ja) * 2003-12-17 2010-11-17 株式会社半導体エネルギー研究所 表示装置の作製方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006128691A (ja) * 2004-10-27 2006-05-18 Samsung Electronics Co Ltd 薄膜トランジスタの製造方法及び表示素子
JP2007280987A (ja) * 2006-04-03 2007-10-25 Seiko Epson Corp 金属配線形成方法及びアクティブマトリクス基板の製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013529382A (ja) * 2010-05-07 2013-07-18 コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ 未架橋の光又は熱架橋性ポリマー層を用いた、金属レベルのレーザアブレーションに起因するキャップ状突起効果の低減
JP2016213221A (ja) * 2015-04-30 2016-12-15 国立研究開発法人物質・材料研究機構 金属箔を用いた電極配線の形成方法及びこれを用いた有機トランジスタの製造方法
WO2016194389A1 (ja) * 2015-06-03 2016-12-08 国立大学法人山形大学 金属薄膜の製造方法及び導電構造
JPWO2016194389A1 (ja) * 2015-06-03 2018-03-22 国立大学法人山形大学 金属薄膜の製造方法及び導電構造
WO2023038102A1 (ja) * 2021-09-10 2023-03-16 株式会社Ｇｃｅインスティチュート 発電素子の製造方法、発電素子、発電装置、及び電子機器

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Publication number Publication date
JPWO2009035036A1 (ja) 2010-12-24

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