BR0112389A - Pó para condensador - Google Patents

Pó para condensador

Info

Publication number
BR0112389A
BR0112389A BR0112389-0A BR0112389A BR0112389A BR 0112389 A BR0112389 A BR 0112389A BR 0112389 A BR0112389 A BR 0112389A BR 0112389 A BR0112389 A BR 0112389A
Authority
BR
Brazil
Prior art keywords
condenser
powder
condenser powder
independent bias
bias capability
Prior art date
Application number
BR0112389-0A
Other languages
English (en)
Other versions
BRPI0112389B1 (pt
Inventor
Karlheinz Reichert
Christoph Schnitter
Original Assignee
Starck H C Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Starck H C Gmbh filed Critical Starck H C Gmbh
Publication of BR0112389A publication Critical patent/BR0112389A/pt
Publication of BRPI0112389B1 publication Critical patent/BRPI0112389B1/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/052—Sintered electrodes
    • H01G9/0525—Powder therefor
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G33/00—Compounds of niobium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B34/00—Obtaining refractory metals
    • C22B34/20—Obtaining niobium, tantalum or vanadium
    • C22B34/24—Obtaining niobium or tantalum
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B5/00—General methods of reducing to metals
    • C22B5/02—Dry methods smelting of sulfides or formation of mattes
    • C22B5/12—Dry methods smelting of sulfides or formation of mattes by gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/052—Sintered electrodes
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/50—Solid solutions
    • C01P2002/52—Solid solutions containing elements as dopants
    • C01P2002/54—Solid solutions containing elements as dopants one element only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Powder Metallurgy (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Catalysts (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

Abstract

"Pó PARA CONDENSADOR". A invenção descreve condensadores, que contêm vanádio, na base de nióbio, e que apresentam uma capacidade independente de BIAS.
BRPI0112389A 2000-06-21 2001-06-08 pó a base de nióbio, processo para produção de pós a base de nióbio, anodo a base de nióbio e capacitor com um anodo a base de nióbio. BRPI0112389B1 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10030387A DE10030387A1 (de) 2000-06-21 2000-06-21 Kondensatorpulver
PCT/EP2001/006525 WO2001099130A1 (de) 2000-06-21 2001-06-08 Kondensatorpulver

Publications (2)

Publication Number Publication Date
BR0112389A true BR0112389A (pt) 2003-06-10
BRPI0112389B1 BRPI0112389B1 (pt) 2016-01-19

Family

ID=7646403

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0112389A BRPI0112389B1 (pt) 2000-06-21 2001-06-08 pó a base de nióbio, processo para produção de pós a base de nióbio, anodo a base de nióbio e capacitor com um anodo a base de nióbio.

Country Status (15)

Country Link
US (3) US6992881B2 (pt)
JP (1) JP5464682B2 (pt)
KR (1) KR100915729B1 (pt)
CN (1) CN100423145C (pt)
AU (2) AU6906201A (pt)
BR (1) BRPI0112389B1 (pt)
CA (1) CA2413453A1 (pt)
CZ (1) CZ305763B6 (pt)
DE (1) DE10030387A1 (pt)
GB (2) GB2403216B (pt)
IL (2) IL153356A0 (pt)
MX (1) MXPA02012723A (pt)
RU (2) RU2284602C2 (pt)
SV (1) SV2002000501A (pt)
WO (1) WO2001099130A1 (pt)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
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US6416730B1 (en) 1998-09-16 2002-07-09 Cabot Corporation Methods to partially reduce a niobium metal oxide oxygen reduced niobium oxides
US6322912B1 (en) 1998-09-16 2001-11-27 Cabot Corporation Electrolytic capacitor anode of valve metal oxide
EP2221840B1 (en) * 2000-08-10 2013-10-09 Showa Denko K.K. Niobium powder, sintered body and capacitor using the body
US6652619B2 (en) 2000-08-10 2003-11-25 Showa Denko K.K. Niobium powder, sintered body thereof, and capacitor using the same
WO2002093596A1 (fr) * 2001-05-15 2002-11-21 Showa Denko K.K. Poudre de monoxyde de niobium, produit fritte de monoxyde de niobium et condensateur utilisant ledit produit fritte de monoxyde de niobium
US7737066B2 (en) * 2001-05-15 2010-06-15 Showa Denko K.K. Niobium monoxide powder, niobium monoxide sintered body and capacitor using the sintered body
JP2003213301A (ja) * 2002-01-21 2003-07-30 Kawatetsu Mining Co Ltd ニオブ粉末及び固体電解コンデンサ
JP2003342603A (ja) * 2002-03-20 2003-12-03 Kawatetsu Mining Co Ltd ニオブ粉末及び固体電解コンデンサ
US7655214B2 (en) 2003-02-26 2010-02-02 Cabot Corporation Phase formation of oxygen reduced valve metal oxides and granulation methods
US20060275204A1 (en) * 2003-05-05 2006-12-07 Companhia Brasileira De Metalurgia E Mineracao Process for the production of niobium oxide powder for use in capacitors
US7445679B2 (en) 2003-05-16 2008-11-04 Cabot Corporation Controlled oxygen addition for metal material
CN101676217A (zh) 2003-05-19 2010-03-24 卡伯特公司 生产铌金属氧化物的方法和氧还原的铌氧化物
DE10333156A1 (de) * 2003-07-22 2005-02-24 H.C. Starck Gmbh Verfahren zur Herstellung von Niobsuboxid
US7142409B2 (en) * 2003-07-28 2006-11-28 Cabot Corporation Nitrided valve metal material and method of making same
US7952853B2 (en) 2004-04-27 2011-05-31 Medtronic, Inc. Capacitor electrolyte
US7286336B2 (en) * 2004-05-14 2007-10-23 Greatbatch Ltd. Plasma treatment of anodic oxides for electrolytic capacitors
US20080011124A1 (en) * 2004-09-08 2008-01-17 H.C. Starck Gmbh & Co. Kg Deoxidation of Valve Metal Powders
US9548166B2 (en) 2005-06-30 2017-01-17 Medtronic, Inc. Capacitor electrolyte
US20070174027A1 (en) * 2006-01-26 2007-07-26 Aleksey Moiseyev Synchronized architectural and structural CAD models
GB0613491D0 (en) * 2006-07-06 2006-08-16 Avx Ltd Binder removal particulate bodies
JP2008047576A (ja) * 2006-08-11 2008-02-28 Sanyo Electric Co Ltd 電解コンデンサ
DE102007018959A1 (de) 2007-04-21 2008-10-30 Advanced Display Technology Ag Schichtaufbau eines Elektrowetting-Systems
BRPI0814081A2 (pt) 2007-07-18 2015-02-03 Cabot Corp Óxidos de nióbio de alta voltagem e capacitores contendo os mesmos
JP5028289B2 (ja) * 2008-01-29 2012-09-19 三洋電機株式会社 固体電解コンデンサ及びその製造方法
GB0818414D0 (en) * 2008-10-08 2008-11-12 Intrinsiq Materials Ltd Nanoparticle purification
US8684260B2 (en) 2011-04-01 2014-04-01 Reynolds Consumer Products Inc. Paperboard plate with corner walls
CN104903983A (zh) * 2013-02-26 2015-09-09 宁夏东方钽业股份有限公司 一种电容器级钽铌合金丝及其制造方法
EP3192595B1 (en) * 2014-09-11 2019-04-17 Ishihara Chemical Co., Ltd. Ta-nb alloy powder and anode element for solid electrolytic capacitor
CN105916616B (zh) * 2014-11-03 2018-09-14 宁夏东方钽业股份有限公司 钽粉及其制造方法和由其制成的烧结阳极

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1728941A (en) * 1927-02-19 1929-09-24 Westinghouse Lamp Co Production of rare metals
US3203793A (en) * 1963-01-28 1965-08-31 Du Pont Porous columbium and tantalum materials
US3564348A (en) * 1969-04-07 1971-02-16 Sprague Electric Co Titanium-antimony alloy electrode electrical capacitor
US3710474A (en) * 1970-05-22 1973-01-16 Fansteel Inc Vanadium-modified tantalum foil
FR2218633B1 (pt) * 1973-02-19 1977-07-22 Lignes Telegraph Telephon
US3867129A (en) * 1974-02-05 1975-02-18 Metallurgie Hoboken Anodically oxidizable metal powder
DE2636279B1 (de) * 1976-08-12 1978-06-08 Standard Elek K Lorenz Ag Verfahren zur Herstellung von poroesen Anodenkoerpern
JPS6026288B2 (ja) * 1979-04-10 1985-06-22 松下電器産業株式会社 固体電解コンデンサ用焼結電極
IT1213506B (it) * 1986-10-22 1989-12-20 Oronzio De Nora Impianti Anodo permanente per il recupero di metalli dsa soluzioni acide fluocomplesse.
US5448447A (en) * 1993-04-26 1995-09-05 Cabot Corporation Process for making an improved tantalum powder and high capacitance low leakage electrode made therefrom
CN1289243C (zh) * 1996-11-07 2006-12-13 卡伯特公司 铌粉、铌电容器和用其降低直流电泄漏的方法
US6051044A (en) * 1998-05-04 2000-04-18 Cabot Corporation Nitrided niobium powders and niobium electrolytic capacitors
WO2000067936A1 (en) * 1998-05-06 2000-11-16 H.C. Starck, Inc. Metal powders produced by the reduction of the oxides with gaseous magnesium
EP1144147B8 (en) * 1998-05-06 2012-04-04 H.C. Starck GmbH METHOD FOR PRODUCING METAL POWDERS BY REDUCTION OF THE OXIDES, Nb AND Nb-Ta POWDERS AND CAPACITOR ANODE OBTAINED THEREWITH
US6576038B1 (en) * 1998-05-22 2003-06-10 Cabot Corporation Method to agglomerate metal particles and metal particles having improved properties
CA2341233C (en) * 1998-07-30 2008-09-23 Moltech Invent S.A. Multi-layer non-carbon metal-based anodes for aluminium production cells
US6322912B1 (en) * 1998-09-16 2001-11-27 Cabot Corporation Electrolytic capacitor anode of valve metal oxide
DE19847012A1 (de) * 1998-10-13 2000-04-20 Starck H C Gmbh Co Kg Niobpulver und Verfahren zu dessen Herstellung
US6515846B1 (en) * 1999-02-08 2003-02-04 H.C. Starck, Inc. Capacitor substrates made of refractory metal nitrides
WO2000056486A1 (en) * 1999-03-19 2000-09-28 Cabot Corporation Making niobium and other metal powders by milling
US6558447B1 (en) * 1999-05-05 2003-05-06 H.C. Starck, Inc. Metal powders produced by the reduction of the oxides with gaseous magnesium
DE10044450C1 (de) * 2000-09-08 2002-01-17 Epcos Ag Verfahren zur Herstellung einer Elektrode für Kondensatoren und zur Herstellung eines Kondensators
US20030104923A1 (en) * 2001-05-15 2003-06-05 Showa Denko K.K. Niobium oxide powder, niobium oxide sintered body and capacitor using the sintered body

Also Published As

Publication number Publication date
CZ20024219A3 (cs) 2003-05-14
RU2391731C2 (ru) 2010-06-10
MXPA02012723A (es) 2003-05-14
GB2403216B (en) 2005-02-23
GB2382464B (en) 2005-01-12
US20090278095A1 (en) 2009-11-12
RU2284602C2 (ru) 2006-09-27
RU2006118262A (ru) 2007-12-20
GB0422194D0 (en) 2004-11-03
SV2002000501A (es) 2002-12-02
JP2003535981A (ja) 2003-12-02
CZ305763B6 (cs) 2016-03-09
AU6906201A (en) 2002-01-02
JP5464682B2 (ja) 2014-04-09
CA2413453A1 (en) 2001-12-27
KR100915729B1 (ko) 2009-09-04
RU2391731C9 (ru) 2011-05-20
US7833511B2 (en) 2010-11-16
KR20030014719A (ko) 2003-02-19
US6992881B2 (en) 2006-01-31
GB2382464A (en) 2003-05-28
GB0229143D0 (en) 2003-01-15
CN100423145C (zh) 2008-10-01
DE10030387A1 (de) 2002-01-03
IL153356A (en) 2008-08-07
US20050094354A1 (en) 2005-05-05
GB2403216A (en) 2004-12-29
WO2001099130A1 (de) 2001-12-27
US20040028922A1 (en) 2004-02-12
CN1437753A (zh) 2003-08-20
AU2001269062B2 (en) 2006-07-20
BRPI0112389B1 (pt) 2016-01-19
IL153356A0 (en) 2003-07-06

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Legal Events

Date Code Title Description
B15K Others concerning applications: alteration of classification

Free format text: A CLASSIFICACAO ANTERIOR ERA: H01G 9/052

Ipc: H01G 9/052 (2006.01), B22F 1/00 (2006.01), B22F 9/

B15K Others concerning applications: alteration of classification

Free format text: AS CLASSIFICACOES ANTERIORES ERAM: H01G 9/052 , B22F 1/00 , B22F 9/20 , C22C 27/02

Ipc: C01G 33/00 (2006.01), C01G 31/00 (2006.01), H01G 9

B07A Application suspended after technical examination (opinion) [chapter 7.1 patent gazette]
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B16A Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]

Free format text: PRAZO DE VALIDADE: 10 (DEZ) ANOS CONTADOS A PARTIR DE 19/01/2016, OBSERVADAS AS CONDICOES LEGAIS.

B25A Requested transfer of rights approved
B25D Requested change of name of applicant approved
B25G Requested change of headquarter approved
B21F Lapse acc. art. 78, item iv - on non-payment of the annual fees in time

Free format text: REFERENTE A 23A ANUIDADE.

B24J Lapse because of non-payment of annual fees (definitively: art 78 iv lpi, resolution 113/2013 art. 12)

Free format text: EM VIRTUDE DA EXTINCAO PUBLICADA NA RPI 2778 DE 02-04-2024 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDA A EXTINCAO DA PATENTE E SEUS CERTIFICADOS, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.