BE898947A - Thyristor auto-protege par eclatement distant - Google Patents
Thyristor auto-protege par eclatement distantInfo
- Publication number
- BE898947A BE898947A BE0/212419A BE212419A BE898947A BE 898947 A BE898947 A BE 898947A BE 0/212419 A BE0/212419 A BE 0/212419A BE 212419 A BE212419 A BE 212419A BE 898947 A BE898947 A BE 898947A
- Authority
- BE
- Belgium
- Prior art keywords
- base region
- thyristor
- remote self
- protected
- protected thyristor
- Prior art date
Links
- 230000009172 bursting Effects 0.000 abstract 1
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 230000001960 triggered effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
- H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US46800483A | 1983-02-18 | 1983-02-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE898947A true BE898947A (fr) | 1984-08-17 |
Family
ID=23858035
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE0/212419A BE898947A (fr) | 1983-02-18 | 1984-02-17 | Thyristor auto-protege par eclatement distant |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS59158560A (pt) |
| BE (1) | BE898947A (pt) |
| BR (1) | BR8400676A (pt) |
| DE (1) | DE3405548A1 (pt) |
| FR (1) | FR2541512A1 (pt) |
| GB (1) | GB2135515A (pt) |
| IE (1) | IE840248L (pt) |
| IN (1) | IN159387B (pt) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01136369A (ja) * | 1987-11-21 | 1989-05-29 | Toshiba Corp | 過電圧保護機能付半導体装置の製造方法 |
| JP3155797B2 (ja) * | 1991-12-26 | 2001-04-16 | 株式会社日立製作所 | 過電圧自己保護型半導体装置、及び、それを使用した半導体回路 |
| DE102013004561B4 (de) * | 2013-03-15 | 2017-05-04 | Infineon Technologies Ag | Eine vorrichtung zum erkennen einer krafteinwirkung und ein verfahren zum erkennen einer krafteinwirkung |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS508315B1 (pt) * | 1970-02-20 | 1975-04-03 | ||
| DE2238564C3 (de) * | 1972-08-04 | 1981-02-19 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Thyristor |
| US4087834A (en) * | 1976-03-22 | 1978-05-02 | General Electric Company | Self-protecting semiconductor device |
| US4012761A (en) * | 1976-04-19 | 1977-03-15 | General Electric Company | Self-protected semiconductor device |
| CH594989A5 (pt) * | 1976-09-03 | 1978-01-31 | Bbc Brown Boveri & Cie | |
| DE2747945A1 (de) * | 1976-11-01 | 1978-05-18 | Electric Power Res Inst | Thyristor-bauelement fuer eigenschutz |
-
1984
- 1984-02-02 GB GB08402719A patent/GB2135515A/en not_active Withdrawn
- 1984-02-02 IE IE24884A patent/IE840248L/xx unknown
- 1984-02-09 IN IN94/CAL/84A patent/IN159387B/en unknown
- 1984-02-14 FR FR8402232A patent/FR2541512A1/fr not_active Withdrawn
- 1984-02-15 BR BR8400676A patent/BR8400676A/pt unknown
- 1984-02-16 DE DE19843405548 patent/DE3405548A1/de not_active Withdrawn
- 1984-02-17 BE BE0/212419A patent/BE898947A/fr not_active IP Right Cessation
- 1984-02-17 JP JP2739684A patent/JPS59158560A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB8402719D0 (en) | 1984-03-07 |
| GB2135515A (en) | 1984-08-30 |
| BR8400676A (pt) | 1984-09-25 |
| FR2541512A1 (fr) | 1984-08-24 |
| JPS59158560A (ja) | 1984-09-08 |
| IE840248L (en) | 1984-08-18 |
| DE3405548A1 (de) | 1984-08-23 |
| IN159387B (pt) | 1987-05-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RE | Patent lapsed |
Owner name: WESTINGHOUSE ELECTRIC CORP. Effective date: 19860228 |