BE898947A - Thyristor auto-protege par eclatement distant - Google Patents

Thyristor auto-protege par eclatement distant

Info

Publication number
BE898947A
BE898947A BE0/212419A BE212419A BE898947A BE 898947 A BE898947 A BE 898947A BE 0/212419 A BE0/212419 A BE 0/212419A BE 212419 A BE212419 A BE 212419A BE 898947 A BE898947 A BE 898947A
Authority
BE
Belgium
Prior art keywords
base region
thyristor
remote self
protected
protected thyristor
Prior art date
Application number
BE0/212419A
Other languages
English (en)
Inventor
J Przybysz
J Ostop
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of BE898947A publication Critical patent/BE898947A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
  • Light Receiving Elements (AREA)

Abstract

L'invention concerne un thyristor auto-protégé par éclatement distant. Ce thyristor comporte un puits (134) formé dans une première région de base (114) et pénétrant dans cette région de base d'une distance prédéterminée. Une seconde région de base à une largeur de Wn sous le puits, inférieure à la largeur du reste de cette région de base de manière que : Wd < Wn. L'invention s'applique notamment à des thyristors déclenchés par de la lumière.
BE0/212419A 1983-02-18 1984-02-17 Thyristor auto-protege par eclatement distant BE898947A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US46800483A 1983-02-18 1983-02-18

Publications (1)

Publication Number Publication Date
BE898947A true BE898947A (fr) 1984-08-17

Family

ID=23858035

Family Applications (1)

Application Number Title Priority Date Filing Date
BE0/212419A BE898947A (fr) 1983-02-18 1984-02-17 Thyristor auto-protege par eclatement distant

Country Status (8)

Country Link
JP (1) JPS59158560A (fr)
BE (1) BE898947A (fr)
BR (1) BR8400676A (fr)
DE (1) DE3405548A1 (fr)
FR (1) FR2541512A1 (fr)
GB (1) GB2135515A (fr)
IE (1) IE840248L (fr)
IN (1) IN159387B (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01136369A (ja) * 1987-11-21 1989-05-29 Toshiba Corp 過電圧保護機能付半導体装置の製造方法
JP3155797B2 (ja) * 1991-12-26 2001-04-16 株式会社日立製作所 過電圧自己保護型半導体装置、及び、それを使用した半導体回路
DE102013004561B4 (de) * 2013-03-15 2017-05-04 Infineon Technologies Ag Eine vorrichtung zum erkennen einer krafteinwirkung und ein verfahren zum erkennen einer krafteinwirkung

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS508315B1 (fr) * 1970-02-20 1975-04-03
DE2238564C3 (de) * 1972-08-04 1981-02-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor
US4087834A (en) * 1976-03-22 1978-05-02 General Electric Company Self-protecting semiconductor device
US4012761A (en) * 1976-04-19 1977-03-15 General Electric Company Self-protected semiconductor device
CH594989A5 (fr) * 1976-09-03 1978-01-31 Bbc Brown Boveri & Cie
DE2747945A1 (de) * 1976-11-01 1978-05-18 Electric Power Res Inst Thyristor-bauelement fuer eigenschutz

Also Published As

Publication number Publication date
GB8402719D0 (en) 1984-03-07
GB2135515A (en) 1984-08-30
BR8400676A (pt) 1984-09-25
FR2541512A1 (fr) 1984-08-24
JPS59158560A (ja) 1984-09-08
IE840248L (en) 1984-08-18
DE3405548A1 (de) 1984-08-23
IN159387B (fr) 1987-05-09

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: WESTINGHOUSE ELECTRIC CORP.

Effective date: 19860228