BE893251A - Procede d'attaque ionique reactive de couches contenant du tantale et du silicium - Google Patents

Procede d'attaque ionique reactive de couches contenant du tantale et du silicium

Info

Publication number
BE893251A
BE893251A BE0/208144A BE208144A BE893251A BE 893251 A BE893251 A BE 893251A BE 0/208144 A BE0/208144 A BE 0/208144A BE 208144 A BE208144 A BE 208144A BE 893251 A BE893251 A BE 893251A
Authority
BE
Belgium
Prior art keywords
silicon
reactive ion
layers containing
containing tantalum
ion attack
Prior art date
Application number
BE0/208144A
Other languages
English (en)
French (fr)
Inventor
J S Deslauriers
H J Levinstein
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of BE893251A publication Critical patent/BE893251A/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01306—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon
    • H10D64/01308—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon the conductor further comprising a non-elemental silicon additional conductive layer, e.g. a metal silicide layer formed by the reaction of silicon with an implanted metal
    • H10D64/01312—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon the conductor further comprising a non-elemental silicon additional conductive layer, e.g. a metal silicide layer formed by the reaction of silicon with an implanted metal the additional layer comprising a metal or metal silicide formed by deposition, i.e. without a silicidation reaction, e.g. sputter deposition
BE0/208144A 1981-05-22 1982-05-19 Procede d'attaque ionique reactive de couches contenant du tantale et du silicium BE893251A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US26643381A 1981-05-22 1981-05-22

Publications (1)

Publication Number Publication Date
BE893251A true BE893251A (fr) 1982-09-16

Family

ID=23014579

Family Applications (1)

Application Number Title Priority Date Filing Date
BE0/208144A BE893251A (fr) 1981-05-22 1982-05-19 Procede d'attaque ionique reactive de couches contenant du tantale et du silicium

Country Status (8)

Country Link
JP (1) JPS57198633A (enExample)
BE (1) BE893251A (enExample)
CA (1) CA1202597A (enExample)
DE (1) DE3219284A1 (enExample)
FR (1) FR2506519B1 (enExample)
GB (1) GB2098931B (enExample)
IT (1) IT1151209B (enExample)
NL (1) NL8202103A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3216823A1 (de) * 1982-05-05 1983-11-10 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von strukturen von aus metallsilizid und polysilizium bestehenden doppelschichten auf integrierte halbleiterschaltungen enthaltenden substraten durch reaktives ionenaetzen
US4414057A (en) * 1982-12-03 1983-11-08 Inmos Corporation Anisotropic silicide etching process
DE3315719A1 (de) * 1983-04-29 1984-10-31 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von strukturen von aus metallsiliziden bzw. silizid-polysilizium bestehenden doppelschichten fuer integrierte halbleiterschaltungen durch reaktives ionenaetzen
US4528066A (en) * 1984-07-06 1985-07-09 Ibm Corporation Selective anisotropic reactive ion etching process for polysilicide composite structures
NL8500771A (nl) * 1985-03-18 1986-10-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij een op een laag siliciumoxide aanwezige dubbellaag - bestaande uit poly-si en een silicide - in een plasma wordt geetst.
WO1987000345A1 (en) * 1985-06-28 1987-01-15 American Telephone & Telegraph Company Procedure for fabricating devices involving dry etching
DE4114741C2 (de) * 1990-07-04 1998-11-12 Mitsubishi Electric Corp Verfahren zur Bildung einer Leiterbahn auf einem Halbleitersubstrat
US6177337B1 (en) * 1998-01-06 2001-01-23 International Business Machines Corporation Method of reducing metal voids in semiconductor device interconnection

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5519873A (en) * 1978-07-28 1980-02-12 Mitsubishi Electric Corp Forming method of metallic layer pattern for semiconductor

Also Published As

Publication number Publication date
NL8202103A (nl) 1982-12-16
CA1202597A (en) 1986-04-01
IT8221430A0 (it) 1982-05-21
FR2506519A1 (fr) 1982-11-26
DE3219284C2 (enExample) 1989-08-10
FR2506519B1 (fr) 1985-07-26
JPS57198633A (en) 1982-12-06
GB2098931B (en) 1985-02-06
GB2098931A (en) 1982-12-01
IT1151209B (it) 1986-12-17
DE3219284A1 (de) 1982-12-16

Similar Documents

Publication Publication Date Title
BE893559A (fr) Traitement d'affections arthritiques
FR2543959B1 (fr) Copolymere convenant specialement a la preparation de lentilles de contact molles et contenant de l'eau
IT1102404B (it) Particelle di poliuretano-poliurea resistenti alla pressione per l'incapsulamento di sostanze attive e processo per la loro preparazione
FR2523308B1 (fr) Electrode selective d'ion et procede pour sa preparation
FR2507867B1 (fr) Procede de preparation de l'a-glycosylglycyrrhizine et applications de celle-ci
IT8248010A0 (it) Dispositivo per l'introduzione di oggeti o gruppi di oggetti in un imballaggio aperto
FR2574796B1 (fr) Procede de preparation de composes d'isocyanate contenant du silicium
IT1157210B (it) Metodo per migliorare la processabilita' di polimeri e composizioni risultanti
FR2506519B1 (fr) Procede d'attaque ionique reactive de couches contenant du tantale et du silicium
FR2503438B1 (fr) Procede de reduction de volume et d'enrobage de dechets contenant de l'eau
ES513027A0 (es) "metodo de producir nuevas lineas de celulas t humanas".
PL239683A1 (en) Fungicide and method of manufacture of active substance therefor
BE889604A (fr) Procede de preparation d'acetaldehyde et d'ethanol
BE893807A (fr) Protection de films minces d'argent ou de cuivre
FR2532157B1 (fr) Procede de preparation d'une gelee contenant des sarcocarpes
FR2481286B1 (fr) Matiere chromogene de la classe des azaphtalides, son procede de preparation, solution chromogene et support d'enregistrement la contenant
BE878047A (fr) Procede pour la preparation selective de plusieurs halogenures purs et/ou melanges d'halogenures separes
BE893533A (fr) Procede et composition pour l'electrodeposition de l'etain
PT80111A (fr) Procede de preparation de nouveaux arylthio-pyridinyl-alcanole et de compositions fongicides les contenant
FR2532309B1 (fr) Perfluorocycloamines et preparation d'emulsions therapeutiques contenant ces perfluorocycloamines
BE875160A (fr) Colorants nitres contenant du silicium et leur procede de preparation
FR2539991B1 (fr) Onguent gras contenant notamment du butyro-propionate d'hydrocortisone, son procede de preparation et son application therapeutique
PT84746A (fr) Procede de preparation de composes a groupements triazole ou imidazole et tetrahydrofuranne et de compositions fongicides le contenant
BE894492A (fr) Herbicides contenant des derives de carboxamidothiocarbamates et procede pour la preparation des constituants actifs de ces herbicides
BE875230A (fr) Colorants nitres contenant du silicium et leur procede de preparation

Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: WESTERN ELECTRIC CY INC.

Effective date: 20000531