BE893251A - METHOD OF REACTIVE ION ATTACK OF LAYERS CONTAINING TANTALUM AND SILICON - Google Patents

METHOD OF REACTIVE ION ATTACK OF LAYERS CONTAINING TANTALUM AND SILICON

Info

Publication number
BE893251A
BE893251A BE0/208144A BE208144A BE893251A BE 893251 A BE893251 A BE 893251A BE 0/208144 A BE0/208144 A BE 0/208144A BE 208144 A BE208144 A BE 208144A BE 893251 A BE893251 A BE 893251A
Authority
BE
Belgium
Prior art keywords
silicon
reactive ion
layers containing
containing tantalum
ion attack
Prior art date
Application number
BE0/208144A
Other languages
French (fr)
Inventor
J S Deslauriers
H J Levinstein
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of BE893251A publication Critical patent/BE893251A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
    • H01L21/28061—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
BE0/208144A 1981-05-22 1982-05-19 METHOD OF REACTIVE ION ATTACK OF LAYERS CONTAINING TANTALUM AND SILICON BE893251A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US26643381A 1981-05-22 1981-05-22

Publications (1)

Publication Number Publication Date
BE893251A true BE893251A (en) 1982-09-16

Family

ID=23014579

Family Applications (1)

Application Number Title Priority Date Filing Date
BE0/208144A BE893251A (en) 1981-05-22 1982-05-19 METHOD OF REACTIVE ION ATTACK OF LAYERS CONTAINING TANTALUM AND SILICON

Country Status (8)

Country Link
JP (1) JPS57198633A (en)
BE (1) BE893251A (en)
CA (1) CA1202597A (en)
DE (1) DE3219284A1 (en)
FR (1) FR2506519B1 (en)
GB (1) GB2098931B (en)
IT (1) IT1151209B (en)
NL (1) NL8202103A (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3216823A1 (en) * 1982-05-05 1983-11-10 Siemens AG, 1000 Berlin und 8000 München METHOD FOR PRODUCING STRUCTURES OF DOUBLE LAYERS CONSISTING OF METAL SILICIDE AND POLYSILIZIUM ON SUBSTRATES CONTAINING INTEGRATED SEMICONDUCTOR CIRCUITS BY REACTIVE ION NETWORK
US4414057A (en) * 1982-12-03 1983-11-08 Inmos Corporation Anisotropic silicide etching process
DE3315719A1 (en) * 1983-04-29 1984-10-31 Siemens AG, 1000 Berlin und 8000 München METHOD FOR PRODUCING STRUCTURES FROM METAL SILICIDES OR SILICIDE-POLYSILIZIUM EXISTING DOUBLE LAYERS FOR INTEGRATED SEMICONDUCTOR CIRCUITS THROUGH REACTIVE ION NETWORK
US4528066A (en) * 1984-07-06 1985-07-09 Ibm Corporation Selective anisotropic reactive ion etching process for polysilicide composite structures
NL8500771A (en) * 1985-03-18 1986-10-16 Philips Nv METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING A DOUBLE LAYER PRESENT ON A LOW SILICON OXIDE CONTAINING POLY-SI AND A SILICIDE
KR930006526B1 (en) * 1985-06-28 1993-07-16 아메리칸 텔리폰 앤드 텔레그라프 캄파니 Dry ethcing procedure and devices formed by this procedure
DE4114741C2 (en) * 1990-07-04 1998-11-12 Mitsubishi Electric Corp Method for forming a printed conductor on a semiconductor substrate
US6177337B1 (en) * 1998-01-06 2001-01-23 International Business Machines Corporation Method of reducing metal voids in semiconductor device interconnection

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5519873A (en) * 1978-07-28 1980-02-12 Mitsubishi Electric Corp Forming method of metallic layer pattern for semiconductor

Also Published As

Publication number Publication date
FR2506519B1 (en) 1985-07-26
GB2098931A (en) 1982-12-01
DE3219284A1 (en) 1982-12-16
NL8202103A (en) 1982-12-16
FR2506519A1 (en) 1982-11-26
IT8221430A0 (en) 1982-05-21
IT1151209B (en) 1986-12-17
CA1202597A (en) 1986-04-01
DE3219284C2 (en) 1989-08-10
JPS57198633A (en) 1982-12-06
GB2098931B (en) 1985-02-06

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: WESTERN ELECTRIC CY INC.

Effective date: 20000531