BE891039A - Procede de nickelage de semiconducteurs au silicium et procede pour la fabrication de cellules solaires comportant ces semiconducteurs nickeles. - Google Patents

Procede de nickelage de semiconducteurs au silicium et procede pour la fabrication de cellules solaires comportant ces semiconducteurs nickeles.

Info

Publication number
BE891039A
BE891039A BE0/206476A BE206476A BE891039A BE 891039 A BE891039 A BE 891039A BE 0/206476 A BE0/206476 A BE 0/206476A BE 206476 A BE206476 A BE 206476A BE 891039 A BE891039 A BE 891039A
Authority
BE
Belgium
Prior art keywords
semiconductors
nickeling
nickel
solar cells
manufacturing solar
Prior art date
Application number
BE0/206476A
Other languages
English (en)
Original Assignee
Mobil Tyco Solar Energy Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mobil Tyco Solar Energy Corp filed Critical Mobil Tyco Solar Energy Corp
Publication of BE891039A publication Critical patent/BE891039A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/06—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/08—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemically Coating (AREA)
BE0/206476A 1979-10-26 1981-11-09 Procede de nickelage de semiconducteurs au silicium et procede pour la fabrication de cellules solaires comportant ces semiconducteurs nickeles. BE891039A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/088,396 US4321283A (en) 1979-10-26 1979-10-26 Nickel plating method

Publications (1)

Publication Number Publication Date
BE891039A true BE891039A (fr) 1982-05-10

Family

ID=22211130

Family Applications (1)

Application Number Title Priority Date Filing Date
BE0/206476A BE891039A (fr) 1979-10-26 1981-11-09 Procede de nickelage de semiconducteurs au silicium et procede pour la fabrication de cellules solaires comportant ces semiconducteurs nickeles.

Country Status (2)

Country Link
US (1) US4321283A (fr)
BE (1) BE891039A (fr)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4361718A (en) * 1980-12-19 1982-11-30 E. I. Du Pont De Nemours And Company Silicon solar cell N-region metallizations comprising a nickel-antimony alloy
US4359485A (en) * 1981-05-01 1982-11-16 Bell Telephone Laboratories, Incorporated Radiation induced deposition of metal on semiconductor surfaces
US4542258A (en) * 1982-05-28 1985-09-17 Solarex Corporation Bus bar interconnect for a solar cell
US4451969A (en) * 1983-01-10 1984-06-05 Mobil Solar Energy Corporation Method of fabricating solar cells
NL8420337A (nl) * 1983-12-19 1985-11-01 Mobil Solar Energy Corp Werkwijze voor het vervaardigen van zonnecellen.
AU570309B2 (en) * 1984-03-26 1988-03-10 Unisearch Limited Buried contact solar cell
US4650695A (en) * 1985-05-13 1987-03-17 Mobil Solar Energy Corporation Method of fabricating solar cells
US4721688A (en) * 1986-09-18 1988-01-26 Mobil Solar Energy Corporation Method of growing crystals
US4910049A (en) * 1986-12-15 1990-03-20 International Business Machines Corporation Conditioning a dielectric substrate for plating thereon
DE3705251A1 (de) * 1987-02-19 1988-09-01 Standard Elektrik Lorenz Ag Verfahren zur herstellung einer stromlos abgeschiedenen, loetbaren metallschicht
EP0325606B1 (fr) * 1987-07-07 1994-09-07 Mobil Solar Energy Corporation Procede de fabrication de cellules solaires a couches anti-reflets
US5010040A (en) * 1988-12-30 1991-04-23 Mobil Solar Energy Corporation Method of fabricating solar cells
NL8900305A (nl) * 1989-02-08 1990-09-03 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
FR2644292A1 (fr) * 1989-03-08 1990-09-14 Commissariat Energie Atomique Procede de depot electrolytique sur un substrat semi-conducteur
US5011567A (en) * 1989-12-06 1991-04-30 Mobil Solar Energy Corporation Method of fabricating solar cells
FR2676594B1 (fr) * 1991-05-17 1997-04-18 Sgs Thomson Microelectronics Procede de prise de contact sur un composant semiconducteur.
EP0630525B1 (fr) * 1992-03-20 2006-08-30 Shell Solar GmbH Procédé de fabrication d'une cellule solaire avec metallization combinée
US5498850A (en) * 1992-09-11 1996-03-12 Philip Morris Incorporated Semiconductor electrical heater and method for making same
US5543333A (en) * 1993-09-30 1996-08-06 Siemens Solar Gmbh Method for manufacturing a solar cell having combined metallization
US5716873A (en) * 1996-05-06 1998-02-10 Micro Technology, Inc. Method for cleaning waste matter from the backside of a semiconductor wafer substrate
DE19718971A1 (de) * 1997-05-05 1998-11-12 Bosch Gmbh Robert Stromlose, selektive Metallisierung strukturierter Metalloberflächen
US6127268A (en) * 1997-06-11 2000-10-03 Micronas Intermetall Gmbh Process for fabricating a semiconductor device with a patterned metal layer
US6406743B1 (en) * 1997-07-10 2002-06-18 Industrial Technology Research Institute Nickel-silicide formation by electroless Ni deposition on polysilicon
NL1012961C2 (nl) * 1999-09-02 2001-03-05 Stichting Energie Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
JP2002305311A (ja) * 2001-01-31 2002-10-18 Shin Etsu Handotai Co Ltd 太陽電池の製造方法および太陽電池
WO2008100603A1 (fr) * 2007-02-15 2008-08-21 Massachusetts Institute Of Technology Cellules solaires ayant des surfaces texturées
US8017859B2 (en) * 2007-10-17 2011-09-13 Spansion Llc Photovoltaic thin coating for collector generator
CN101257059B (zh) * 2007-11-30 2011-04-13 无锡尚德太阳能电力有限公司 一种电化学沉积太阳能电池金属电极的方法
DE102009008152A1 (de) 2009-02-09 2010-08-19 Nb Technologies Gmbh Siliziumsolarzelle
TWI396771B (zh) * 2009-08-25 2013-05-21 羅門哈斯電子材料有限公司 形成矽化鎳之強化方法
US20110195542A1 (en) 2010-02-05 2011-08-11 E-Chem Enterprise Corp. Method of providing solar cell electrode by electroless plating and an activator used therein
US20110192316A1 (en) 2010-02-05 2011-08-11 E-Chem Enterprise Corp. Electroless plating solution for providing solar cell electrode
KR20120079591A (ko) * 2011-01-05 2012-07-13 엘지전자 주식회사 태양전지 및 그 제조 방법
CN102446744A (zh) * 2011-10-12 2012-05-09 上海华力微电子有限公司 一种去除形成镍硅化物后多余镍的方法
US20130112274A1 (en) * 2011-11-06 2013-05-09 Qxwave Inc Technique for fabrication of thin solar cells
US9153712B2 (en) * 2012-09-27 2015-10-06 Sunpower Corporation Conductive contact for solar cell
WO2014071458A1 (fr) * 2012-11-09 2014-05-15 Newsouth Innovations Pty Ltd Formation de contacts métalliques
WO2014204620A1 (fr) 2013-06-17 2014-12-24 Applied Materials, Inc. Procédé de cuivrage par l'intermédiaire de vias en silicium en utilisant une surface de contact arrière d'une plaquette humide
TW201705239A (zh) * 2015-06-04 2017-02-01 愛美科公司 一種在矽的相反極性表面上形成金屬電極的方法
US9935004B2 (en) 2016-01-21 2018-04-03 Applied Materials, Inc. Process and chemistry of plating of through silicon vias

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3489603A (en) * 1966-07-13 1970-01-13 Motorola Inc Surface pretreatment process
US4152824A (en) * 1977-12-30 1979-05-08 Mobil Tyco Solar Energy Corporation Manufacture of solar cells

Also Published As

Publication number Publication date
US4321283A (en) 1982-03-23

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: MOBIL SOLAR ENERGY CORP.

Effective date: 19911130