FR2500216B1 - Procede de fabrication de cellules solaires au silicium amorphe - Google Patents
Procede de fabrication de cellules solaires au silicium amorpheInfo
- Publication number
- FR2500216B1 FR2500216B1 FR8117005A FR8117005A FR2500216B1 FR 2500216 B1 FR2500216 B1 FR 2500216B1 FR 8117005 A FR8117005 A FR 8117005A FR 8117005 A FR8117005 A FR 8117005A FR 2500216 B1 FR2500216 B1 FR 2500216B1
- Authority
- FR
- France
- Prior art keywords
- manufacture
- amorphous silicon
- solar cells
- silicon solar
- cells
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/234,567 US4339470A (en) | 1981-02-13 | 1981-02-13 | Fabricating amorphous silicon solar cells by varying the temperature _of the substrate during deposition of the amorphous silicon layer |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2500216A1 FR2500216A1 (fr) | 1982-08-20 |
FR2500216B1 true FR2500216B1 (fr) | 1987-05-07 |
Family
ID=22881915
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8117005A Expired FR2500216B1 (fr) | 1981-02-13 | 1981-09-08 | Procede de fabrication de cellules solaires au silicium amorphe |
Country Status (5)
Country | Link |
---|---|
US (1) | US4339470A (fr) |
JP (1) | JPS57139972A (fr) |
DE (1) | DE3140139A1 (fr) |
FR (1) | FR2500216B1 (fr) |
GB (1) | GB2093271B (fr) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57157577A (en) * | 1981-03-23 | 1982-09-29 | Sumitomo Electric Ind Ltd | Manufacture of thin film photovoltaic element |
US4407710A (en) * | 1981-10-15 | 1983-10-04 | Exxon Research And Engineering Co. | Hybrid method of making an amorphous silicon P-I-N semiconductor device |
DE3276918D1 (en) * | 1981-11-20 | 1987-09-10 | Chronar Corp | Bandgap control in amorphous semiconductors |
US4465706A (en) * | 1981-11-20 | 1984-08-14 | Chronar Corporation | Bandgap control in amorphous semiconductors |
US4485128A (en) * | 1981-11-20 | 1984-11-27 | Chronar Corporation | Bandgap control in amorphous semiconductors |
AT380974B (de) * | 1982-04-06 | 1986-08-11 | Shell Austria | Verfahren zum gettern von halbleiterbauelementen |
JPS58204527A (ja) * | 1982-05-24 | 1983-11-29 | Semiconductor Energy Lab Co Ltd | 繊維構造を有する半導体およびその作製方法 |
DE3317269A1 (de) * | 1983-05-11 | 1984-12-13 | Messerschmitt-Bölkow-Blohm GmbH, 8000 München | Duennschicht-solarzellenanordnung |
US4670762A (en) * | 1984-02-10 | 1987-06-02 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Amorphous silicon semiconductor and process for same |
JPH0782998B2 (ja) * | 1990-08-06 | 1995-09-06 | プラズマ・フィジクス・コーポレーション | 半導体装置 |
DE19581590T1 (de) * | 1994-03-25 | 1997-04-17 | Amoco Enron Solar | Erhöhung eines Stabilitätsverhaltens von Vorrichtungen auf der Grundlage von amorphem Silizium, die durch Plasmaablagerung unter hochgradiger Wasserstoffverdünnung bei niedrigerer Temperatur hergestellt werden |
JPH1116838A (ja) * | 1997-06-24 | 1999-01-22 | Nec Corp | 多結晶シリコン膜の成長方法およびcvd装置 |
US6121541A (en) * | 1997-07-28 | 2000-09-19 | Bp Solarex | Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys |
US6077722A (en) * | 1998-07-14 | 2000-06-20 | Bp Solarex | Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts |
US6111189A (en) * | 1998-07-28 | 2000-08-29 | Bp Solarex | Photovoltaic module framing system with integral electrical raceways |
KR20120118092A (ko) * | 2011-04-18 | 2012-10-26 | 삼성디스플레이 주식회사 | 태양 전지 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4064521A (en) * | 1975-07-28 | 1977-12-20 | Rca Corporation | Semiconductor device having a body of amorphous silicon |
US4192195A (en) * | 1975-12-03 | 1980-03-11 | Nippondenso Co., Ltd. | Starter with a shock absorbing arrangement |
US4109271A (en) * | 1977-05-27 | 1978-08-22 | Rca Corporation | Amorphous silicon-amorphous silicon carbide photovoltaic device |
US4226898A (en) * | 1978-03-16 | 1980-10-07 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process |
US4162505A (en) * | 1978-04-24 | 1979-07-24 | Rca Corporation | Inverted amorphous silicon solar cell utilizing cermet layers |
JPS5562778A (en) * | 1978-11-02 | 1980-05-12 | Fuji Photo Film Co Ltd | Preparation of photoconductor film |
JPS55151328A (en) * | 1979-05-16 | 1980-11-25 | Hitachi Ltd | Method and apparatus for fabricating hydrogen-containing amorphous semiconductor film |
JPS55154781A (en) * | 1979-05-22 | 1980-12-02 | Shunpei Yamazaki | Semiconductor device |
US4237151A (en) * | 1979-06-26 | 1980-12-02 | The United States Of America As Represented By The United States Department Of Energy | Thermal decomposition of silane to form hydrogenated amorphous Si film |
US4226643A (en) * | 1979-07-16 | 1980-10-07 | Rca Corporation | Method of enhancing the electronic properties of an undoped and/or N-type hydrogenated amorphous silicon film |
US4253882A (en) * | 1980-02-15 | 1981-03-03 | University Of Delaware | Multiple gap photovoltaic device |
-
1981
- 1981-02-13 US US06/234,567 patent/US4339470A/en not_active Expired - Lifetime
- 1981-09-08 FR FR8117005A patent/FR2500216B1/fr not_active Expired
- 1981-10-06 GB GB8130100A patent/GB2093271B/en not_active Expired
- 1981-10-08 JP JP56161916A patent/JPS57139972A/ja active Granted
- 1981-10-09 DE DE19813140139 patent/DE3140139A1/de active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0359588B2 (fr) | 1991-09-11 |
US4339470A (en) | 1982-07-13 |
DE3140139A1 (de) | 1982-09-09 |
GB2093271B (en) | 1984-09-19 |
GB2093271A (en) | 1982-08-25 |
FR2500216A1 (fr) | 1982-08-20 |
JPS57139972A (en) | 1982-08-30 |
DE3140139C2 (fr) | 1990-03-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |