BE889408A - Procede de fabrication de thyristors reduisant la charge de recouvrement en inverse sans accroitre sensiblement la chute de tension directe - Google Patents
Procede de fabrication de thyristors reduisant la charge de recouvrement en inverse sans accroitre sensiblement la chute de tension directeInfo
- Publication number
- BE889408A BE889408A BE0/205236A BE205236A BE889408A BE 889408 A BE889408 A BE 889408A BE 0/205236 A BE0/205236 A BE 0/205236A BE 205236 A BE205236 A BE 205236A BE 889408 A BE889408 A BE 889408A
- Authority
- BE
- Belgium
- Prior art keywords
- thyristors
- manufacture
- reducing
- voltage drop
- direct voltage
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/084—Ion implantation of compound devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Ceramic Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/163,548 US4311534A (en) | 1980-06-27 | 1980-06-27 | Reducing the reverse recovery charge of thyristors by nuclear irradiation |
Publications (1)
Publication Number | Publication Date |
---|---|
BE889408A true BE889408A (fr) | 1981-12-28 |
Family
ID=22590518
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE0/205236A BE889408A (fr) | 1980-06-27 | 1981-06-26 | Procede de fabrication de thyristors reduisant la charge de recouvrement en inverse sans accroitre sensiblement la chute de tension directe |
Country Status (10)
Country | Link |
---|---|
US (1) | US4311534A (fr) |
JP (1) | JPS608632B2 (fr) |
BE (1) | BE889408A (fr) |
BR (1) | BR8103993A (fr) |
CA (1) | CA1160359A (fr) |
DE (1) | DE3124988A1 (fr) |
FR (1) | FR2489594A1 (fr) |
GB (1) | GB2079051B (fr) |
IE (1) | IE51813B1 (fr) |
IN (1) | IN154271B (fr) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5958866A (ja) * | 1982-09-28 | 1984-04-04 | Mitsubishi Electric Corp | サイリスタ |
EP0130457A1 (fr) * | 1983-07-01 | 1985-01-09 | Hahn-Meitner-Institut Berlin Gesellschaft mit beschränkter Haftung | Dispositif semi-conducteur avec au moins une jonction pn et des ions étroitement localisés dans la profondeur de la couche de base, procédé pour sa fabrication et son utilisation |
JPH0640581B2 (ja) * | 1984-03-23 | 1994-05-25 | 株式会社東芝 | スイツチング素子 |
JPS60207376A (ja) * | 1984-03-31 | 1985-10-18 | Toyota Central Res & Dev Lab Inc | 高速静電誘導サイリスタおよびその製造方法 |
JPS6276556A (ja) * | 1985-09-28 | 1987-04-08 | Toyota Central Res & Dev Lab Inc | 高速静電誘導サイリスタ |
JPS62235782A (ja) * | 1986-04-07 | 1987-10-15 | Toyota Central Res & Dev Lab Inc | 半導体装置 |
JP2604580B2 (ja) * | 1986-10-01 | 1997-04-30 | 三菱電機株式会社 | アノード短絡形ゲートターンオフサイリスタ |
FR2611756B1 (fr) * | 1987-02-17 | 1989-07-13 | Molinier Sa | Procede de fabrication d'une bande de contention cohesive, les moyens de mise en oeuvre et la bande obtenue |
JPS649658A (en) * | 1987-07-01 | 1989-01-12 | Mitsubishi Electric Corp | Gto thyristor |
JPS6440969U (fr) * | 1987-09-07 | 1989-03-10 | ||
US4951110A (en) * | 1987-11-03 | 1990-08-21 | Siemens Aktiengesellschaft | Power semiconductor structural element with four layers |
GB2213988B (en) * | 1987-12-18 | 1992-02-05 | Matsushita Electric Works Ltd | Semiconductor device |
JP2617497B2 (ja) * | 1987-12-18 | 1997-06-04 | 松下電工株式会社 | 半導体装置 |
EP0343369A1 (fr) * | 1988-05-19 | 1989-11-29 | Siemens Aktiengesellschaft | Méthode de fabrication d'un thyristor |
DE3839210A1 (de) * | 1988-11-19 | 1990-05-23 | Asea Brown Boveri | Verfahren zum axialen einstellen der traegerlebensdauer |
US5284780A (en) * | 1989-09-28 | 1994-02-08 | Siemens Aktiengesellschaft | Method for increasing the electric strength of a multi-layer semiconductor component |
JPH067533U (ja) * | 1992-04-21 | 1994-02-01 | 清水 静治 | 多目的肩当て |
US5907004A (en) * | 1995-02-07 | 1999-05-25 | Dsm N.V. | Thermoplastic elastomer |
US5883403A (en) * | 1995-10-03 | 1999-03-16 | Hitachi, Ltd. | Power semiconductor device |
WO1997047044A1 (fr) * | 1996-06-06 | 1997-12-11 | The Board Of Trustees Of The University Of Illinois | Transistor bipolaire a grille isolee et a pertes reduites |
JP3488599B2 (ja) * | 1996-10-17 | 2004-01-19 | 株式会社東芝 | 半導体装置 |
DE19649800A1 (de) * | 1996-12-02 | 1998-06-04 | Asea Brown Boveri | Verfahren zur Herstellung eines Abschaltthyristors mit einer anodenseitigen Stopschicht und einem transparenten Anodenemitter |
AU5847599A (en) * | 1998-07-29 | 2000-02-21 | Infineon Technologies, Ag | Power semiconductor having a reduced reverse current |
US7037814B1 (en) * | 2003-10-10 | 2006-05-02 | National Semiconductor Corporation | Single mask control of doping levels |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3877977A (en) * | 1971-11-10 | 1975-04-15 | Shozo Watanabe | Floating rust preventing film coated steel members for buildings and structures |
US3840887A (en) * | 1972-08-25 | 1974-10-08 | Westinghouse Electric Corp | Selective irradiation of gated semiconductor devices to control gate sensitivity |
US3872493A (en) * | 1972-08-25 | 1975-03-18 | Westinghouse Electric Corp | Selective irradiation of junctioned semiconductor devices |
US3852612A (en) * | 1972-08-31 | 1974-12-03 | Westinghouse Electric Corp | Selective low level irradiation to improve blocking voltage yield of junctioned semiconductors |
US3881963A (en) * | 1973-01-18 | 1975-05-06 | Westinghouse Electric Corp | Irradiation for fast switching thyristors |
US3881964A (en) * | 1973-03-05 | 1975-05-06 | Westinghouse Electric Corp | Annealing to control gate sensitivity of gated semiconductor devices |
US3809582A (en) * | 1973-03-08 | 1974-05-07 | Westinghouse Electric Corp | Irradiation for fast recovery of high power junction diodes |
US3990091A (en) * | 1973-04-25 | 1976-11-02 | Westinghouse Electric Corporation | Low forward voltage drop thyristor |
US4040170A (en) * | 1975-05-27 | 1977-08-09 | Westinghouse Electric Corporation | Integrated gate assisted turn-off, amplifying gate thyristor, and a method for making the same |
US4056408A (en) * | 1976-03-17 | 1977-11-01 | Westinghouse Electric Corporation | Reducing the switching time of semiconductor devices by nuclear irradiation |
US4076555A (en) * | 1976-05-17 | 1978-02-28 | Westinghouse Electric Corporation | Irradiation for rapid turn-off reverse blocking diode thyristor |
US4075037A (en) * | 1976-05-17 | 1978-02-21 | Westinghouse Electric Corporation | Tailoring of recovery charge in power diodes and thyristors by irradiation |
US4259683A (en) * | 1977-02-07 | 1981-03-31 | General Electric Company | High switching speed P-N junction devices with recombination means centrally located in high resistivity layer |
US4137099A (en) * | 1977-07-11 | 1979-01-30 | General Electric Company | Method of controlling leakage currents and reverse recovery time of rectifiers by hot electron irradiation and post-annealing treatments |
US4134778A (en) * | 1977-09-02 | 1979-01-16 | General Electric Company | Selective irradiation of thyristors |
US4224083A (en) * | 1978-07-31 | 1980-09-23 | Westinghouse Electric Corp. | Dynamic isolation of conductivity modulation states in integrated circuits |
US4240844A (en) * | 1978-12-22 | 1980-12-23 | Westinghouse Electric Corp. | Reducing the switching time of semiconductor devices by neutron irradiation |
US4291329A (en) * | 1979-08-31 | 1981-09-22 | Westinghouse Electric Corp. | Thyristor with continuous recombination center shunt across planar emitter-base junction |
-
1980
- 1980-06-27 US US06/163,548 patent/US4311534A/en not_active Expired - Lifetime
-
1981
- 1981-06-09 IE IE1272/81A patent/IE51813B1/en unknown
- 1981-06-11 IN IN631/CAL/81A patent/IN154271B/en unknown
- 1981-06-16 CA CA000379882A patent/CA1160359A/fr not_active Expired
- 1981-06-25 DE DE19813124988 patent/DE3124988A1/de active Granted
- 1981-06-25 GB GB8119593A patent/GB2079051B/en not_active Expired
- 1981-06-25 BR BR8103993A patent/BR8103993A/pt unknown
- 1981-06-26 FR FR8112685A patent/FR2489594A1/fr active Granted
- 1981-06-26 JP JP56098501A patent/JPS608632B2/ja not_active Expired
- 1981-06-26 BE BE0/205236A patent/BE889408A/fr not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPS608632B2 (ja) | 1985-03-04 |
GB2079051A (en) | 1982-01-13 |
JPS5739577A (en) | 1982-03-04 |
CA1160359A (fr) | 1984-01-10 |
DE3124988C2 (fr) | 1992-01-30 |
FR2489594A1 (fr) | 1982-03-05 |
US4311534A (en) | 1982-01-19 |
BR8103993A (pt) | 1982-03-09 |
DE3124988A1 (de) | 1982-03-11 |
IE51813B1 (en) | 1987-04-01 |
GB2079051B (en) | 1984-03-28 |
IN154271B (fr) | 1984-10-13 |
FR2489594B1 (fr) | 1984-07-06 |
IE811272L (en) | 1981-12-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RE | Patent lapsed |
Owner name: WESTINGHOUSE ELECTRIC CORP. Effective date: 19890630 |