BE841241A - Enceinte de reaction pour le depot de silicium elementaire - Google Patents
Enceinte de reaction pour le depot de silicium elementaireInfo
- Publication number
- BE841241A BE841241A BE166537A BE166537A BE841241A BE 841241 A BE841241 A BE 841241A BE 166537 A BE166537 A BE 166537A BE 166537 A BE166537 A BE 166537A BE 841241 A BE841241 A BE 841241A
- Authority
- BE
- Belgium
- Prior art keywords
- reaction vessel
- silicon deposit
- elementary silicon
- elementary
- deposit
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Silicon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
- Length Measuring Devices With Unspecified Measuring Means (AREA)
- Radiation Pyrometers (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2518853A DE2518853C3 (de) | 1975-04-28 | 1975-04-28 | Vorrichtung zum Abscheiden von elementarem Silicium aus einem Reaktionsgas |
Publications (1)
Publication Number | Publication Date |
---|---|
BE841241A true BE841241A (fr) | 1976-08-16 |
Family
ID=5945200
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE166537A BE841241A (fr) | 1975-04-28 | 1976-04-28 | Enceinte de reaction pour le depot de silicium elementaire |
Country Status (5)
Country | Link |
---|---|
US (1) | US4023520A (xx) |
JP (1) | JPS594374B2 (xx) |
BE (1) | BE841241A (xx) |
DE (1) | DE2518853C3 (xx) |
IT (1) | IT1059985B (xx) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2743856C2 (de) * | 1977-09-29 | 1987-03-05 | Siemens AG, 1000 Berlin und 8000 München | Vorrichtung zum Abscheiden von Halbleitermaterial |
DE2743950C2 (de) * | 1977-09-29 | 1987-02-12 | Siemens AG, 1000 Berlin und 8000 München | Vorrichtung zum Abscheiden von Halbleitermaterial |
DE2854707C2 (de) * | 1978-12-18 | 1985-08-14 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Vorrichtung zur thermischen Zersetzung gasförmiger Verbindungen und ihre Verwendung |
DE3342586C2 (de) * | 1982-11-27 | 1986-08-28 | Toshiba Kikai K.K., Tokio/Tokyo | Vorrichtung zur Gasphasen-Epitaxie |
US6165311A (en) * | 1991-06-27 | 2000-12-26 | Applied Materials, Inc. | Inductively coupled RF plasma reactor having an overhead solenoidal antenna |
JP5205910B2 (ja) * | 2006-10-31 | 2013-06-05 | 三菱マテリアル株式会社 | トリクロロシラン製造装置 |
JP5059665B2 (ja) * | 2008-03-14 | 2012-10-24 | 株式会社トクヤマ | シリコン製造装置 |
TWI464292B (zh) * | 2008-03-26 | 2014-12-11 | Gtat Corp | 塗覆金之多晶矽反應器系統和方法 |
MY156940A (en) * | 2008-03-26 | 2016-04-15 | Gt Solar Inc | System and methods for distributing gas in a chemical vapor deposition reactor |
DE102009010086B4 (de) * | 2009-01-29 | 2013-04-11 | Centrotherm Sitec Gmbh | Anordnung und Verfahren zur Messung der Temperatur und des Dickenwachstums von Siliziumstäben in einem Silizium-Abscheidereaktor |
US8540818B2 (en) * | 2009-04-28 | 2013-09-24 | Mitsubishi Materials Corporation | Polycrystalline silicon reactor |
NO334785B1 (no) * | 2009-05-29 | 2014-05-26 | Dynatec Engineering As | Reaktor og fremgangsmåte for fremstilling av silisium |
DE102009035952A1 (de) * | 2009-08-03 | 2011-02-10 | Graeber Engineering Consultants Gmbh | Flansch für ein CVD-Reaktorgehäuse, Verwendung einer Kamera bei einem CVD-Verfahren sowie CVD-Verfahren zur Erzeugung von Siliziumstangen |
KR101115697B1 (ko) * | 2009-12-02 | 2012-03-06 | 웅진폴리실리콘주식회사 | 에너지 효율을 높여주는 복사열 차단막을 갖는 화학기상증착 반응기 |
DE102011077455B4 (de) * | 2011-06-14 | 2014-02-06 | Wacker Chemie Ag | Verfahren zur Bestimmung von Verunreinigungen in Silicium und Reaktor zur Abscheidung von polykristallinem Silicium |
WO2019110091A1 (de) * | 2017-12-05 | 2019-06-13 | Wacker Chemie Ag | Verfahren zur bestimmung einer oberflächentemperatur |
WO2020234401A1 (de) * | 2019-05-21 | 2020-11-26 | Wacker Chemie Ag | Verfahren zur herstellung von polykristallinem silicium |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3367303A (en) * | 1963-05-29 | 1968-02-06 | Monsanto Co | Chemical equipment |
DE1244733B (de) * | 1963-11-05 | 1967-07-20 | Siemens Ag | Vorrichtung zum Aufwachsen einkristalliner Halbleitermaterialschichten auf einkristallinen Grundkoerpern |
DE1229986B (de) * | 1964-07-21 | 1966-12-08 | Siemens Ag | Vorrichtung zur Gewinnung reinen Halbleiter-materials |
US3372671A (en) * | 1965-05-26 | 1968-03-12 | Westinghouse Electric Corp | Apparatus for producing vapor growth of silicon crystals |
DE1521494B1 (de) * | 1966-02-25 | 1970-11-26 | Siemens Ag | Vorrichtung zum Eindiffundieren von Fremdstoffen in Halbleiterkoerper |
DE2033444C3 (de) * | 1970-07-06 | 1979-02-15 | Siemens Ag | Vorrichtung zum Eindiffundieren von Dotierstoffen in Scheiben aus Halbleitermaterial |
DE2050076C3 (de) * | 1970-10-12 | 1980-06-26 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum Herstellen von Rohren aus Halbleitermaterial |
DE2113720C3 (de) * | 1971-03-22 | 1980-09-11 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Durchmesserregelung beim tiegellosen Zonenschmelzen von Halbleiterstäben |
US3820935A (en) * | 1971-10-04 | 1974-06-28 | Siemens Ag | Method and device for the production of tubular members of silicon |
DE2324365C3 (de) * | 1973-05-14 | 1978-05-11 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Reaktionsgefäß zum Abscheiden von Halbleitermaterial auf erhitzte Trägerkörper |
BE817066R (fr) * | 1973-11-29 | 1974-10-16 | Enceinte de reaction pour le depot de matiere semi-concuctrice sur des corps de support chauffes |
-
1975
- 1975-04-28 DE DE2518853A patent/DE2518853C3/de not_active Expired
-
1976
- 1976-04-21 US US05/679,088 patent/US4023520A/en not_active Expired - Lifetime
- 1976-04-22 IT IT22532/76A patent/IT1059985B/it active
- 1976-04-27 JP JP51048370A patent/JPS594374B2/ja not_active Expired
- 1976-04-28 BE BE166537A patent/BE841241A/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE2518853C3 (de) | 1979-03-22 |
US4023520A (en) | 1977-05-17 |
DE2518853B2 (de) | 1978-07-20 |
DE2518853A1 (de) | 1976-11-04 |
JPS594374B2 (ja) | 1984-01-30 |
JPS51131429A (en) | 1976-11-15 |
IT1059985B (it) | 1982-06-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
BE841241A (fr) | Enceinte de reaction pour le depot de silicium elementaire | |
FR2309275A1 (fr) | Recipient de reaction revetu interieurement utilisable pour des polymerisations olefiniques | |
FR2324089A1 (fr) | Conteneur pour videodisque | |
FR2298988A1 (fr) | Housse amovible pour sieges | |
FR2322936A1 (fr) | Porte-substrat pour installation de depot sous vide | |
BE806148A (fr) | Enceinte de reaction pour le depot de matiere semi-conductrice sur des corps de support chauffes | |
BE813152A (fr) | Revetement pour substrats metalliques | |
ZA763606B (en) | Process for coating metals | |
JPS5217402A (en) | Process for preparing olefinic hydrocarbon | |
GB1553900A (en) | Microscope slide carrier | |
BR7508671A (pt) | Portador de metal | |
NL7605612A (nl) | Werkwijze ter bereiding van copolymeren van etheen. | |
FR2319177A1 (fr) | Revetement metallique ameliore pour videodisques | |
BE817066R (fr) | Enceinte de reaction pour le depot de matiere semi-concuctrice sur des corps de support chauffes | |
GB1554104A (en) | Refining liquid metal | |
JPS5211587A (en) | Carrying vessel | |
BE838227A (fr) | Dispositif pour le garnissage de hauts fourneaux | |
FR2334753A1 (fr) | Basculeur pour convertisseur basculant | |
FR2333024A1 (fr) | Substrats polymeres pour le depot de metaux par voie chimique | |
RO71343A (ro) | Instalatie pentru debitarea semifabricatelor metalice | |
IT1058025B (it) | Procedimento per l allontanamento di metalli da soluzioni | |
HK25482A (en) | Deposition of copper | |
JPS5265861A (en) | Substrate holder | |
FR2320207A1 (fr) | Dispositifs perfectionnes pour le basculement des bennes de vehicules | |
JPS529645A (en) | Process for selectively rusttproofing metallic substrate |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RE | Patent lapsed |
Owner name: SIEMENS A.G. Effective date: 19850428 |