BE810156A - Circuit integre comportant des transistors a effet de champ - Google Patents

Circuit integre comportant des transistors a effet de champ

Info

Publication number
BE810156A
BE810156A BE140172A BE140172A BE810156A BE 810156 A BE810156 A BE 810156A BE 140172 A BE140172 A BE 140172A BE 140172 A BE140172 A BE 140172A BE 810156 A BE810156 A BE 810156A
Authority
BE
Belgium
Prior art keywords
integrated circuit
circuit including
effect transistors
including field
field
Prior art date
Application number
BE140172A
Other languages
English (en)
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE810156A publication Critical patent/BE810156A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
BE140172A 1973-01-26 1974-01-25 Circuit integre comportant des transistors a effet de champ BE810156A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732303916 DE2303916A1 (de) 1973-01-26 1973-01-26 Integrierte schaltung mit feldeffekttransistoren

Publications (1)

Publication Number Publication Date
BE810156A true BE810156A (fr) 1974-05-16

Family

ID=5870074

Family Applications (1)

Application Number Title Priority Date Filing Date
BE140172A BE810156A (fr) 1973-01-26 1974-01-25 Circuit integre comportant des transistors a effet de champ

Country Status (12)

Country Link
JP (1) JPS49110281A (sv)
AT (1) AT339375B (sv)
BE (1) BE810156A (sv)
CA (1) CA1013482A (sv)
CH (1) CH564850A5 (sv)
DE (1) DE2303916A1 (sv)
FR (1) FR2215704B1 (sv)
GB (1) GB1413900A (sv)
IT (1) IT1007011B (sv)
LU (1) LU69236A1 (sv)
NL (1) NL7400934A (sv)
SE (1) SE385752B (sv)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5080783A (sv) * 1973-11-14 1975-07-01
JPS5810118B2 (ja) * 1974-08-28 1983-02-24 株式会社東芝 カイヘイブタ ノ アンゼンソウチ
US4016016A (en) * 1975-05-22 1977-04-05 Rca Corporation Method of simultaneously forming a polycrystalline silicon gate and a single crystal extension of said gate in silicon on sapphire MOS devices
JPS5610958A (en) * 1979-07-10 1981-02-03 Toshiba Corp Semiconductor circuit

Also Published As

Publication number Publication date
GB1413900A (en) 1975-11-12
CH564850A5 (sv) 1975-07-31
NL7400934A (sv) 1974-07-30
CA1013482A (en) 1977-07-05
DE2303916A1 (de) 1974-08-01
SE385752B (sv) 1976-07-19
IT1007011B (it) 1976-10-30
FR2215704B1 (sv) 1977-08-26
FR2215704A1 (sv) 1974-08-23
AT339375B (de) 1977-10-10
ATA1051373A (de) 1977-02-15
JPS49110281A (sv) 1974-10-21
LU69236A1 (sv) 1974-04-10

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