AT339375B - Integrierte dunnfilmschaltung mit feldeffekttransistoren - Google Patents

Integrierte dunnfilmschaltung mit feldeffekttransistoren

Info

Publication number
AT339375B
AT339375B AT1051373A AT1051373A AT339375B AT 339375 B AT339375 B AT 339375B AT 1051373 A AT1051373 A AT 1051373A AT 1051373 A AT1051373 A AT 1051373A AT 339375 B AT339375 B AT 339375B
Authority
AT
Austria
Prior art keywords
thin film
field effect
effect transistors
film circuit
integrated thin
Prior art date
Application number
AT1051373A
Other languages
German (de)
English (en)
Other versions
ATA1051373A (de
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of ATA1051373A publication Critical patent/ATA1051373A/de
Application granted granted Critical
Publication of AT339375B publication Critical patent/AT339375B/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
AT1051373A 1973-01-26 1973-12-14 Integrierte dunnfilmschaltung mit feldeffekttransistoren AT339375B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732303916 DE2303916A1 (de) 1973-01-26 1973-01-26 Integrierte schaltung mit feldeffekttransistoren

Publications (2)

Publication Number Publication Date
ATA1051373A ATA1051373A (de) 1977-02-15
AT339375B true AT339375B (de) 1977-10-10

Family

ID=5870074

Family Applications (1)

Application Number Title Priority Date Filing Date
AT1051373A AT339375B (de) 1973-01-26 1973-12-14 Integrierte dunnfilmschaltung mit feldeffekttransistoren

Country Status (12)

Country Link
JP (1) JPS49110281A (sv)
AT (1) AT339375B (sv)
BE (1) BE810156A (sv)
CA (1) CA1013482A (sv)
CH (1) CH564850A5 (sv)
DE (1) DE2303916A1 (sv)
FR (1) FR2215704B1 (sv)
GB (1) GB1413900A (sv)
IT (1) IT1007011B (sv)
LU (1) LU69236A1 (sv)
NL (1) NL7400934A (sv)
SE (1) SE385752B (sv)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5080783A (sv) * 1973-11-14 1975-07-01
JPS5810118B2 (ja) * 1974-08-28 1983-02-24 株式会社東芝 カイヘイブタ ノ アンゼンソウチ
US4016016A (en) * 1975-05-22 1977-04-05 Rca Corporation Method of simultaneously forming a polycrystalline silicon gate and a single crystal extension of said gate in silicon on sapphire MOS devices
JPS5610958A (en) * 1979-07-10 1981-02-03 Toshiba Corp Semiconductor circuit

Also Published As

Publication number Publication date
CA1013482A (en) 1977-07-05
LU69236A1 (sv) 1974-04-10
NL7400934A (sv) 1974-07-30
CH564850A5 (sv) 1975-07-31
GB1413900A (en) 1975-11-12
DE2303916A1 (de) 1974-08-01
BE810156A (fr) 1974-05-16
JPS49110281A (sv) 1974-10-21
FR2215704A1 (sv) 1974-08-23
FR2215704B1 (sv) 1977-08-26
IT1007011B (it) 1976-10-30
ATA1051373A (de) 1977-02-15
SE385752B (sv) 1976-07-19

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