BE796757A - Procede pour realiser des couches semi-conductrices sur un substrat - Google Patents
Procede pour realiser des couches semi-conductrices sur un substratInfo
- Publication number
- BE796757A BE796757A BE128783A BE128783A BE796757A BE 796757 A BE796757 A BE 796757A BE 128783 A BE128783 A BE 128783A BE 128783 A BE128783 A BE 128783A BE 796757 A BE796757 A BE 796757A
- Authority
- BE
- Belgium
- Prior art keywords
- substrate
- conducting layers
- making semi
- semi
- making
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
- H10P14/3411—Silicon, silicon germanium or germanium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2921—Materials being crystalline insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3202—Materials thereof
- H10P14/3204—Materials thereof being Group IVA semiconducting materials
- H10P14/3211—Silicon, silicon germanium or germanium
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2212295A DE2212295C3 (de) | 1972-03-14 | 1972-03-14 | Verfahren zur Herstellung von Silicium- oder Germanium-Epitaxialschichten |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE796757A true BE796757A (fr) | 1973-07-02 |
Family
ID=5838865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE128783A BE796757A (fr) | 1972-03-14 | 1973-03-14 | Procede pour realiser des couches semi-conductrices sur un substrat |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS5626137B2 (https=) |
| BE (1) | BE796757A (https=) |
| DE (1) | DE2212295C3 (https=) |
| FR (1) | FR2175840B1 (https=) |
| GB (1) | GB1386900A (https=) |
| IT (1) | IT981333B (https=) |
| LU (1) | LU67197A1 (https=) |
| NL (1) | NL7302014A (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4477308A (en) * | 1982-09-30 | 1984-10-16 | At&T Bell Laboratories | Heteroepitaxy of multiconstituent material by means of a _template layer |
| US7041170B2 (en) | 1999-09-20 | 2006-05-09 | Amberwave Systems Corporation | Method of producing high quality relaxed silicon germanium layers |
| JP4689969B2 (ja) | 2003-04-05 | 2011-06-01 | ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． | Ｉｖａ族およびｖｉａ族化合物の調製 |
| JP4954448B2 (ja) | 2003-04-05 | 2012-06-13 | ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． | 有機金属化合物 |
| JP4714422B2 (ja) | 2003-04-05 | 2011-06-29 | ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． | ゲルマニウムを含有するフィルムを堆積させる方法、及び蒸気送達装置 |
-
1972
- 1972-03-14 DE DE2212295A patent/DE2212295C3/de not_active Expired
-
1973
- 1973-01-15 GB GB201073A patent/GB1386900A/en not_active Expired
- 1973-02-13 NL NL7302014A patent/NL7302014A/xx unknown
- 1973-03-09 FR FR7308479A patent/FR2175840B1/fr not_active Expired
- 1973-03-12 LU LU67197A patent/LU67197A1/xx unknown
- 1973-03-13 IT IT21519/73A patent/IT981333B/it active
- 1973-03-14 JP JP2913773A patent/JPS5626137B2/ja not_active Expired
- 1973-03-14 BE BE128783A patent/BE796757A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB1386900A (en) | 1975-03-12 |
| DE2212295A1 (de) | 1973-09-27 |
| LU67197A1 (https=) | 1973-05-22 |
| DE2212295B2 (de) | 1974-08-15 |
| FR2175840B1 (https=) | 1977-07-29 |
| NL7302014A (https=) | 1973-09-18 |
| JPS5626137B2 (https=) | 1981-06-17 |
| JPS494976A (https=) | 1974-01-17 |
| DE2212295C3 (de) | 1975-04-17 |
| IT981333B (it) | 1974-10-10 |
| FR2175840A1 (https=) | 1973-10-26 |
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