BE796757A - Procede pour realiser des couches semi-conductrices sur un substrat - Google Patents

Procede pour realiser des couches semi-conductrices sur un substrat

Info

Publication number
BE796757A
BE796757A BE128783A BE128783A BE796757A BE 796757 A BE796757 A BE 796757A BE 128783 A BE128783 A BE 128783A BE 128783 A BE128783 A BE 128783A BE 796757 A BE796757 A BE 796757A
Authority
BE
Belgium
Prior art keywords
substrate
conducting layers
making semi
semi
making
Prior art date
Application number
BE128783A
Other languages
English (en)
French (fr)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of BE796757A publication Critical patent/BE796757A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
BE128783A 1972-03-14 1973-03-14 Procede pour realiser des couches semi-conductrices sur un substrat BE796757A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722212295 DE2212295C3 (de) 1972-03-14 1972-03-14 Verfahren zur Herstellung von Silicium- oder Germanium-Epitaxialschichten

Publications (1)

Publication Number Publication Date
BE796757A true BE796757A (fr) 1973-07-02

Family

ID=5838865

Family Applications (1)

Application Number Title Priority Date Filing Date
BE128783A BE796757A (fr) 1972-03-14 1973-03-14 Procede pour realiser des couches semi-conductrices sur un substrat

Country Status (8)

Country Link
JP (1) JPS5626137B2 (cs)
BE (1) BE796757A (cs)
DE (1) DE2212295C3 (cs)
FR (1) FR2175840B1 (cs)
GB (1) GB1386900A (cs)
IT (1) IT981333B (cs)
LU (1) LU67197A1 (cs)
NL (1) NL7302014A (cs)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4477308A (en) * 1982-09-30 1984-10-16 At&T Bell Laboratories Heteroepitaxy of multiconstituent material by means of a _template layer
US7041170B2 (en) 1999-09-20 2006-05-09 Amberwave Systems Corporation Method of producing high quality relaxed silicon germanium layers
JP4954448B2 (ja) 2003-04-05 2012-06-13 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 有機金属化合物
JP4689969B2 (ja) 2003-04-05 2011-06-01 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． Ｉｖａ族およびｖｉａ族化合物の調製
JP4714422B2 (ja) 2003-04-05 2011-06-29 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． ゲルマニウムを含有するフィルムを堆積させる方法、及び蒸気送達装置

Also Published As

Publication number Publication date
DE2212295B2 (de) 1974-08-15
DE2212295A1 (de) 1973-09-27
JPS5626137B2 (cs) 1981-06-17
LU67197A1 (cs) 1973-05-22
JPS494976A (cs) 1974-01-17
IT981333B (it) 1974-10-10
DE2212295C3 (de) 1975-04-17
FR2175840B1 (cs) 1977-07-29
FR2175840A1 (cs) 1973-10-26
NL7302014A (cs) 1973-09-18
GB1386900A (en) 1975-03-12

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