BE784592A - Procede de fabrication de barreaux semiconducteurs monocristallins, en particulier en silicium - Google Patents
Procede de fabrication de barreaux semiconducteurs monocristallins, en particulier en siliciumInfo
- Publication number
- BE784592A BE784592A BE784592A BE784592A BE784592A BE 784592 A BE784592 A BE 784592A BE 784592 A BE784592 A BE 784592A BE 784592 A BE784592 A BE 784592A BE 784592 A BE784592 A BE 784592A
- Authority
- BE
- Belgium
- Prior art keywords
- silicon
- manufacturing
- crystalline semiconductor
- semiconductor bars
- bars
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Silicon Compounds (AREA)
- General Induction Heating (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19712128506 DE2128506A1 (de) | 1971-06-08 | 1971-06-08 | Verfahren zum Herstellen von einkristallinen Halbleiterstäben, insbesondere aus Silicium, welche frei von Kristallversetzungen, insbesondere in Form von Swirls, sind |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE784592A true BE784592A (fr) | 1972-10-02 |
Family
ID=5810219
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE784592A BE784592A (fr) | 1971-06-08 | 1972-06-08 | Procede de fabrication de barreaux semiconducteurs monocristallins, en particulier en silicium |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS5523238B2 (enrdf_load_stackoverflow) |
| BE (1) | BE784592A (enrdf_load_stackoverflow) |
| CH (1) | CH566811A5 (enrdf_load_stackoverflow) |
| DE (1) | DE2128506A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2140423B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1346542A (enrdf_load_stackoverflow) |
| IT (1) | IT956185B (enrdf_load_stackoverflow) |
| NL (1) | NL7203338A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5852959B2 (ja) * | 1979-09-27 | 1983-11-26 | 電気化学工業株式会社 | 単結晶育成法 |
| US5185375A (en) * | 1987-12-18 | 1993-02-09 | May & Baker Limited | Thioformamide derivatives |
-
1971
- 1971-06-08 DE DE19712128506 patent/DE2128506A1/de active Pending
-
1972
- 1972-03-14 NL NL7203338A patent/NL7203338A/xx unknown
- 1972-03-16 CH CH390872A patent/CH566811A5/xx not_active IP Right Cessation
- 1972-04-26 JP JP4147972A patent/JPS5523238B2/ja not_active Expired
- 1972-05-17 GB GB2306372A patent/GB1346542A/en not_active Expired
- 1972-06-02 FR FR7219892A patent/FR2140423B1/fr not_active Expired
- 1972-06-07 IT IT2531372A patent/IT956185B/it active
- 1972-06-08 BE BE784592A patent/BE784592A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CH566811A5 (enrdf_load_stackoverflow) | 1975-09-30 |
| GB1346542A (enrdf_load_stackoverflow) | 1974-02-13 |
| FR2140423A1 (enrdf_load_stackoverflow) | 1973-01-19 |
| NL7203338A (enrdf_load_stackoverflow) | 1972-12-12 |
| JPS5523238B2 (enrdf_load_stackoverflow) | 1980-06-21 |
| DE2128506A1 (de) | 1972-12-14 |
| JPS4849379A (enrdf_load_stackoverflow) | 1973-07-12 |
| FR2140423B1 (enrdf_load_stackoverflow) | 1977-12-23 |
| IT956185B (it) | 1973-10-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| BE822852A (fr) | Dispositifs semi-conducteurs stabilises en procede de fabrication | |
| FR2280979A1 (fr) | Structure de semi-conducteur et procede de fabrication | |
| FR2276692A1 (fr) | Procede de fabrication de dispositifs semiconducteurs | |
| BE757296A (fr) | Element de support ou de traction, en particulier pour elingueset son procede de fabrication | |
| BE806098A (fr) | Procede de fabrication de silicium ou autre matiere semi-conductrice tres pure | |
| BE766395A (fr) | Procede de fabrication du 1,1-difluorethane, | |
| IT1022974B (it) | Processo perfezionato per la fabbricazione di dispositivi semiconduttori | |
| BE847618A (fr) | Procede de fabrication de barreaux monocristallins de silicium, | |
| BE816507A (fr) | Procede de fabrication de supports en silicium ou carbure de silicium pour processus de diffusion | |
| BE789534A (fr) | Procede de fabrication de silanes | |
| BE785287A (fr) | Procede de fabrication des conducteurs-poutres pour dispositifssemiconducteurs | |
| CH475367A (de) | Verfahren zum Herstellen von dünnen Schichten aus texturlosem, polykristallinem Silicium | |
| BE781368A (fr) | Procede de fabrication de capsules minuscules | |
| BE763537A (fr) | Procede de fabrication de pieces moulees en silicium | |
| BE792908A (fr) | Procede de fabrication de dispositifs semi-conducteurs | |
| BE803528A (fr) | Procede de fabrication de dispositifs semi-conducteurs | |
| BE769289A (fr) | Procede de fabrication de tetrafluorure de silicium | |
| BE788159A (fr) | Procede de decapage du nitrure de silicium | |
| BE776300A (fr) | Procede de fabrication de corps semi-conducteur polycristallins | |
| IT987430B (it) | Processo perfezionato per la fabbricazione di dispositivi semiconduttori | |
| BE797694A (fr) | Procede perfectionne de production de silicium elementaire polycristallin | |
| BE784592A (fr) | Procede de fabrication de barreaux semiconducteurs monocristallins, en particulier en silicium | |
| BE768643A (fr) | Procede de fabrication de gaufrettes semiconductrices ultraminces | |
| IT1022968B (it) | Procedimento perfezionato per la lavorazione di wafer semiconduttori | |
| BE605340A (fr) | Procédé de fabrication du silicium de grande pureté. |