BE784592A - PROCESS FOR THE MANUFACTURING OF SINGLE-CRYSTALLINE SEMICONDUCTOR BARS, IN PARTICULAR IN SILICON - Google Patents

PROCESS FOR THE MANUFACTURING OF SINGLE-CRYSTALLINE SEMICONDUCTOR BARS, IN PARTICULAR IN SILICON

Info

Publication number
BE784592A
BE784592A BE784592A BE784592A BE784592A BE 784592 A BE784592 A BE 784592A BE 784592 A BE784592 A BE 784592A BE 784592 A BE784592 A BE 784592A BE 784592 A BE784592 A BE 784592A
Authority
BE
Belgium
Prior art keywords
silicon
manufacturing
crystalline semiconductor
semiconductor bars
bars
Prior art date
Application number
BE784592A
Other languages
French (fr)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of BE784592A publication Critical patent/BE784592A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)
  • General Induction Heating (AREA)
BE784592A 1971-06-08 1972-06-08 PROCESS FOR THE MANUFACTURING OF SINGLE-CRYSTALLINE SEMICONDUCTOR BARS, IN PARTICULAR IN SILICON BE784592A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19712128506 DE2128506A1 (en) 1971-06-08 1971-06-08 Method for producing single-crystal semiconductor rods, in particular made of silicon, which are free from crystal dislocations, in particular in the form of swirls

Publications (1)

Publication Number Publication Date
BE784592A true BE784592A (en) 1972-10-02

Family

ID=5810219

Family Applications (1)

Application Number Title Priority Date Filing Date
BE784592A BE784592A (en) 1971-06-08 1972-06-08 PROCESS FOR THE MANUFACTURING OF SINGLE-CRYSTALLINE SEMICONDUCTOR BARS, IN PARTICULAR IN SILICON

Country Status (8)

Country Link
JP (1) JPS5523238B2 (en)
BE (1) BE784592A (en)
CH (1) CH566811A5 (en)
DE (1) DE2128506A1 (en)
FR (1) FR2140423B1 (en)
GB (1) GB1346542A (en)
IT (1) IT956185B (en)
NL (1) NL7203338A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5852959B2 (en) * 1979-09-27 1983-11-26 電気化学工業株式会社 Single crystal growth method
US5185375A (en) * 1987-12-18 1993-02-09 May & Baker Limited Thioformamide derivatives

Also Published As

Publication number Publication date
NL7203338A (en) 1972-12-12
JPS4849379A (en) 1973-07-12
JPS5523238B2 (en) 1980-06-21
DE2128506A1 (en) 1972-12-14
FR2140423B1 (en) 1977-12-23
FR2140423A1 (en) 1973-01-19
CH566811A5 (en) 1975-09-30
GB1346542A (en) 1974-02-13
IT956185B (en) 1973-10-10

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