BE778166A - Procede pour la fabrication d'une memoire - Google Patents

Procede pour la fabrication d'une memoire

Info

Publication number
BE778166A
BE778166A BE778166A BE778166A BE778166A BE 778166 A BE778166 A BE 778166A BE 778166 A BE778166 A BE 778166A BE 778166 A BE778166 A BE 778166A BE 778166 A BE778166 A BE 778166A
Authority
BE
Belgium
Prior art keywords
memory
making
Prior art date
Application number
BE778166A
Other languages
English (en)
French (fr)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of BE778166A publication Critical patent/BE778166A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/60Electrodes characterised by their materials
    • H10D64/66Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B20/00Read-only memory [ROM] devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • H10W74/43
BE778166A 1971-01-21 1972-01-18 Procede pour la fabrication d'une memoire BE778166A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2102854A DE2102854C3 (de) 1971-01-21 1971-01-21 Verfahren zur Herstellung eines Festwertspeichers

Publications (1)

Publication Number Publication Date
BE778166A true BE778166A (fr) 1972-05-16

Family

ID=5796572

Family Applications (1)

Application Number Title Priority Date Filing Date
BE778166A BE778166A (fr) 1971-01-21 1972-01-18 Procede pour la fabrication d'une memoire

Country Status (8)

Country Link
JP (1) JPS5716440B1 (enExample)
BE (1) BE778166A (enExample)
DE (1) DE2102854C3 (enExample)
FR (1) FR2122557B1 (enExample)
GB (1) GB1373996A (enExample)
IT (1) IT946699B (enExample)
LU (1) LU64616A1 (enExample)
NL (1) NL7115829A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4064495A (en) * 1976-03-22 1977-12-20 General Electric Company Ion implanted archival memory media and methods for storage of data therein
DE3036869C2 (de) * 1979-10-01 1985-09-05 Hitachi, Ltd., Tokio/Tokyo Integrierte Halbleiterschaltung und Schaltkreisaktivierverfahren
US4476478A (en) * 1980-04-24 1984-10-09 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor read only memory and method of making the same
FR2551247B1 (fr) * 1983-08-23 1988-06-17 Rosencher Emmanuel Memoire integree non volatile reinscriptible, procede de fabrication de cette memoire et dispositif d'ecriture dans celle-ci

Also Published As

Publication number Publication date
JPS5716440B1 (enExample) 1982-04-05
GB1373996A (en) 1974-11-13
FR2122557A1 (enExample) 1972-09-01
LU64616A1 (enExample) 1972-06-26
IT946699B (it) 1973-05-21
NL7115829A (enExample) 1972-07-25
FR2122557B1 (enExample) 1976-07-09
DE2102854C3 (de) 1973-10-11
DE2102854A1 (de) 1972-08-03
DE2102854B2 (de) 1973-03-15

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