GB1373996A - Method of manufacturing a fixed value store - Google Patents

Method of manufacturing a fixed value store

Info

Publication number
GB1373996A
GB1373996A GB283272A GB283272A GB1373996A GB 1373996 A GB1373996 A GB 1373996A GB 283272 A GB283272 A GB 283272A GB 283272 A GB283272 A GB 283272A GB 1373996 A GB1373996 A GB 1373996A
Authority
GB
United Kingdom
Prior art keywords
devices
rays
fixed value
jan
value store
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB283272A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1373996A publication Critical patent/GB1373996A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

1373996 Semi-conductor devices SIEMENS AG 20 Jan 1972 [21 Jan 1971] 2832/72 Heading H1K A fixed value store comprises a plurality of MIS devices which are programmed by the selective application of corpuscular rays, gamma rays or X-rays to adjust the number of charges and/or the charge distribution in the insulating layer and/or at the boundary face between the substrate and insulating layer. The devices may be IGFETs the characteristics of which are selectively adjusted by a radiation treatment which may be performed before or after applying the gate electrodes. Electrons or ions may be implanted into the gate oxide of selected devices by using an electric or magnetic deflection system controlled by a computer to produce the desired stored programme. The programmable devices may also be MIS capacitors. Addressing and reading circuitry may be integrated with the programmable devices.
GB283272A 1971-01-21 1972-01-20 Method of manufacturing a fixed value store Expired GB1373996A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2102854A DE2102854C3 (en) 1971-01-21 1971-01-21 Method for producing a read-only memory

Publications (1)

Publication Number Publication Date
GB1373996A true GB1373996A (en) 1974-11-13

Family

ID=5796572

Family Applications (1)

Application Number Title Priority Date Filing Date
GB283272A Expired GB1373996A (en) 1971-01-21 1972-01-20 Method of manufacturing a fixed value store

Country Status (8)

Country Link
JP (1) JPS5716440B1 (en)
BE (1) BE778166A (en)
DE (1) DE2102854C3 (en)
FR (1) FR2122557B1 (en)
GB (1) GB1373996A (en)
IT (1) IT946699B (en)
LU (1) LU64616A1 (en)
NL (1) NL7115829A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4064495A (en) * 1976-03-22 1977-12-20 General Electric Company Ion implanted archival memory media and methods for storage of data therein
DE3036869C2 (en) * 1979-10-01 1985-09-05 Hitachi, Ltd., Tokio/Tokyo Semiconductor integrated circuit and circuit activation method
US4476478A (en) * 1980-04-24 1984-10-09 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor read only memory and method of making the same
FR2551247B1 (en) * 1983-08-23 1988-06-17 Rosencher Emmanuel NON-VOLATILE INTEGRATED REWRITE MEMORY, MANUFACTURING METHOD THEREOF AND WRITING DEVICE THEREIN

Also Published As

Publication number Publication date
LU64616A1 (en) 1972-06-26
FR2122557B1 (en) 1976-07-09
NL7115829A (en) 1972-07-25
FR2122557A1 (en) 1972-09-01
BE778166A (en) 1972-05-16
DE2102854C3 (en) 1973-10-11
IT946699B (en) 1973-05-21
JPS5716440B1 (en) 1982-04-05
DE2102854B2 (en) 1973-03-15
DE2102854A1 (en) 1972-08-03

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee