FR2551247B1 - NON-VOLATILE INTEGRATED REWRITE MEMORY, MANUFACTURING METHOD THEREOF AND WRITING DEVICE THEREIN - Google Patents

NON-VOLATILE INTEGRATED REWRITE MEMORY, MANUFACTURING METHOD THEREOF AND WRITING DEVICE THEREIN

Info

Publication number
FR2551247B1
FR2551247B1 FR8313593A FR8313593A FR2551247B1 FR 2551247 B1 FR2551247 B1 FR 2551247B1 FR 8313593 A FR8313593 A FR 8313593A FR 8313593 A FR8313593 A FR 8313593A FR 2551247 B1 FR2551247 B1 FR 2551247B1
Authority
FR
France
Prior art keywords
manufacturing
writing device
volatile integrated
rewrite memory
rewrite
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8313593A
Other languages
French (fr)
Other versions
FR2551247A1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to FR8313593A priority Critical patent/FR2551247B1/en
Publication of FR2551247A1 publication Critical patent/FR2551247A1/en
Application granted granted Critical
Publication of FR2551247B1 publication Critical patent/FR2551247B1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
FR8313593A 1983-08-23 1983-08-23 NON-VOLATILE INTEGRATED REWRITE MEMORY, MANUFACTURING METHOD THEREOF AND WRITING DEVICE THEREIN Expired FR2551247B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8313593A FR2551247B1 (en) 1983-08-23 1983-08-23 NON-VOLATILE INTEGRATED REWRITE MEMORY, MANUFACTURING METHOD THEREOF AND WRITING DEVICE THEREIN

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8313593A FR2551247B1 (en) 1983-08-23 1983-08-23 NON-VOLATILE INTEGRATED REWRITE MEMORY, MANUFACTURING METHOD THEREOF AND WRITING DEVICE THEREIN

Publications (2)

Publication Number Publication Date
FR2551247A1 FR2551247A1 (en) 1985-03-01
FR2551247B1 true FR2551247B1 (en) 1988-06-17

Family

ID=9291761

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8313593A Expired FR2551247B1 (en) 1983-08-23 1983-08-23 NON-VOLATILE INTEGRATED REWRITE MEMORY, MANUFACTURING METHOD THEREOF AND WRITING DEVICE THEREIN

Country Status (1)

Country Link
FR (1) FR2551247B1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6140157A (en) * 1998-08-05 2000-10-31 Sandia Corporation Memory device using movement of protons

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2102854C3 (en) * 1971-01-21 1973-10-11 Siemens Ag, 1000 Berlin U. 8000 Muenchen Method for producing a read-only memory
US4272303A (en) * 1978-06-05 1981-06-09 Texas Instruments Incorporated Method of making post-metal ion beam programmable MOS read only memory

Also Published As

Publication number Publication date
FR2551247A1 (en) 1985-03-01

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Legal Events

Date Code Title Description
ST Notification of lapse