JPS5538067A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5538067A
JPS5538067A JP11189478A JP11189478A JPS5538067A JP S5538067 A JPS5538067 A JP S5538067A JP 11189478 A JP11189478 A JP 11189478A JP 11189478 A JP11189478 A JP 11189478A JP S5538067 A JPS5538067 A JP S5538067A
Authority
JP
Japan
Prior art keywords
gate insulating
threshold value
mos transistors
insulating film
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11189478A
Other languages
Japanese (ja)
Inventor
Naotake Tadama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP11189478A priority Critical patent/JPS5538067A/en
Publication of JPS5538067A publication Critical patent/JPS5538067A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE: To finish a thickness control process of the gate insulating films of MOS transistors only once, and to shorten days necessary up to forwarding, by irradiating radiation to the gate insulating films, and by writing information in a memory cell exclusive for reading.
CONSTITUTION: Field oxide films 2, a source region 3, a drain region 4 and a gate insulating film 5 are formed to a semiconductor substrate 1, and threshold value voltage is adjusted by injecting boron ions to a channel region. A contact hole is made up, and a source electrode 6 in aluminum, a drain electrode 7 and a gate electrode 8 are built up. The substrate 1, to which a plurality of MOS transistors are formed, is installed into an electron ray drawing device, electron rays are irradiated to a fixed transistor, positive interfacial electric charge is accumlated to the gate insulating film, the threshold value voltage is changed and information is written in.
COPYRIGHT: (C)1980,JPO&Japio
JP11189478A 1978-09-12 1978-09-12 Semiconductor device Pending JPS5538067A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11189478A JPS5538067A (en) 1978-09-12 1978-09-12 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11189478A JPS5538067A (en) 1978-09-12 1978-09-12 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5538067A true JPS5538067A (en) 1980-03-17

Family

ID=14572796

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11189478A Pending JPS5538067A (en) 1978-09-12 1978-09-12 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5538067A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6249632A (en) * 1985-08-28 1987-03-04 Nec Corp Manufacture of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4835729A (en) * 1971-09-10 1973-05-26

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4835729A (en) * 1971-09-10 1973-05-26

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6249632A (en) * 1985-08-28 1987-03-04 Nec Corp Manufacture of semiconductor device

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