JPS5538067A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5538067A JPS5538067A JP11189478A JP11189478A JPS5538067A JP S5538067 A JPS5538067 A JP S5538067A JP 11189478 A JP11189478 A JP 11189478A JP 11189478 A JP11189478 A JP 11189478A JP S5538067 A JPS5538067 A JP S5538067A
- Authority
- JP
- Japan
- Prior art keywords
- gate insulating
- threshold value
- mos transistors
- insulating film
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
PURPOSE: To finish a thickness control process of the gate insulating films of MOS transistors only once, and to shorten days necessary up to forwarding, by irradiating radiation to the gate insulating films, and by writing information in a memory cell exclusive for reading.
CONSTITUTION: Field oxide films 2, a source region 3, a drain region 4 and a gate insulating film 5 are formed to a semiconductor substrate 1, and threshold value voltage is adjusted by injecting boron ions to a channel region. A contact hole is made up, and a source electrode 6 in aluminum, a drain electrode 7 and a gate electrode 8 are built up. The substrate 1, to which a plurality of MOS transistors are formed, is installed into an electron ray drawing device, electron rays are irradiated to a fixed transistor, positive interfacial electric charge is accumlated to the gate insulating film, the threshold value voltage is changed and information is written in.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11189478A JPS5538067A (en) | 1978-09-12 | 1978-09-12 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11189478A JPS5538067A (en) | 1978-09-12 | 1978-09-12 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5538067A true JPS5538067A (en) | 1980-03-17 |
Family
ID=14572796
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11189478A Pending JPS5538067A (en) | 1978-09-12 | 1978-09-12 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5538067A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6249632A (en) * | 1985-08-28 | 1987-03-04 | Nec Corp | Manufacture of semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4835729A (en) * | 1971-09-10 | 1973-05-26 |
-
1978
- 1978-09-12 JP JP11189478A patent/JPS5538067A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4835729A (en) * | 1971-09-10 | 1973-05-26 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6249632A (en) * | 1985-08-28 | 1987-03-04 | Nec Corp | Manufacture of semiconductor device |
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