JPS5716440B1 - - Google Patents
Info
- Publication number
- JPS5716440B1 JPS5716440B1 JP824872A JP824872A JPS5716440B1 JP S5716440 B1 JPS5716440 B1 JP S5716440B1 JP 824872 A JP824872 A JP 824872A JP 824872 A JP824872 A JP 824872A JP S5716440 B1 JPS5716440 B1 JP S5716440B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H10W74/43—
Landscapes
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2102854A DE2102854C3 (de) | 1971-01-21 | 1971-01-21 | Verfahren zur Herstellung eines Festwertspeichers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5716440B1 true JPS5716440B1 (enExample) | 1982-04-05 |
Family
ID=5796572
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP824872A Pending JPS5716440B1 (enExample) | 1971-01-21 | 1972-01-21 |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS5716440B1 (enExample) |
| BE (1) | BE778166A (enExample) |
| DE (1) | DE2102854C3 (enExample) |
| FR (1) | FR2122557B1 (enExample) |
| GB (1) | GB1373996A (enExample) |
| IT (1) | IT946699B (enExample) |
| LU (1) | LU64616A1 (enExample) |
| NL (1) | NL7115829A (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4064495A (en) * | 1976-03-22 | 1977-12-20 | General Electric Company | Ion implanted archival memory media and methods for storage of data therein |
| DE3036869C2 (de) * | 1979-10-01 | 1985-09-05 | Hitachi, Ltd., Tokio/Tokyo | Integrierte Halbleiterschaltung und Schaltkreisaktivierverfahren |
| US4476478A (en) * | 1980-04-24 | 1984-10-09 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor read only memory and method of making the same |
| FR2551247B1 (fr) * | 1983-08-23 | 1988-06-17 | Rosencher Emmanuel | Memoire integree non volatile reinscriptible, procede de fabrication de cette memoire et dispositif d'ecriture dans celle-ci |
-
1971
- 1971-01-21 DE DE2102854A patent/DE2102854C3/de not_active Expired
- 1971-11-17 NL NL7115829A patent/NL7115829A/xx unknown
-
1972
- 1972-01-18 BE BE778166A patent/BE778166A/xx unknown
- 1972-01-19 LU LU64616D patent/LU64616A1/xx unknown
- 1972-01-19 IT IT19534/72A patent/IT946699B/it active
- 1972-01-20 FR FR7201923A patent/FR2122557B1/fr not_active Expired
- 1972-01-20 GB GB283272A patent/GB1373996A/en not_active Expired
- 1972-01-21 JP JP824872A patent/JPS5716440B1/ja active Pending
Non-Patent Citations (1)
| Title |
|---|
| PROCEEDINGS OF THE IEEE#V56#N2#M2=1968 * |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1373996A (en) | 1974-11-13 |
| FR2122557A1 (enExample) | 1972-09-01 |
| LU64616A1 (enExample) | 1972-06-26 |
| IT946699B (it) | 1973-05-21 |
| NL7115829A (enExample) | 1972-07-25 |
| FR2122557B1 (enExample) | 1976-07-09 |
| DE2102854C3 (de) | 1973-10-11 |
| DE2102854A1 (de) | 1972-08-03 |
| BE778166A (fr) | 1972-05-16 |
| DE2102854B2 (de) | 1973-03-15 |