BE667284A - - Google Patents

Info

Publication number
BE667284A
BE667284A BE667284DA BE667284A BE 667284 A BE667284 A BE 667284A BE 667284D A BE667284D A BE 667284DA BE 667284 A BE667284 A BE 667284A
Authority
BE
Belgium
Prior art keywords
solenoids
solenoid
switch
magnetic
constant current
Prior art date
Application number
Other languages
English (en)
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE667284A publication Critical patent/BE667284A/fr

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store

Landscapes

  • Digital Magnetic Recording (AREA)
BE667284D 1964-07-28 1965-07-23 BE667284A (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US38567764A 1964-07-28 1964-07-28
US38572264A 1964-07-28 1964-07-28
US39872564A 1964-09-23 1964-09-23

Publications (1)

Publication Number Publication Date
BE667284A true BE667284A (de) 1966-01-24

Family

ID=27409725

Family Applications (1)

Application Number Title Priority Date Filing Date
BE667284D BE667284A (de) 1964-07-28 1965-07-23

Country Status (1)

Country Link
BE (1) BE667284A (de)

Similar Documents

Publication Publication Date Title
US6781871B2 (en) Magnetic random access memory and method of operating the same
US9646682B1 (en) Reciprocal quantum logic (RQL) sense amplifier
US6625076B2 (en) Circuit configuration fir evaluating the information content of a memory cell
KR101123925B1 (ko) 판독 동작 수행 방법 및 시스템
JP4431265B2 (ja) メモリセル抵抗状態感知回路およびメモリセル抵抗状態感知方法
US6185143B1 (en) Magnetic random access memory (MRAM) device including differential sense amplifiers
TW459227B (en) Magnetic random access memory with a reference memory array
US6700813B2 (en) Magnetic memory and driving method therefor
US20090175110A1 (en) Non-volatile memory element and method of operation therefor
JP4969999B2 (ja) 磁気記憶装置
US3209337A (en) Magnetic matrix memory system
US6208550B1 (en) Ferroelectric memory device and method for operating thereof
US20050195644A1 (en) Magnetoresistive random access memory and driving method thereof
BE667284A (de)
CN111128265B (zh) 磁性隧道结读取电路、装置以及读取磁性隧道结的方法
US5293278A (en) Circuit for selectively switching read signals from a multiple magnetic head into a memory
FR2471004A1 (fr) Installation et dispositif de controle de l'acces a une memoire electronique
US6816431B1 (en) Magnetic random access memory using memory cells with rotated magnetic storage elements
KR100521527B1 (ko) Mram 반도체 메모리 장치를 동작시키는 방법
US3295115A (en) Thin magnetic film memory system
CN108701478A (zh) 存储设备、信息处理装置和存储设备控制方法
FR2605447A1 (fr) Memoire non volatile programmable electriquement
JP2004006861A (ja) 寄生電流を低減した磁気ランダムアクセスメモリ
KR101704929B1 (ko) 센싱 마진을 향상시키는 메모리 셀 읽기 회로
US7006374B2 (en) Magnetic memory device and method of reading information