BE638316A - - Google Patents

Info

Publication number
BE638316A
BE638316A BE638316DA BE638316A BE 638316 A BE638316 A BE 638316A BE 638316D A BE638316D A BE 638316DA BE 638316 A BE638316 A BE 638316A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE638316A publication Critical patent/BE638316A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7838—Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
BE638316D 1962-10-15 BE638316A (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US230449A US3283221A (en) 1962-10-15 1962-10-15 Field effect transistor

Publications (1)

Publication Number Publication Date
BE638316A true BE638316A (ko)

Family

ID=22865266

Family Applications (1)

Application Number Title Priority Date Filing Date
BE638316D BE638316A (ko) 1962-10-15

Country Status (8)

Country Link
US (1) US3283221A (ko)
AT (1) AT245626B (ko)
BE (1) BE638316A (ko)
CH (1) CH441509A (ko)
DE (1) DE1283399B (ko)
ES (1) ES292458A1 (ko)
GB (1) GB1060731A (ko)
NL (1) NL299194A (ko)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3335038A (en) * 1964-03-30 1967-08-08 Ibm Methods of producing single crystals on polycrystalline substrates and devices using same
BE666834A (ko) * 1964-07-13
US3375419A (en) * 1965-02-25 1968-03-26 Union Carbide Corp Field effect transistor with poly-p-xylylene insulated gate structure and method
US3378737A (en) * 1965-06-28 1968-04-16 Teledyne Inc Buried channel field effect transistor and method of forming
US3459944A (en) * 1966-01-04 1969-08-05 Ibm Photosensitive insulated gate field effect transistor
US3458798A (en) * 1966-09-15 1969-07-29 Ibm Solid state rectifying circuit arrangements
US3461323A (en) * 1968-02-08 1969-08-12 Bendix Corp Negative resistance semiconductor device
US3593070A (en) * 1968-12-17 1971-07-13 Texas Instruments Inc Submount for semiconductor assembly
US3591852A (en) * 1969-01-21 1971-07-06 Gen Electric Nonvolatile field effect transistor counter
US3967305A (en) * 1969-03-27 1976-06-29 Mcdonnell Douglas Corporation Multichannel junction field-effect transistor and process
JPS4915668B1 (ko) * 1969-04-15 1974-04-16
US3648127A (en) * 1970-09-28 1972-03-07 Fairchild Camera Instr Co Reach through or punch{13 through breakdown for gate protection in mos devices
US3914137A (en) * 1971-10-06 1975-10-21 Motorola Inc Method of manufacturing a light coupled monolithic circuit by selective epitaxial deposition
US4021835A (en) * 1974-01-25 1977-05-03 Hitachi, Ltd. Semiconductor device and a method for fabricating the same
US4065781A (en) * 1974-06-21 1977-12-27 Westinghouse Electric Corporation Insulated-gate thin film transistor with low leakage current
US4000504A (en) * 1975-05-12 1976-12-28 Hewlett-Packard Company Deep channel MOS transistor
US4132998A (en) * 1977-08-29 1979-01-02 Rca Corp. Insulated gate field effect transistor having a deep channel portion more highly doped than the substrate
JPS6019152B2 (ja) * 1977-08-31 1985-05-14 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン 電界効果トランジスタ
US4166223A (en) * 1978-02-06 1979-08-28 Westinghouse Electric Corp. Dual field effect transistor structure for compensating effects of threshold voltage
NL7904200A (nl) * 1979-05-29 1980-12-02 Philips Nv Lagenveldeffecttransistor.
GB2140617B (en) * 1980-03-03 1985-06-19 Raytheon Co Methods of forming a field effect transistor
US4523368A (en) * 1980-03-03 1985-06-18 Raytheon Company Semiconductor devices and manufacturing methods
JPS58188165A (ja) * 1982-04-28 1983-11-02 Nec Corp 半導体装置
US4575746A (en) * 1983-11-28 1986-03-11 Rca Corporation Crossunders for high density SOS integrated circuits
JPS62128175A (ja) * 1985-11-29 1987-06-10 Hitachi Ltd 半導体装置
GB2233822A (en) * 1989-07-12 1991-01-16 Philips Electronic Associated A thin film field effect transistor
KR20060078925A (ko) * 2004-12-30 2006-07-05 동부일렉트로닉스 주식회사 전류의 제어가 정반대인 금속 산화물 반도체 트랜지스터

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1900018A (en) * 1928-03-28 1933-03-07 Lilienfeld Julius Edgar Device for controlling electric current
FR1037293A (fr) * 1951-05-19 1953-09-15 Licentia Gmbh Redresseur sec à contrôle électrique et son procédé de fabrication
US2756285A (en) * 1951-08-24 1956-07-24 Bell Telephone Labor Inc Semiconductor signal translating devices
US2791759A (en) * 1955-02-18 1957-05-07 Bell Telephone Labor Inc Semiconductive device
US2993998A (en) * 1955-06-09 1961-07-25 Sprague Electric Co Transistor combinations
US2900531A (en) * 1957-02-28 1959-08-18 Rca Corp Field-effect transistor
US2979427A (en) * 1957-03-18 1961-04-11 Shockley William Semiconductor device and method of making the same
NL237225A (ko) * 1958-03-19
NL245195A (ko) * 1958-12-11
FR1293699A (fr) * 1960-05-02 1962-05-18 Westinghouse Electric Corp Dispositif semi-conducteur
FR1306187A (fr) * 1960-09-26 1962-10-13 Westinghouse Electric Corp Transistor unipolaire
NL293447A (ko) * 1962-05-31

Also Published As

Publication number Publication date
CH441509A (de) 1967-08-15
US3283221A (en) 1966-11-01
NL299194A (ko)
DE1283399B (de) 1968-11-21
AT245626B (de) 1966-03-10
GB1060731A (en) 1967-03-08
ES292458A1 (es) 1964-04-01

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