BE632998A - - Google Patents

Info

Publication number
BE632998A
BE632998A BE632998DA BE632998A BE 632998 A BE632998 A BE 632998A BE 632998D A BE632998D A BE 632998DA BE 632998 A BE632998 A BE 632998A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE632998A publication Critical patent/BE632998A/xx

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
BE632998D 1962-05-31 BE632998A (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US198923A US3191061A (en) 1962-05-31 1962-05-31 Insulated gate field effect devices and electrical circuits employing such devices

Publications (1)

Publication Number Publication Date
BE632998A true BE632998A (ko)

Family

ID=22735462

Family Applications (1)

Application Number Title Priority Date Filing Date
BE632998D BE632998A (ko) 1962-05-31

Country Status (8)

Country Link
US (1) US3191061A (ko)
JP (4) JPS4830188B1 (ko)
BE (1) BE632998A (ko)
DE (1) DE1234856B (ko)
FR (1) FR1366856A (ko)
GB (1) GB1037519A (ko)
NL (2) NL141707B (ko)
SE (2) SE325310B (ko)

Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL290035A (ko) * 1962-03-12
BE638316A (ko) * 1962-10-15
US3320464A (en) * 1963-05-06 1967-05-16 Hughes Aircraft Co Inverted solid state triode and tetrode devices
US3327133A (en) * 1963-05-28 1967-06-20 Rca Corp Electronic switching
US3311756A (en) * 1963-06-24 1967-03-28 Hitachi Seisakusho Tokyoto Kk Electronic circuit having a fieldeffect transistor therein
US3293512A (en) * 1963-09-20 1966-12-20 Burroughs Corp Thin film, solid state amplifier with source and drain on opposite sides of the semiconductor layer
US3265981A (en) * 1963-12-02 1966-08-09 Hughes Aircraft Co Thin-film electrical networks with nonresistive feedback arrangement
US3292008A (en) * 1963-12-03 1966-12-13 Rca Corp Switching circuit having low standby power dissipation
US3289054A (en) * 1963-12-26 1966-11-29 Ibm Thin film transistor and method of fabrication
US3290569A (en) * 1964-02-14 1966-12-06 Rca Corp Tellurium thin film field effect solid state electrical devices
US3296547A (en) * 1964-03-31 1967-01-03 Ii Louis Sickles Insulated gate field effect transistor gate return
US3316494A (en) * 1964-05-04 1967-04-25 Gen Telephone & Elect Semiconductor microwave power detector
US3298863A (en) * 1964-05-08 1967-01-17 Joseph H Mccusker Method for fabricating thin film transistors
US3309534A (en) * 1964-07-22 1967-03-14 Edwin K C Yu Bistable flip-flop employing insulated gate field effect transistors
US3355721A (en) * 1964-08-25 1967-11-28 Rca Corp Information storage
US3313988A (en) * 1964-08-31 1967-04-11 Gen Dynamics Corp Field effect semiconductor device and method of forming same
US3369159A (en) * 1964-12-21 1968-02-13 Texas Instruments Inc Printed transistors and methods of making same
US3363115A (en) * 1965-03-29 1968-01-09 Gen Micro Electronics Inc Integral counting circuit with storage capacitors in the conductive path of steering gate circuits
US3331998A (en) * 1965-04-12 1967-07-18 Hughes Aircraft Co Thin film heterojunction device
US3445732A (en) * 1965-06-28 1969-05-20 Ledex Inc Field effect device having an electrolytically insulated gate
US3351786A (en) * 1965-08-06 1967-11-07 Univ California Piezoelectric-semiconductor, electromechanical transducer
US3414740A (en) * 1965-09-08 1968-12-03 Ibm Integrated insulated gate field effect logic circuitry
US3539839A (en) * 1966-01-31 1970-11-10 Nippon Electric Co Semiconductor memory device
US3764864A (en) * 1966-03-29 1973-10-09 Matsushita Electronics Corp Insulated-gate field-effect transistor with punch-through effect element
US3313959A (en) * 1966-08-08 1967-04-11 Hughes Aircraft Co Thin-film resonance device
US3336486A (en) * 1966-09-06 1967-08-15 Energy Conversion Devices Inc Control system having multiple electrode current controlling device
US3473094A (en) * 1967-08-02 1969-10-14 Rca Corp Integrated arrangement for integrated circuit structures
US3533087A (en) * 1967-09-15 1970-10-06 Rca Corp Memory employing transistor storage cells
US3564135A (en) * 1967-10-12 1971-02-16 Rca Corp Integrated display panel utilizing field-effect transistors
GB1240110A (en) * 1967-12-14 1971-07-21 Plessey Co Ltd Improvements in or relating to switching circuits
FR1563879A (ko) * 1968-02-09 1969-04-18
DE1924208C3 (de) * 1969-05-12 1982-08-12 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Integrierte Halbleiterschaltung
US3646371A (en) * 1969-07-25 1972-02-29 Us Army Integrated timer with nonvolatile memory
US3654496A (en) * 1970-04-30 1972-04-04 Us Army Electric timer with nonvolatile memory
US3654499A (en) * 1970-06-24 1972-04-04 Bell Telephone Labor Inc Charge coupled memory with storage sites
US3706978A (en) * 1971-11-11 1972-12-19 Ibm Functional storage array
US3728556A (en) * 1971-11-24 1973-04-17 United Aircraft Corp Regenerative fet converter circuitry
US3974515A (en) * 1974-09-12 1976-08-10 Rca Corporation IGFET on an insulating substrate
JPS5252582A (en) * 1975-10-25 1977-04-27 Toshiba Corp Device and production for semiconductor
US4204217A (en) * 1976-10-18 1980-05-20 Rca Corporation Transistor using liquid crystal
US4169746A (en) * 1977-04-28 1979-10-02 Rca Corp. Method for making silicon on sapphire transistor utilizing predeposition of leads
US4422090A (en) * 1979-07-25 1983-12-20 Northern Telecom Limited Thin film transistors
JPS6055914B2 (ja) * 1979-10-19 1985-12-07 株式会社東芝 半導体記憶装置
JPS5681799U (ko) * 1979-11-27 1981-07-02
JPS5713777A (en) * 1980-06-30 1982-01-23 Shunpei Yamazaki Semiconductor device and manufacture thereof
US5091334A (en) * 1980-03-03 1992-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US5262350A (en) * 1980-06-30 1993-11-16 Semiconductor Energy Laboratory Co., Ltd. Forming a non single crystal semiconductor layer by using an electric current
US6900463B1 (en) 1980-06-30 2005-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US5859443A (en) * 1980-06-30 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
GB2118774B (en) * 1982-02-25 1985-11-27 Sharp Kk Insulated gate thin film transistor
JPS58197775A (ja) * 1982-05-13 1983-11-17 Canon Inc 薄膜トランジスタ
US4862237A (en) * 1983-01-10 1989-08-29 Seiko Epson Corporation Solid state image sensor
US4633284A (en) * 1983-11-08 1986-12-30 Energy Conversion Devices, Inc. Thin film transistor having an annealed gate oxide and method of making same
US4727044A (en) 1984-05-18 1988-02-23 Semiconductor Energy Laboratory Co., Ltd. Method of making a thin film transistor with laser recrystallized source and drain
US4609889A (en) * 1984-07-13 1986-09-02 Rca Corporation Microwave frequency power combiner
GB2173037A (en) * 1985-03-29 1986-10-01 Philips Electronic Associated Semiconductor devices employing conductivity modulation
US4862243A (en) * 1987-06-01 1989-08-29 Texas Instruments Incorporated Scalable fuse link element
JPH01220021A (ja) * 1988-02-29 1989-09-01 Takara Co Ltd 入出力装置
US20070178710A1 (en) * 2003-08-18 2007-08-02 3M Innovative Properties Company Method for sealing thin film transistors

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3040266A (en) * 1958-06-16 1962-06-19 Union Carbide Corp Surface field effect transistor amplifier
FR1256116A (fr) * 1959-02-06 1961-03-17 Texas Instruments Inc Nouveaux circuits électroniques miniatures et procédés pour leur fabrication
US3115581A (en) * 1959-05-06 1963-12-24 Texas Instruments Inc Miniature semiconductor integrated circuit
US3134912A (en) * 1960-05-02 1964-05-26 Texas Instruments Inc Multivibrator employing field effect devices as transistors and voltage variable resistors in integrated semiconductive structure
NL264274A (ko) * 1960-05-02 1900-01-01
US3190061A (en) * 1963-11-04 1965-06-22 John E Gilbertson Lawnmower device
JPS4830188A (ko) * 1971-08-23 1973-04-20

Also Published As

Publication number Publication date
JPS542055B1 (ko) 1979-02-01
JPS4823703B1 (ko) 1973-07-16
NL141707B (nl) 1974-03-15
NL293447A (ko)
SE356185B (ko) 1973-05-14
SE325310B (ko) 1970-06-29
FR1366856A (fr) 1964-07-17
JPS5623021A (en) 1981-03-04
US3191061A (en) 1965-06-22
GB1037519A (en) 1966-07-27
JPS4830188B1 (ko) 1973-09-18
DE1234856B (de) 1967-02-23

Similar Documents

Publication Publication Date Title
BE616548R (ko)
BE618389A (ko)
BE592434A (ko)
BE380301A (ko)
BE489310A (ko)
BE638316A (ko)
BE538831A (ko)
BE541929A (ko)
BE553896A (ko)
BE559145A (ko)
BE586180A (ko)
BE620937A (ko)
BE599783A (ko)
BE604335A (ko)
BE608197A (ko)
BE609543A (ko)
BE612190A (ko)
BE612311A (ko)
BE612464A (ko)
BE612847A (ko)
BE612926A (ko)
BE613108A (ko)
BE613190A (ko)
BE613298A (ko)
BE613319A (ko)