BE610603A - Procédé de fabrication d'un monocristal de silicium, exempt de dislocations, par la méthode de la fusion par zone sans creuset - Google Patents

Procédé de fabrication d'un monocristal de silicium, exempt de dislocations, par la méthode de la fusion par zone sans creuset

Info

Publication number
BE610603A
BE610603A BE610603A BE610603A BE610603A BE 610603 A BE610603 A BE 610603A BE 610603 A BE610603 A BE 610603A BE 610603 A BE610603 A BE 610603A BE 610603 A BE610603 A BE 610603A
Authority
BE
Belgium
Prior art keywords
free
dislocations
crucible
silicon
manufacturing
Prior art date
Application number
BE610603A
Other languages
English (en)
French (fr)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of BE610603A publication Critical patent/BE610603A/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
    • H01H85/02—Details
    • H01H85/38—Means for extinguishing or suppressing arc
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
    • H01H85/02—Details
    • H01H85/38—Means for extinguishing or suppressing arc
    • H01H2085/386—Means for extinguishing or suppressing arc with magnetic or electrodynamic arc-blowing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Fuses (AREA)
BE610603A 1960-11-25 1961-11-22 Procédé de fabrication d'un monocristal de silicium, exempt de dislocations, par la méthode de la fusion par zone sans creuset BE610603A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES71415A DE1128413B (de) 1960-11-25 1960-11-25 Verfahren zur Herstellung von zersetzungsfreiem einkristallinem Silicium durch tiegelfreies Zonenschmelzen

Publications (1)

Publication Number Publication Date
BE610603A true BE610603A (fr) 1962-05-22

Family

ID=7502452

Family Applications (1)

Application Number Title Priority Date Filing Date
BE610603A BE610603A (fr) 1960-11-25 1961-11-22 Procédé de fabrication d'un monocristal de silicium, exempt de dislocations, par la méthode de la fusion par zone sans creuset

Country Status (7)

Country Link
US (1) US3175891A (pm)
BE (1) BE610603A (pm)
CH (1) CH395554A (pm)
DE (1) DE1128413B (pm)
GB (2) GB926487A (pm)
NL (2) NL266876A (pm)
SE (1) SE306303B (pm)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6411697A (pm) * 1963-10-15 1965-04-20
DE1224273B (de) * 1964-06-23 1966-09-08 Siemens Ag Vorrichtung zum tiegelfreien Zonenschmelzen
BE789637A (fr) * 1972-10-03 1973-04-03 Elphiac Sa Procede de fabrication de monocristaux et installation pour executer ceprocede.
DE2356376A1 (de) * 1973-11-12 1975-05-15 Siemens Ag Verfahren zum herstellen von homogen dotierten siliciumeinkristallen mit n-leitfaehigkeit durch neutronenbestrahlung

Also Published As

Publication number Publication date
US3175891A (en) 1965-03-30
SE306303B (pm) 1968-11-25
CH395554A (de) 1965-07-15
GB926487A (en) 1963-05-22
DE1128413B (de) 1962-04-26
GB926497A (en) 1963-05-22
NL266876A (pm)
NL139006B (nl) 1973-06-15

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