FR2344128A1 - Procede ameliore de fabrication de dispositif semi-conducteur par la fusion de zone par gradient de temperature - Google Patents
Procede ameliore de fabrication de dispositif semi-conducteur par la fusion de zone par gradient de temperatureInfo
- Publication number
- FR2344128A1 FR2344128A1 FR7706710A FR7706710A FR2344128A1 FR 2344128 A1 FR2344128 A1 FR 2344128A1 FR 7706710 A FR7706710 A FR 7706710A FR 7706710 A FR7706710 A FR 7706710A FR 2344128 A1 FR2344128 A1 FR 2344128A1
- Authority
- FR
- France
- Prior art keywords
- merging
- zone
- manufacturing
- semiconductor device
- temperature gradient
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/06—Single-crystal growth by zone-melting; Refining by zone-melting the molten zone not extending over the whole cross-section
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/02—Zone-melting with a solvent, e.g. travelling solvent process
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
- C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Element Separation (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/665,276 US4040868A (en) | 1976-03-09 | 1976-03-09 | Semiconductor device manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2344128A1 true FR2344128A1 (fr) | 1977-10-07 |
Family
ID=24669450
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7706710A Withdrawn FR2344128A1 (fr) | 1976-03-09 | 1977-03-08 | Procede ameliore de fabrication de dispositif semi-conducteur par la fusion de zone par gradient de temperature |
Country Status (6)
Country | Link |
---|---|
US (2) | US4040868A (fr) |
JP (1) | JPS52122469A (fr) |
DE (1) | DE2709628A1 (fr) |
FR (1) | FR2344128A1 (fr) |
GB (1) | GB1572045A (fr) |
NL (1) | NL7702507A (fr) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4040868A (en) * | 1976-03-09 | 1977-08-09 | General Electric Company | Semiconductor device manufacture |
US5316795A (en) * | 1990-05-24 | 1994-05-31 | Houston Advanced Research Center | Halogen-assisted chemical vapor deposition of diamond |
US5071677A (en) * | 1990-05-24 | 1991-12-10 | Houston Advanced Research Center | Halogen-assisted chemical vapor deposition of diamond |
JP3154198B2 (ja) * | 1992-08-25 | 2001-04-09 | ソニー株式会社 | 半導体レーザとその製法 |
JP2001253792A (ja) * | 2000-03-09 | 2001-09-18 | Ngk Insulators Ltd | 酸化物単結晶の板状体の製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3904442A (en) * | 1973-10-30 | 1975-09-09 | Gen Electric | Method of making isolation grids in bodies of semiconductor material |
US3899362A (en) * | 1973-10-30 | 1975-08-12 | Gen Electric | Thermomigration of metal-rich liquid wires through semiconductor materials |
US3897277A (en) * | 1973-10-30 | 1975-07-29 | Gen Electric | High aspect ratio P-N junctions by the thermal gradient zone melting technique |
DE2450895A1 (de) * | 1973-12-14 | 1975-06-26 | Gen Electric | Tiefe fingerartige dioden |
US3988766A (en) * | 1974-04-29 | 1976-10-26 | General Electric Company | Multiple P-N junction formation with an alloy droplet |
US4040868A (en) * | 1976-03-09 | 1977-08-09 | General Electric Company | Semiconductor device manufacture |
-
1976
- 1976-03-09 US US05/665,276 patent/US4040868A/en not_active Expired - Lifetime
-
1977
- 1977-02-25 GB GB8182/77A patent/GB1572045A/en not_active Expired
- 1977-03-05 DE DE19772709628 patent/DE2709628A1/de not_active Withdrawn
- 1977-03-08 FR FR7706710A patent/FR2344128A1/fr not_active Withdrawn
- 1977-03-08 NL NL7702507A patent/NL7702507A/xx unknown
- 1977-03-09 JP JP2494277A patent/JPS52122469A/ja active Granted
- 1977-03-31 US US05/783,167 patent/US4108685A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
NL7702507A (nl) | 1977-09-13 |
GB1572045A (en) | 1980-07-23 |
US4040868A (en) | 1977-08-09 |
JPS52122469A (en) | 1977-10-14 |
US4108685A (en) | 1978-08-22 |
DE2709628A1 (de) | 1977-09-15 |
JPS5548447B2 (fr) | 1980-12-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |