DK116200B - Fremgangsmåde til dyrkning af stavformige, forsætningsfri énkrystaller, navnlig af silicium, ved digelfri zonesmeltning. - Google Patents

Fremgangsmåde til dyrkning af stavformige, forsætningsfri énkrystaller, navnlig af silicium, ved digelfri zonesmeltning.

Info

Publication number
DK116200B
DK116200B DK599067AA DK599067A DK116200B DK 116200 B DK116200 B DK 116200B DK 599067A A DK599067A A DK 599067AA DK 599067 A DK599067 A DK 599067A DK 116200 B DK116200 B DK 116200B
Authority
DK
Denmark
Prior art keywords
crucible
shaped
single crystals
free zone
zone melting
Prior art date
Application number
DK599067AA
Other languages
English (en)
Inventor
C Vogel
H Longo
W Keller
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of DK116200B publication Critical patent/DK116200B/da

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/34—Single-crystal growth by zone-melting; Refining by zone-melting characterised by the seed, e.g. by its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DK599067AA 1967-03-09 1967-11-30 Fremgangsmåde til dyrkning af stavformige, forsætningsfri énkrystaller, navnlig af silicium, ved digelfri zonesmeltning. DK116200B (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1967S0108715 DE1619994B2 (de) 1967-03-09 1967-03-09 Verfahren zum zuechten eines stabfoermigen, versetzungsfreien einkristalls aus silicium durch tiegelfreies zonenschmelzen

Publications (1)

Publication Number Publication Date
DK116200B true DK116200B (da) 1969-12-22

Family

ID=7528987

Family Applications (1)

Application Number Title Priority Date Filing Date
DK599067AA DK116200B (da) 1967-03-09 1967-11-30 Fremgangsmåde til dyrkning af stavformige, forsætningsfri énkrystaller, navnlig af silicium, ved digelfri zonesmeltning.

Country Status (7)

Country Link
US (1) US3655345A (da)
JP (1) JPS4817401B1 (da)
DE (1) DE1619994B2 (da)
DK (1) DK116200B (da)
FR (1) FR1568164A (da)
GB (1) GB1181486A (da)
NL (1) NL6801348A (da)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2827050C2 (de) * 1978-06-20 1986-09-11 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von [111]-orientierten Siliciumeinkristallstäben mit möglichst geraden Manteloberflächen durch tiegelfreies Zonenschmelzen
JP3223873B2 (ja) * 1997-12-24 2001-10-29 住友金属工業株式会社 シリコンウエーハ及びその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2651831A (en) * 1950-07-24 1953-09-15 Bell Telephone Labor Inc Semiconductor translating device
GB848382A (en) * 1957-11-28 1960-09-14 Siemens Ag Improvements in or relating to the production of mono-crystalline bodies
US2988433A (en) * 1957-12-31 1961-06-13 Ibm Method of forming crystals
NL243511A (da) * 1959-09-18
NL6411697A (da) * 1963-10-15 1965-04-20

Also Published As

Publication number Publication date
GB1181486A (en) 1970-02-18
US3655345A (en) 1972-04-11
FR1568164A (da) 1969-05-23
NL6801348A (da) 1968-09-10
DE1619994A1 (de) 1970-03-26
JPS4817401B1 (da) 1973-05-29
DE1619994B2 (de) 1976-07-15

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Legal Events

Date Code Title Description
PBP Patent lapsed