BE438184A - - Google Patents
Info
- Publication number
- BE438184A BE438184A BE438184DA BE438184A BE 438184 A BE438184 A BE 438184A BE 438184D A BE438184D A BE 438184DA BE 438184 A BE438184 A BE 438184A
- Authority
- BE
- Belgium
- Prior art keywords
- layer
- emi
- gallium
- semiconductor
- vapors
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- 238000009833 condensation Methods 0.000 claims description 5
- 230000005494 condensation Effects 0.000 claims description 5
- 229910052716 thallium Inorganic materials 0.000 claims description 5
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 229910052797 bismuth Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- 229910052793 cadmium Inorganic materials 0.000 description 3
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
- H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
- H10D48/047—Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to foundation plates
Landscapes
- Thermistors And Varistors (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DEA11861D DE966967C (de) | 1939-03-02 | 1939-03-02 | Elektrisch unsymmetrisch leitendes System, insbesondere Trockengleichrichter |
Publications (1)
Publication Number | Publication Date |
---|---|
BE438184A true BE438184A (enrdf_load_stackoverflow) | 1940-04-30 |
Family
ID=6922366
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE438184D BE438184A (enrdf_load_stackoverflow) | 1939-03-02 | 1940-03-02 |
Country Status (4)
Country | Link |
---|---|
BE (1) | BE438184A (enrdf_load_stackoverflow) |
DE (1) | DE966967C (enrdf_load_stackoverflow) |
FR (1) | FR886563A (enrdf_load_stackoverflow) |
NL (1) | NL57629C (enrdf_load_stackoverflow) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE973864C (de) * | 1950-02-12 | 1960-06-30 | Standard Elek K Lorenz Ag | Selen-Sperrschicht-Gleichrichter |
DE973817C (de) * | 1951-03-05 | 1960-06-15 | Licentia Gmbh | Verfahren zur Herstellung eines Trockengleichrichters |
BE516364A (enrdf_load_stackoverflow) * | 1951-12-20 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AT131780B (de) * | 1930-08-07 | 1933-02-10 | Erwin Falkenthal | Lichtelektrische Zelle und Verfahren zur Herstellung derselben. |
DE667750C (de) * | 1932-04-16 | 1938-11-19 | Siemens & Halske Akt Ges | Verfahren zur Herstellung unipolarer Sperrschichten |
-
1939
- 1939-03-02 DE DEA11861D patent/DE966967C/de not_active Expired
-
1940
- 1940-03-02 BE BE438184D patent/BE438184A/fr unknown
- 1940-03-02 NL NL97133A patent/NL57629C/xx active
-
1942
- 1942-10-05 FR FR886563D patent/FR886563A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR886563A (fr) | 1943-10-19 |
DE966967C (de) | 1957-09-19 |
NL57629C (enrdf_load_stackoverflow) | 1946-05-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2673199B1 (fr) | Revetement de surface anti-grippage pour moyen d'assemblage de tubes par filetages et procede de realisation d'un tel revetement. | |
KR100924192B1 (ko) | 반도체 소자용 전도성 박막, 반도체 소자 및 그 제조 방법 | |
EP0352152B1 (fr) | Procédé de fabrication d'un scintillateur et scintillateur ainsi obtenu | |
FR2843488A1 (fr) | Dispositif de commutation pour un capteur a rayons x | |
DE2711365A1 (de) | Halbleiteranordnung mit schottky- grenzschicht | |
US2957112A (en) | Treatment of tantalum semiconductor electrodes | |
US4349395A (en) | Method for producing MOS semiconductor device | |
BE438184A (enrdf_load_stackoverflow) | ||
DE3023165C2 (enrdf_load_stackoverflow) | ||
EP0165863A1 (fr) | Procédé de fabrication d'au moins un transistor à effet de champ, en couche mince, et transistor obtenu par ce procédé | |
DE4122595A1 (de) | Verfahren zum herstellen eines selbstjustierenden ccd-sensors | |
KR910020924A (ko) | 정전용량소자를 함유한 반도체장치 및 그 제조방법 | |
JPS57170550A (en) | Manufacture of semiconductor device | |
EP0054998A1 (fr) | Procédé de fabrication de transistors à effet de champ à grille auto-alignée et transistors ainsi obtenus | |
DE1816748A1 (de) | Halbleitervorrichtung und Verfahren zu ihrer Herstellung | |
JPS6227755B2 (enrdf_load_stackoverflow) | ||
Kraft et al. | Poole-Frenkel ionization of excitons in solid Kr | |
DE2207012C2 (de) | Verfahren zur Kontaktierung von Halbleiterbauelementen | |
US5237447A (en) | Alkali metal for ultraviolet band-pass filter | |
Karlsson et al. | Localized states in AuPd and AgPd alloys | |
DE2951482C2 (de) | Verfahren zum Herstellen einer Dippelschicht mit Hetero-Übergang für die Speicherelektrode einer Bildaufnahmevorrichtung | |
DE1287400C2 (de) | Verfahren zum vakuumaufdampfen einer metallschicht, insbesondere aus gold | |
Jacob et al. | A new method for determining the electronic mean free path in polycrystalline metals | |
KR940008226B1 (ko) | 박막 트랜지스터의 제조방법 | |
JP2681101B2 (ja) | 半導体受光素子 |