AU6523380A - Semi-conductor laser - Google Patents

Semi-conductor laser

Info

Publication number
AU6523380A
AU6523380A AU65233/80A AU6523380A AU6523380A AU 6523380 A AU6523380 A AU 6523380A AU 65233/80 A AU65233/80 A AU 65233/80A AU 6523380 A AU6523380 A AU 6523380A AU 6523380 A AU6523380 A AU 6523380A
Authority
AU
Australia
Prior art keywords
zones
conductivity type
semiconductor laser
active region
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU65233/80A
Other languages
English (en)
Inventor
Peter Jan De Waard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of AU6523380A publication Critical patent/AU6523380A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
AU65233/80A 1979-12-13 1980-12-10 Semi-conductor laser Abandoned AU6523380A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL7908969 1979-12-13
NL7908969A NL7908969A (nl) 1979-12-13 1979-12-13 Halfgeleiderlaser.

Publications (1)

Publication Number Publication Date
AU6523380A true AU6523380A (en) 1981-06-18

Family

ID=19834312

Family Applications (1)

Application Number Title Priority Date Filing Date
AU65233/80A Abandoned AU6523380A (en) 1979-12-13 1980-12-10 Semi-conductor laser

Country Status (9)

Country Link
US (1) US4375686A (enExample)
JP (1) JPS5932910B2 (enExample)
AU (1) AU6523380A (enExample)
DE (1) DE3046238A1 (enExample)
ES (1) ES8201774A1 (enExample)
FR (1) FR2471683A1 (enExample)
GB (1) GB2065961B (enExample)
IT (1) IT1134661B (enExample)
NL (1) NL7908969A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4400813A (en) * 1981-07-20 1983-08-23 Bell Telephone Laboratories, Incorporated Crenelated-ridge waveguide laser
US4534033A (en) * 1981-08-25 1985-08-06 Handotal Kenkyu Shinkokai Three terminal semiconductor laser
JPS5967677A (ja) * 1982-07-01 1984-04-17 Semiconductor Res Found 光集積回路
DE3923354A1 (de) * 1989-07-14 1991-01-24 Licentia Gmbh Halbleiterlaser
JPH0719800Y2 (ja) * 1991-01-30 1995-05-10 ローム株式会社 Ｌｅｄアレイ
JP2015138905A (ja) * 2014-01-23 2015-07-30 三菱電機株式会社 分布帰還型半導体レーザ素子、分布帰還型半導体レーザ素子の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1439316C3 (de) 1963-12-13 1975-07-31 Siemens Ag, 1000 Berlin Und 8000 Muenchen Anordnung zur Erzeugung und/oder Verstärkung elektromagnetischer Strahlung
JPS5074388A (enExample) * 1973-11-01 1975-06-19
JPS52109884A (en) * 1976-03-11 1977-09-14 Nec Corp Stripe type hetero junction semoonductor laser
NL7607299A (nl) * 1976-07-02 1978-01-04 Philips Nv Injektielaser.
NL7900668A (nl) * 1978-11-08 1980-05-12 Philips Nv Inrichting voor het opwekken of versterken van coheren- te electromagnetische straling, en werkwijze voor het vervaardigen van de inrichting.

Also Published As

Publication number Publication date
DE3046238A1 (de) 1981-08-27
JPS5694683A (en) 1981-07-31
IT8026552A0 (it) 1980-12-10
ES497606A0 (es) 1981-12-16
GB2065961A (en) 1981-07-01
IT1134661B (it) 1986-08-13
FR2471683B1 (enExample) 1982-06-18
NL7908969A (nl) 1981-07-16
US4375686A (en) 1983-03-01
JPS5932910B2 (ja) 1984-08-11
DE3046238C2 (enExample) 1988-01-14
FR2471683A1 (fr) 1981-06-19
ES8201774A1 (es) 1981-12-16
GB2065961B (en) 1983-07-06

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