AU539850B2 - Process for the manufacture of polycrustalline garnet and corresponding monocrystal - Google Patents

Process for the manufacture of polycrustalline garnet and corresponding monocrystal

Info

Publication number
AU539850B2
AU539850B2 AU64163/80A AU6416380A AU539850B2 AU 539850 B2 AU539850 B2 AU 539850B2 AU 64163/80 A AU64163/80 A AU 64163/80A AU 6416380 A AU6416380 A AU 6416380A AU 539850 B2 AU539850 B2 AU 539850B2
Authority
AU
Australia
Prior art keywords
garnet
hydroxide
oxides
polycrystalline
process according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
AU64163/80A
Other languages
English (en)
Other versions
AU6416380A (en
Inventor
Bernard Boudot
Georges Nury
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rhone Poulenc Industries SA
Original Assignee
Rhone Poulenc Industries SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rhone Poulenc Industries SA filed Critical Rhone Poulenc Industries SA
Publication of AU6416380A publication Critical patent/AU6416380A/en
Application granted granted Critical
Publication of AU539850B2 publication Critical patent/AU539850B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00—Compounds of gallium, indium or thallium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B13/00—Oxygen; Ozone; Oxides or hydroxides in general
    • C01B13/14—Methods for preparing oxides or hydroxides in general
    • C01B13/36—Methods for preparing oxides or hydroxides in general by precipitation reactions in aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00—Compounds of rare earth metals
    • C01F17/30—Compounds containing rare earth metals and at least one element other than a rare earth metal, oxygen or hydrogen, e.g. La4S3Br6
    • C01F17/32—Compounds containing rare earth metals and at least one element other than a rare earth metal, oxygen or hydrogen, e.g. La4S3Br6 oxide or hydroxide being the only anion, e.g. NaCeO2 or MgxCayEuO
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/03—Particle morphology depicted by an image obtained by SEM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/50—Agglomerated particles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Geology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Saccharide Compounds (AREA)
  • Soft Magnetic Materials (AREA)
  • Hall/Mr Elements (AREA)
  • Image Processing (AREA)
  • Thin Magnetic Films (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
AU64163/80A 1979-11-09 1980-11-07 Process for the manufacture of polycrustalline garnet and corresponding monocrystal Ceased AU539850B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR7927657 1979-11-09
FR7927657A FR2469477A1 (fr) 1979-11-09 1979-11-09 Procede de fabrication de grenat polycristallin, grenat polycristallin et monocristal correspondant

Publications (2)

Publication Number Publication Date
AU6416380A AU6416380A (en) 1981-05-14
AU539850B2 true AU539850B2 (en) 1984-10-18

Family

ID=9231483

Family Applications (1)

Application Number Title Priority Date Filing Date
AU64163/80A Ceased AU539850B2 (en) 1979-11-09 1980-11-07 Process for the manufacture of polycrustalline garnet and corresponding monocrystal

Country Status (10)

Country Link
US (1) US4350559A (show.php)
EP (1) EP0030170B1 (show.php)
JP (1) JPS6018608B2 (show.php)
AT (1) ATE3528T1 (show.php)
AU (1) AU539850B2 (show.php)
CA (1) CA1147943A (show.php)
DE (1) DE3063536D1 (show.php)
FI (1) FI67098C (show.php)
FR (1) FR2469477A1 (show.php)
NO (1) NO157613C (show.php)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1207998A (en) * 1982-11-23 1986-07-22 Union Carbide Corporation Process for making laser host garnet crystal material free of water and hydroxyl ion impurities
FR2572844B1 (fr) * 1984-11-02 1986-12-26 Commissariat Energie Atomique Materiau magnetique du type grenat, film magnetique a forte rotation faraday comportant un tel materiau et son procede de fabrication
US5021302A (en) * 1986-08-15 1991-06-04 At&T Bell Laboratories Bismuth-iron garnets with large growth-induced magnetic anisotropy
JPS63295404A (ja) * 1987-05-26 1988-12-01 Hidetoshi Ishida オゾン発生器の電極体構造
JPH0193404A (ja) * 1987-10-01 1989-04-12 Natl Inst For Res In Inorg Mater ガーネット構造を持つ化合物の原料粉末の製造方法
NL8800155A (nl) * 1988-01-25 1989-08-16 Philips Nv Granaat en werkwijzen voor het bereiden van een granaat.
KR920010085B1 (ko) * 1988-07-30 1992-11-14 소니 가부시기가이샤 이트륨 · 알루미늄 · 가넷미립자의 제조방법
US5302559A (en) * 1989-02-17 1994-04-12 U.S. Philips Corporation Mixed crystals of doped rare earth gallium garnet
CA2042263A1 (en) * 1990-06-29 1991-12-30 Charles D. Greskovich Transparent polycrystalline garnets
FR2667589A1 (fr) * 1990-10-05 1992-04-10 Rhone Poulenc Chimie Composition pour ceramique, procedes d'obtention et corps en ceramique obtenu.
FR2670770B1 (fr) * 1990-12-20 1993-05-14 Bellon Labor Sa Roger Procede de preparation d'un oxyde d'au moins deux metaux differents.
JP3738454B2 (ja) * 1993-08-11 2006-01-25 住友化学株式会社 複合金属酸化物粉末およびその製造方法
DE10223988A1 (de) * 2002-05-29 2003-12-18 Siemens Ag Leuchtstoffpulver, Verfahren zum Herstellen des Leuchtstoffpulvers und Leuchtstoffkörper mit dem Leuchtstoffpulver
US9552917B2 (en) * 2013-09-20 2017-01-24 Skyworks Solutions, Inc. Materials, devices and methods related to below-resonance radio-frequency circulators and isolators
US10197685B2 (en) * 2015-12-01 2019-02-05 Siemens Medical Solutions Usa, Inc. Method for controlling gallium content in gadolinium-gallium garnet scintillators
US10961452B2 (en) 2015-12-01 2021-03-30 Siemens Medical Solutions Usa, Inc. Method for controlling gallium content in gadolinium-gallium garnet scintillators
WO2025078488A1 (fr) 2023-10-10 2025-04-17 Centre National De La Recherche Scientifique Procede de fabrication d'un tellurate

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE635034A (show.php) * 1962-08-10
US3563897A (en) * 1968-04-03 1971-02-16 Trans Tech Inc Ferromagnetic garnet with stress insensitive b-h loop and method of making same
FR1577952A (show.php) * 1968-04-04 1969-08-14
US3562175A (en) * 1968-09-11 1971-02-09 Gen Electric Gadolinium oxide particle growth in lithium oxide flux
US3591516A (en) * 1968-10-23 1971-07-06 Gen Electric Fused salt process for producing rare earth oxyhalide and oxide luminescent materials
US3596440A (en) * 1969-05-14 1971-08-03 Air Inc Van Gas scrubber
US3681010A (en) * 1970-09-14 1972-08-01 Us Army Preparation of ultrafine mixed metallic-oxide powders
US3681011A (en) * 1971-01-19 1972-08-01 Us Army Cryo-coprecipitation method for production of ultrafine mixed metallic-oxide particles
US3751366A (en) * 1971-06-04 1973-08-07 Us Army Process for preparing ferrite and garnet raw materials for microwave applications
US3723599A (en) * 1971-08-18 1973-03-27 Bell Telephone Labor Inc Technique for growth of single crystal gallium garnet
US3838053A (en) * 1972-11-27 1974-09-24 Sperry Rand Corp Method of growing rare earth garnet material
JPS512320B2 (show.php) * 1973-07-17 1976-01-24
US4115134A (en) * 1977-07-11 1978-09-19 Gte Laboratories Incorporated Transparent yttria ceramics and method for producing same

Also Published As

Publication number Publication date
AU6416380A (en) 1981-05-14
JPS6018608B2 (ja) 1985-05-11
CA1147943A (fr) 1983-06-14
FR2469477A1 (fr) 1981-05-22
FI67098B (fi) 1984-09-28
FI803477L (fi) 1981-05-10
NO803361L (no) 1981-05-11
US4350559A (en) 1982-09-21
NO157613B (no) 1988-01-11
FR2469477B1 (show.php) 1985-02-08
EP0030170A1 (fr) 1981-06-10
ATE3528T1 (de) 1983-06-15
EP0030170B1 (fr) 1983-05-25
FI67098C (fi) 1985-01-10
DE3063536D1 (en) 1983-07-07
NO157613C (no) 1988-04-20
JPS5696727A (en) 1981-08-05

Similar Documents

Publication Publication Date Title
FR2469477B1 (show.php)
EP0285358A3 (en) Process for producing compound semiconductor and semiconductor device using compound semiconductor obtained by same
JPS51123561A (en) Production method of semicondvctor device
AU534871B2 (en) Polycrystalline garnet
JPS54163672A (en) Method of growing semiconductor compound monocrystal
IT964946B (it) Procedimento per l accrescimento dei granati monocristallini di gal lio
JPS5562887A (en) Production of hexagonal system barium magnesium aluminate (bamga 10o17) single crystal
GB2045639B (en) Process for the production of epitaxial layers of semiconductor material on monocrystalline substrates
JPS5435899A (en) Production of rare earth element gallium garnet single crystal
JPS5617909A (en) Manufacture of selenonickel ferrite (nife2se4) by applying high pressure and high temperature
DE2334811C2 (de) Verfahren zur Herstellung von CdCr tief 2 Se tief 4 Einkristallen
JPS51136582A (en) Process for production of a semi conductor crystal
JPS5252570A (en) Device for production of compound semiconductor
JPS5296864A (en) Method of transforming slice of polycrystal semiconductor into slice of huge crystal semiconductor
KR880011836A (ko) 망간-아연 페라이트 단결정 제조방법
JPS5228258A (en) Method for growth of crystals from liquid phase
JPS5722199A (en) Method for growing single crystal
JPS52155188A (en) Liquid phase growth of semiconductor crystal
JPS5617908A (en) Manufacture of telluronickel ferrite (nife2te4) by applying high pressure and high temperature
GB2064977B (en) Method of manufacturing semiconductor structures by liquid phase epitaxy
JPS5675463A (en) Liquid crystal substance
JPS5365998A (en) Manufacturing process of tantalate piezoelectric crystal
JPS5387985A (en) Gaseous phase epitaxial growth method for compound semiconductor crystal
JPS556858A (en) Ferromagnetic, metallic thin wire and its preparation
JPS5268155A (en) Preparation of 4'-alkyl-4-biphenylcarbonitrile