AU467587B2 - A method of and apparatus for depositing aluminium onthe surface ofa semiconductor wafer - Google Patents

A method of and apparatus for depositing aluminium onthe surface ofa semiconductor wafer

Info

Publication number
AU467587B2
AU467587B2 AU56844/73A AU5684473A AU467587B2 AU 467587 B2 AU467587 B2 AU 467587B2 AU 56844/73 A AU56844/73 A AU 56844/73A AU 5684473 A AU5684473 A AU 5684473A AU 467587 B2 AU467587 B2 AU 467587B2
Authority
AU
Australia
Prior art keywords
semiconductor wafer
surface ofa
onthe surface
depositing aluminium
ofa semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
AU56844/73A
Other languages
English (en)
Other versions
AU5684473A (en
Inventor
MOORE and CYRUS HUGHES ROBERT
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lucas Electrical Co Ltd
Original Assignee
Lucas Electrical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucas Electrical Co Ltd filed Critical Lucas Electrical Co Ltd
Publication of AU5684473A publication Critical patent/AU5684473A/en
Application granted granted Critical
Publication of AU467587B2 publication Critical patent/AU467587B2/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • H10P95/00—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
AU56844/73A 1972-06-21 1973-06-12 A method of and apparatus for depositing aluminium onthe surface ofa semiconductor wafer Expired AU467587B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB2900272A GB1436999A (en) 1972-06-21 1972-06-21 Method of depositing aluminium on the surface of a semi- conductor wafer
GBGB29002 1972-06-21

Publications (2)

Publication Number Publication Date
AU5684473A AU5684473A (en) 1974-12-12
AU467587B2 true AU467587B2 (en) 1975-12-04

Family

ID=10284692

Family Applications (1)

Application Number Title Priority Date Filing Date
AU56844/73A Expired AU467587B2 (en) 1972-06-21 1973-06-12 A method of and apparatus for depositing aluminium onthe surface ofa semiconductor wafer

Country Status (5)

Country Link
JP (1) JPS4958754A (Direct)
AU (1) AU467587B2 (Direct)
DE (1) DE2331717A1 (Direct)
GB (1) GB1436999A (Direct)
NL (1) NL7308687A (Direct)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5948952B2 (ja) * 1981-03-23 1984-11-29 富士通株式会社 金属薄膜の形成方法
JPS59168635A (ja) * 1983-03-15 1984-09-22 Fuji Electric Corp Res & Dev Ltd 半導体装置
DE4215664C1 (de) * 1992-05-13 1993-11-25 Mtu Muenchen Gmbh Verfahren zum Aufbringen von metallischen Zwischenschichten und seine Anwendung

Also Published As

Publication number Publication date
AU5684473A (en) 1974-12-12
NL7308687A (Direct) 1973-12-27
JPS4958754A (Direct) 1974-06-07
DE2331717A1 (de) 1974-01-10
GB1436999A (en) 1976-05-26

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