AU4134401A - Method for rapid thermal processing of substrates - Google Patents

Method for rapid thermal processing of substrates

Info

Publication number
AU4134401A
AU4134401A AU41344/01A AU4134401A AU4134401A AU 4134401 A AU4134401 A AU 4134401A AU 41344/01 A AU41344/01 A AU 41344/01A AU 4134401 A AU4134401 A AU 4134401A AU 4134401 A AU4134401 A AU 4134401A
Authority
AU
Australia
Prior art keywords
substrates
rapid thermal
thermal processing
rapid
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU41344/01A
Other languages
English (en)
Inventor
Lynn David Bollinger
Iskander Tokmouline
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jetek Inc
Original Assignee
Jetek Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/689,307 external-priority patent/US6467297B1/en
Application filed by Jetek Inc filed Critical Jetek Inc
Publication of AU4134401A publication Critical patent/AU4134401A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
AU41344/01A 1999-11-01 2000-10-23 Method for rapid thermal processing of substrates Abandoned AU4134401A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US16276299P 1999-11-01 1999-11-01
US60162762 1999-11-01
US09/689,307 US6467297B1 (en) 2000-10-12 2000-10-12 Wafer holder for rotating and translating wafers
US09689307 2000-10-12
PCT/US2000/041492 WO2001035041A2 (fr) 1999-11-01 2000-10-23 Procede pour le traitement thermique rapide de substrats

Publications (1)

Publication Number Publication Date
AU4134401A true AU4134401A (en) 2001-06-06

Family

ID=26859041

Family Applications (1)

Application Number Title Priority Date Filing Date
AU41344/01A Abandoned AU4134401A (en) 1999-11-01 2000-10-23 Method for rapid thermal processing of substrates

Country Status (4)

Country Link
EP (1) EP1234328A2 (fr)
JP (1) JP2003514377A (fr)
AU (1) AU4134401A (fr)
WO (1) WO2001035041A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3501768B2 (ja) * 2001-04-18 2004-03-02 株式会社ガソニックス 基板熱処理装置およびフラットパネルデバイスの製造方法
JP5105620B2 (ja) * 2008-12-05 2012-12-26 株式会社フィルテック 膜形成方法および膜形成装置
JP5403247B2 (ja) * 2009-09-07 2014-01-29 村田機械株式会社 基板移載装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60138973A (ja) * 1983-12-27 1985-07-23 Fuji Electric Corp Res & Dev Ltd 絶縁ゲ−ト型電界効果トランジスタの製造方法
JPS61170025A (ja) * 1985-01-23 1986-07-31 Nec Corp 拡散層の形成方法
JPS62290120A (ja) * 1986-06-09 1987-12-17 Ricoh Co Ltd 多結晶半導体膜の単結晶化方法
JPS63172424A (ja) * 1987-01-12 1988-07-16 Fujitsu Ltd 半導体装置の製造方法
JPH01242141A (ja) * 1988-03-23 1989-09-27 Hitachi Ltd 高気圧マイクロ波プラズマ反応装置
JPH0448723A (ja) * 1990-06-15 1992-02-18 Fuji Xerox Co Ltd 半導体装置の製造方法
US5122043A (en) * 1990-12-06 1992-06-16 Matthews M Dean Electric pulsed power vacuum press
JPH05226260A (ja) * 1992-02-13 1993-09-03 Matsushita Electric Ind Co Ltd 光電変換素子の製造方法およびその製造装置
US5336641A (en) * 1992-03-17 1994-08-09 Aktis Corporation Rapid thermal annealing using thermally conductive overcoat
US5663090A (en) * 1995-06-29 1997-09-02 Micron Technology, Inc. Method to thermally form hemispherical grain (HSG) silicon to enhance capacitance for application in high density DRAMs
US6051483A (en) * 1996-11-12 2000-04-18 International Business Machines Corporation Formation of ultra-shallow semiconductor junction using microwave annealing
KR20000016138A (ko) * 1996-05-31 2000-03-25 피터 무몰라 플라즈마 제트 발생 및 편향 장치
US5843239A (en) * 1997-03-03 1998-12-01 Applied Materials, Inc. Two-step process for cleaning a substrate processing chamber
US6165273A (en) * 1997-10-21 2000-12-26 Fsi International Inc. Equipment for UV wafer heating and photochemistry
JP2001522141A (ja) * 1997-11-03 2001-11-13 エーエスエム アメリカ インコーポレイテッド 低質量サポートを用いたウェハの加工方法

Also Published As

Publication number Publication date
EP1234328A2 (fr) 2002-08-28
JP2003514377A (ja) 2003-04-15
WO2001035041A3 (fr) 2002-01-24
WO2001035041A9 (fr) 2002-08-08
WO2001035041A2 (fr) 2001-05-17

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase